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PD - 94027A
HEXFET(R) POWER MOSFET THRU-HOLE (TO-257AA)
IRF5Y9540CM 100V, P-CHANNEL
Product Summary
Part Number
IRF5Y9540CM BVDSS
-100V
RDS(on) 0.117
ID -18A
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-257AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25C ID @ VGS = -10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -18 -11 -72 75 0.6 20 256 -11 7.5 4.4 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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11/17/00
IRF5Y9540CM
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units
-- -0.11 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.117 -4.0 -- -25 -250 -100 100 109 19 53 29 135 87 84 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -250A Reference to 25C, ID = -1.0mA VGS = 10V, ID = -11A VDS = VGS, ID = -250A VDS = -50V, IDS = -11A VDS = -100V ,VGS=0V VDS = -80V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-10V, ID = -11A VDS = -80V VDD = -50V, ID = -11A, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage -100 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 5.3 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = -25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1390 428 246
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -18 -72 -1.6 220 1200
Test Conditions
A
V ns nC Tj = 25C, IS = -11A, VGS = 0V Tj = 25C, IF = -11A, di/dt 100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 1.67
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRF5Y9540CM
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
100
10
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
-4.5V
1
1
-4.5V
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
TJ = 150 C
10
R DS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 25 C
2.5
ID = -18A
-I D , Drain-to-Source Current (A)
2.0
1.5
1.0
1
0.5
0.1 4 6 8
15
V DS = -25V 20s PULSE WIDTH 10 12 14
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF5Y9540CM
2500
2000
-VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = -11A
16
C, Capacitance (pF)
VDS =-80V VDS =-50V VDS =-20V
1500
Ciss
12
1000
C oss C rss
8
500
4
0 1 10 100
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
80 100 60 120
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
-ISD , Reverse Drain Current (A)
TJ = 150 C
10
TJ = 25 C
1
-I D , Drain-to-Source Current (A)
100
10 Tc = 25C Tj = 150C Single Pulse 1 1 10 100 1000 -VDS , Drain-toSource Voltage (V)
1ms 10ms
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF5Y9540CM
20
V DS
16
RD
VGS RG
-ID , Drain Current (A)
D.U.T.
+
12
-10V
8
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
4
td(on) tr t d(off) tf
VGS
0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
V DD
5
IRF5Y9540CM
600
VDS
EAS , Single Pulse Avalanche Energy (mJ)
L
500
RG
D .U .T
IA S
VD D A D R IV E R
ID -5.0A -7.0A BOTTOM -11A TOP
-20V -10V
400
tp
0.0 1
300
15V
200
100
Fig 12a. Unclamped Inductive Test Circuit
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-10V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
IRF5Y9540CM
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25 V, Starting TJ = 25C, L= 4.2mH Peak IAS = -11A, RG= 25
ISD -11A, di/dt -350 A/s, Pulse width 400 s; Duty Cycle 2%
VDD -100V, TJ 150C
Case Outline and Dimensions -- TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 11/00
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