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| PTB20111 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PTB20111 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. PACKAGE STYLE .400 2L FLG FEATURES: * 25 W, 860-900 MHz * Silicon Nitride Passivated * OmnigoldTM Metalization System MAXIMUM RATINGS IC VCBO PDISS TJ TSTG JC 20 A 65 V 159 W @ TC = 25 C -40 C to +150 C -40 C to +150 C 1.1 C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO hFE PG C TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IE = 5.0 mA VCE = 5.0 V VCC = 25 V ICQ = 200 mA VCC = 25 V ICQ = 200 mA IC = 1.0 A POUT = 85 W POUT = 60 W f = 900 MHz f = 900 MHz MINIMUM TYPICAL MAXIMUM 25 55 3.5 20 8.5 50 9.5 10:1 100 UNITS V V V --dB % --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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