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| MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS12UMA-4A HIGH-SPEED SWITCHING USE FS12UMA-4A OUTLINE DRAWING 10.5MAX. Dimensions in mm 4.5 3.2 7.0 1.3 16 3.6 12.5MIN. 3.8MAX. 1.0 0.8 2.54 2.54 0.5 2.6 GATE DRAIN SOURCE DRAIN q 10V DRIVE q VDSS ............................................................................... 200V q rDS (ON) (MAX) ............................................................. 0.40 q ID ......................................................................................... 12A TO-220 APPLICATION CS Switch for CRT Display monitor, Switch mode power supply, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 200 20 12 36 12 50 -55 ~ +150 -55 ~ +150 2.0 4.5MAX. Unit V V A A A W C C g Sep.1998 L = 200H Typical value MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS12UMA-4A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IGS = 10A, VDS = 0V VGS = 20V, VDS = 0V VDS = 200V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 200 20 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.30 1.80 8.0 700 95 30 15 20 110 35 0.95 -- Max. -- 10 1 4.0 0.40 2.40 -- -- -- -- -- -- -- -- -- 2.50 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 100V, ID = 6A, VGS = 10V, RGEN = RGS = 50 IS = 6A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 80 101 7 5 3 2 tw = 10s 100s 60 40 100 7 5 3 2 1ms 10ms DC Single Pulse 20 10-1 TC = 25C 0 0 50 100 150 200 7 5 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V 8V 6V OUTPUT CHARACTERISTICS (TYPICAL) 10 TC = 25C Pulse Test 4.5V VGS = 20V 10V 8V PD = 50W DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 5V 12 PD = 50W TC = 25C Pulse Test 4V 6 8 4 4.0V 4 2 0 0 4 8 12 16 20 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS12UMA-4A HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () TC = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25C Pulse Test 16 0.4 12 ID = 18A 0.3 VGS = 10V 20V 8 0.2 4 12A 6A 0.1 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 5 4 3 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC = 25C 75C 125C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) TC = 25C VDS = 10V Pulse Test 16 2 12 101 7 5 4 3 2 8 4 100 7 5 0 0 4 8 12 16 20 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 2 SWITCHING CHARACTERISTICS (TYPICAL) td(off) 102 SWITCHING TIME (ns) 7 5 4 3 2 tf CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 3 2 Ciss tr 102 7 5 3 TCh = 25C 2 f = 1MHZ VGS = 0V 2 3 4 5 7 101 2 Coss Crss 101 td(on) 7 5 4 3 2 TCh = 25C VDD = 100V VGS = 10V RGEN = RGS = 50 2 3 4 5 7 101 2 3 4 5 7 102 101 0 10 3 4 5 7 102 100 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS12UMA-4A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 SOURCE CURRENT IS (A) VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) 20 TCh = 25C ID = 12A 16 16 12 VDS = 50V 100V 150V 12 8 8 TC = 125C 75C 25C 4 4 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 6A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 4.0 3.0 100 7 5 3 2 2.0 1.0 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D = 1.0 2 0.5 1.2 100 0.2 7 5 0.1 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.0 0.8 10-1 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (C) |
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