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| 2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 TO-3P Features * * * * * * * High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes 3 1 1 2 3 1. Gate 2. Source 3. Drain Table 1 Ordering Information Type No. 2SK2220 2SK2221 VDSS 180 V 200 V 2 ---------------------------------------- ---------------------------------------- ---------------------------------------- Table 2 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK2220 Symbol VDSX Ratings 180 Unit V -------------------------------------------------------------------------------------- -------- 2SK2221 Gate to source voltage Drain current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID IDR Pch* Tch Tstg ------ 200 20 8 8 100 150 -55 to +150 V A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * Value at Tc = 25 C 2SK2220, 2SK2221 Table 3 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK2220 Symbol V(BR)DSX Min 180 200 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff 20 Typ -- -- -- Max -- -- -- V IG = 100 A, VDS = 0 ID = 100 mA VDS = 10 V Unit V Test conditions ID = 10 mA, VGS = -10 V -------------------------------------------------------------------------------------- -------- 2SK2221 Gate to source breakdown voltage Gate to source cutoff voltage -------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 0.15 -- 1.45 V -------------------------------------------------------------------------------------- Drain to source saturation voltage Forward transfer admittance -- -- 12 V ID = 8 A, VGD = 0 V* ID = 3 A VDS = 10 V * VGS = -5 V VDS = 10 V f = 1 MHz VDD = 30 V ID = 4 A -------------------------------------------------------------------------------------- 0.7 1.0 1.4 S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time * Pulse Test -- -- -- -- -- 600 800 8 250 90 -- -- -- -- -- pF pF pF ns ns ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- |
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