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| FDP6030BL/FDB6030BL July 2000 FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features * 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V. * Critical DC electrical parameters specified at elevated temperature. * Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. * High performance trench technology for extremely low RDS(ON). * 175C maximum junction temperature rating. D D G G D TO-220 S FDP Series G S TC = 25C unless otherwise noted TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG RJC RJA Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Parameter FDP6030BL FDB6030BL 30 20 40 120 60 0.36 Units V V A W W/C C C/W C/W - Continuous - Pulsed (Note 1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range -65 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 62.5 Package Marking and Ordering Information Device Marking FDB6030BL FDP6030BL Device FDB6030BL FDP6030BL Reel Size 13'' Tube Tape Width 24mm N/A Quantity 800 45 2000 Fairchild Semiconductor International FDP6030BL/FDB6030BL Rev.C FDP6030BL/FDB6030BL Electrical Characteristics Symbol WDSS IAR TC = 25C unless otherwise noted Parameter Test Conditions (Note 1) Min Typ Max 150 40 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS Single Pulse Drain-Source VDD = 15 V, ID = 40 A Avalanche Energy Maximum Drain-Source Avalnche Current Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A Breakdown Voltage Temperature ID = 250 A, Referenced to 25C Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 1) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR 30 23 1 100 -100 V mV/C A nA nA VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 20 A, VGS = 10 V, ID = 20 A, TJ = 125C VGS = 4.5 V,ID = 17 A VGS = 10 V, VDS = 10 V VDS = 5 V, ID = 20 A 1 1.6 -4.5 0.015 0.021 0.019 3 V mV/C 0.018 0.030 0.024 ID(on) gFS 40 30 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 1) VDS = 15 V, VGS = 0 V, f = 1.0 MHz 1160 250 100 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 9 11 23 8 17 20 37 16 17 ns ns ns ns nC nC nC VDS = 15 V, ID = 20 A, VGS = 5 V 12 3.2 3.7 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 20 A (Note 1) (Note 1) 40 0.95 1.2 A V Note: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDP6030BL/FDB6030BL Rev.C FDP6030BL/FDB6030BL Typical Characteristics 80 ID, DRAIN-SOURCE CURRENT (A) 70 60 50 40 30 20 10 0 0 1 2 3 4 5 3.5V 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 3.5V 4.0V 4.5V 5.0V 7.0V 10V VGS = 3.0V VGS = 10V 6.0V 5.0V 4.5V 4.0V 3.0V VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 ID = 20A VGS = 10V ID = 10 A 0.05 0.04 0.03 TA = 125 C 0.02 0.01 0 TA = 25 C o o VGS = 0V 0.6 -50 -25 0 25 50 75 100 o 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 25 C ID, DRAIN CURRENT (A) 40 125 C 30 o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 TA = 125 C 1 25 C 0.1 0.01 0.001 0.0001 -55 C o o o VDS = 5V TA = -55 C o 20 10 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6030BL/FDB6030BL Rev.C FDP6030BL/FDB6030BL Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 20A 8 (continued) 1600 VDS = 5V 15V 10V CAPACITANCE (pF) 1400 1200 1000 800 600 400 200 0 COSS CRSS 0 5 10 15 20 CISS f = 1 MHz VGS = 0 V 6 4 2 0 0 5 10 15 20 25 25 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. 1000 VGS = 10V SINGLE PULSE ID, DRAIN CURRENT (A) RJC = 2.5 C/W 100 TC = 25 C RDS(ON) LIMIT 10 10ms 100ms DC o o Figure 8. Capacitance Characteristics. 2500 2000 POWER (W) 10s 100s 1ms SINGLE PULSE R JC =2.5C/W TC = 25C 1500 1000 500 1 0.1 1 10 100 0 0.01 0.1 1 10 100 1,000 SINGLE PULSE TIME (mSEC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.3 0.2 0.1 0.2 D = 0.5 R JC (t) = r(t) * RJC R JC = 2.5 C/W P(pk) 0.1 0.05 0.05 0.02 Single Pulse t1 0.03 0.01 0.02 0.01 0.01 t2 TJ - TC = P * RJC (t) Duty Cycle, D = t1 /t2 0.1 1 t1 ,TIME (ms) 10 100 1000 Figure 11. Transient Thermal Response Curve. FDP6030BL/FDB6030BL Rev.C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E |
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