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Transistors
2SB1050
Silicon PNP epitaxial planar type
For low-frequency amplification
6.90.1
(0.4)
Unit: mm
2.50.1 (1.0) (1.5)
3.50.1 (1.0) 2.00.2 2.40.2
Features
* Low collector-emitter saturation voltage VCE(sat) * Large collctor current IC * M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
(1.5)
R 0.9 R 0.7
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -30 -20 -7 -5 -8 1 150 -55 to +150 cm2 Unit V V V A A W C C
1.00.1
(0.85)
1.250.05
0.450.05
0.550.1
3 (2.5)
2 (2.5)
1
1: Base 2: Collector 3: Emitter M-A1 Package
Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
*1
Symbol VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob
Conditions IC = -1 mA, IB = 0 IE = -10 A, IC = 0 VCB = -10 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = -2 A IC = -3 A, IB = - 0.1 A VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -20 V, IE = 0, f = 1 MHz
Min -20 -7
Typ
Max
Unit V V
-100 -100 90 625 -1 120 85
nA nA V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE P 90 to135 Q 120 to 205 R 180 to 625
4.10.2
4.50.1
Publication date: November 2002
SJC00067BED
1
2SB1050
PC Ta
1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
-6 IB = -50 mA -45 mA
IC VCE
Ta = 25C -40 mA -35 mA -30 mA -25 mA -3 -20 mA -15 mA -2 -10 mA -5 mA
-12
IC VBE
VCE = -2 V
Collector power dissipation PC (W)
1.0
-5
-10
Collector current IC (A)
Collector current IC (A)
0.8
-4
-8 Ta = 75C
25C -25C
0.6
-6
0.4
-4
0.2
-1
-2
0
0
0
20
40
60
80 100 120 140 160
0
-1
-2
-3
-4
-5
-6
0
0
- 0.4
- 0.8
-1.2
-1.6
-2.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
hFE IC
VCE = -2 V Ta = 75C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 30
fT I E
240 VCB = -6 V Ta = 25C
600
Forward current transfer ratio hFE
-10
400
25C
Transition frequency fT (MHz)
-10
500
200
160
300
-25C
-1
Ta = 75C 25C -25C
120
200
80
- 0.1
100
40
0 - 0.01
- 0.1
-1
-10
- 0.01 - 0.01
- 0.1
-1
0
1
10
100
1 000
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
300 IE = 0 f = 1 MHz Ta = 25C
250
200
150
100
50
0 -1
-10
-100
Collector-base voltage VCB (V)
2
SJC00067BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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