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MG300Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG300Q2YS60A(1200V/300A 2in1)
High Power Switching Applications Motor Control Applications
* * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance VCE (sat) = 2.4 V (typ.)
Equivalent Circuit
1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open
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2002-09-06
MG300Q2YS60A
Package Dimensions: 2-123C1B
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
Signal Terminal Layout
7 5
8 2.54 25.4 0.6 6
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
3 1
4 2.54 2
2.54
Weight: 375 g
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MG300Q2YS60A
Maximum Ratings (Ta = 25C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol 3/4 Rating 1200 20 300 A 600 300 A 600 2800 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V Nm Unit V V
Electrical Characteristics (Tj = 25C)
1. Inverter Stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 300 A VCC = 600 V, IC = 300 A VGE = 15 V, RG = 6.8 W (Note 1) Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 1200 V, VGE = 0 VCE = 5 V, IC = 300 mA VGE = 15 V, IC = 300 A Tj = 25C Tj = 125C Min 3/4 3/4 3/4 6.0 3/4 3/4 3/4 0.10 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 7.0 2.4 3/4 21000 3/4 3/4 3/4 3/4 2.1 Max +3/-4 100 1.0 8.0 2.8 V 3.2 3/4 1.00 2.00 0.50 0.50 2.6 V ms pF Unit mA nA mA V
VCE = 10 V, VGE = 0, f = 1 MHz
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25C)
Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V 3/4 VCC = 600 V, VGE = 15 V Min 360 100 3/4 Typ. 3/4 3/4 3/4 Max 3/4 125 8 Unit A C ms
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MG300Q2YS60A
3. Module (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min 3/4 3/4 3/4 Typ. 3/4 3/4 0.013 Max 0.044 0.068 3/4 C/W Unit C/W
Switching Time Test Circuit
RG -VGE
IF
VCC IC RG L
Timing Chart
90% 10%
VGE
90% Irr Irr IC trr 20% Irr 90%
10% td (on) td (off)
10%
tf
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MG300Q2YS60A
Remark

l Short circuit capability is 6 ms after fault output signal. Please keep following condition to use fault output signal. * VCC < 750 V = < * 14.8 V = VGE < 17.0 V = > 6.8 W * RG = * Tj < 125C =

l To use this product, VGE must be provided higher than 14.8 V. In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions.
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MG300Q2YS60A
IC - VCE
600 Common emitter Tj = 25C 500 15 V 500 600 Common emitter Tj = 125C
IC - VCE
VGE = 20 V 15 V 12 V 400 10 V 300
(A)
IC
Collector current
300 10 V 200
Collector current
IC
400
(A)
200
VGE = 20 V
12 V
9V
100
9V 8V
100
8V
0 0
1
2
3
4
5
0 0
1
2
3
4
5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
VCE - VGE
12 Common emitter 12 Common emitter
VCE - VGE
(V)
Tj = 125C 10
(V)
Tj = 25C 10
VCE
8
VCE
8 6
Collector-emitter voltage
Collector-emitter voltage
6 IC = 600 A 4 300 A 2 150 A 0 0
4
IC = 600 A 300 A
2 150 A 0 0 5 10 15 20
5
10
15
20
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
VCE - VGE
12 Common emitter 600 Common emitter VCE = 5 V 500 Tj = -40C 10
IC - VGE
(V)
VCE
Collector-emitter voltage
6
Collector current
IC
8
(A)
400 300
4 300 A 2
IC = 600 A
200
25C Tj = 125C
100 150 A
-40C
0 0
5
10
15
20
0 0
4
8
12
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
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2002-09-06
MG300Q2YS60A
IF - VF
600 Common cathode 1000 VGE = 0 V 500
VCE, VGE - QG
20 Common emitter RL = 2 W Tj = 25C
(V)
VCE
800
16
(A)
Forward current IF
400
Collector-emitter voltage
600
400 V 600 V
12
300 125C 200 Tj = 25C -40C
400
200 V VCE = 0 V
8
100
200
4
0 0
1
2
3
4
5
0 0
500
1000
1500
2000
0 2500
Forward voltage
VF
(V)
Charge
QG
(nC)
SW time - RG
10000 1000 Common emitter toff VCC = 600 V IC = 300 A VGE = 15 V
Eon, Eoff - RG
(mJ)
Tj = 25C Tj = 125C
(ns)
1000
SW time
td (on) tr 100 Common emitter VCC = 600 V IC = 300 A 10 0 VGE = 15 V 5 10 Tj = 25C Tj = 125C 15 20 25 tf
SW loss Eon, Eoff
td (off)
ton
Eon 100
Eoff
10 0
5
10
15
20
25
Gate resistance RG
(9)
Gate resistance RG
(9)
SW time - IC
10000 100
Eon, Eoff - IC
toff td (off) ton
(ns)
1000
(mJ)
SW loss Eon, Eoff
Eoff Eon
SW time
10
tf 100 Common emitter tr VCC = 600 V RG = 6.8 W VGE = 15 V 50 100 150 200
td (on)
Common emitter VCC = 600 V RG = 6.8 W VGE = 15 V 1 0 Tj = 25C Tj = 125C 200 250 300
Tj = 25C Tj = 125C 250 300
10 0
50
100
150
Collector current
IC
(A)
Collector current
IC
(A)
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Gate-emitter voltage VGE
(V)
MG300Q2YS60A
Irr, trr - IF
1000 100
Edsw - IF
(mJ) Reverse recovery loss Edsw
Reverse recovery time trr (ns) Reverse recovery current Irr (A)
trr
10
100 Irr
1 Common cathode VCC = 600 V RG = 6.8 W VGE = 15 V 0.1 0 Tj = 25C Tj = 125C 200 250 300
Common cathode VCC = 600 V RG = 6.8 W VGE = 15 V 10 0 50 100 150 200 Tj = 25C Tj = 125C 250 300
50
100
150
Forward current
IF
(A)
Forward current
IF
(A)
C - VCE
100000 Cies 1000
Safe-operating area
IC max (pulsed)* IC max (continuous) 100 ms*
(pF)
IC
(A)
10000
50 ms* 100 *: Single nonrepetitive pulse Tc = 25C Curves must 10 be derated linearly with increase in temperature. 3 1 10
Capacitance C
Coes 1000 Common emitter VGE = 0 V f = 1 MHz Tj = 25C 100 0.01 0.1 1 10 100 Cres
Collector current
1 ms* DC operation
100
1000
10000
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
Reverse bias SOA
1000
Rth - tw
1
(A)
Tc = 25C 100
IC
(C/W)
Collector current
0.1
Diode stage
Rth (j-c)
10 Tj < 125C = RG = 6.8 W VGE = 15 V 1 0 400 800 1200
Transistor stage 0.01
0.001 0.001
0.01
0.1
1
10
Collector-emitter voltage
VCE
(V)
Pulse width
tw
(s)
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MG300Q2YS60A
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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2002-09-06

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