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| Datasheet File OCR Text: |
| SD1490-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1490-1 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: * Gold Metalization * Emitter Ballasting * Internal Matching PACKAGE STYLE .450 BAL FLG.(A) MAXIMUM RATINGS IC VCB PDISS TJ TSTG JC O O 8.0 A 45 V 155 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 1.15 C/W O O O O 1 = Collector 2 = Base 3 = Emitter CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO hFE COB GP Gp IMD3 IC = 200 mA IC = 50 mA IE = 10 mA VCE = 5.0 V VCB = 28 V VCE = 26.5 V VCE = 28 V Pout = 50 W VISION TC = 25 C O TEST CONDITIONS (PER SIDE) MINIMUM TYPICAL MAXIMUM 30 45 3.0 UNITS V V V IC = 3.0 A f = 1.0 MHz IC = 2 X 1.6 A IC = 2 X 250 mA f = 860 MHz f = 860 MHz f = 860 MHz = -16dB 10 72 8.0 7.0 9.0 8.0 100 --pF dB dB VCE = 26.5 V Pout = 25 W SOUND = -10 dB = -8.0dB -45 dBc CHROMA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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