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RHRU7570, RHRU7580, RHRU7590, RHRU75100 Data Sheet April 1995 File Number 3925.1 75A, 700V - 1000V Hyperfast Diodes RHRU7570, RHRU7580, RHRU7590 and RHRU75100 (TA49068) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns * Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PACKAGING AVAILABILITY PART NUMBER RHRU7570 RHRU7580 RHRU7590 RHRU75100 PACKAGE TO-218 TO-218 TO-218 TO-218 BRAND RHRU7570 RHRU7580 RHRU7590 RHRU75100 Package JEDEC STYLE TO-218 ANODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified RHRU7570 RHRU7580 800 800 800 75 150 750 190 50 -65 to +175 RHRU7590 RHRU75100 UNITS 900 900 900 75 150 750 190 50 -65 to +175 1000 1000 1000 75 150 750 190 50 -65 to +175 V V V A A A W mj oC Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +52oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 700 700 700 75 150 750 190 Avalanche Energy (L = 40mH) (See Figures 10 and 11) . . . . . . . . . . EAVL 50 Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to +175 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 RHRU7570, RHRU7580, RHRU7590, RHRU75100 Electrical Specifications SYMBOL VF IR TC = +25oC, Unless Otherwise Specified RHRU7570 TEST CONDITION IF = 75A, TC = +25oC IF = 75A, TC = +150oC VR = 700V, TC = +25oC VR = 800V, TC = +25oC VR = 900V, TC = +25oC VR = 1000V, TC = +25oC VR = 700V, TC = +150oC VR = 800V, TC = +150oC VR = 900V, TC = +150oC VR = 1000V, TC = +150oC IF = 1A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s tA tB QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction capacitance. RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt R 1 L1 = SELF INDUCTANCE OF R4 + LLOOP Q1 +V1 0 t2 t1 R2 Q4 t3 C1 0 -V2 R3 Q3 -V4 VRM R4 LLOOP DUT +V3 Q2 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 0 0.25 IRM IRM VR RHRU7580 MIN TYP 55 40 240 220 MAX 3.0 2.5 500 2.0 85 100 0.8 MIN - RHRU7590 TYP 55 40 240 220 MAX 3.0 2.5 500 2.0 85 100 0.8 RHRU75100 MIN TYP 55 40 240 220 MAX 3.0 2.5 500 2.0 85 100 0.8 UNITS V V A A A A mA mA mA mA ns ns ns ns nC pF oC/W MIN - TYP 55 40 240 220 - MAX 3.0 2.5 500 2.0 85 100 0.8 IR tRR IF = 75A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s VR = 10V, IF = 0A IF dIF dt tA tRR tB FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 2 RHRU7570, RHRU7580, RHRU7590, RHRU75100 Typical Performance Curves 400 1000 +175oC IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 100 +100oC +175oC 10 +25oC 100 +100oC 10 1 0.1 +25oC 1 0 1 3 2 VF, FORWARD VOLTAGE (V) 4 5 0.01 0 200 400 600 800 1000 VR , REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 100 TC = +25oC FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 300 250 t, RECOVERY TIMES (ns) TC = +100oC t, RECOVERY TIMES (ns) 80 tRR 200 150 tRR 60 tA 40 tB tB 100 50 0 tA 20 0 1 10 IF, FORWARD CURRENT (A) 75 1 10 IF, FORWARD CURRENT (A) 75 FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC 500 TC = +175oC FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC 75 t, RECOVERY TIMES (ns) 400 IF(AV), AVERAGE FORWARD CURRENT (A) 60 DC 45 SQ. WAVE 30 300 tRR 200 tB 100 tA 15 0 0 25 1 10 IF, FORWARD CURRENT (A) 75 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES 3 RHRU7570, RHRU7580, RHRU7590, RHRU75100 Typical Performance Curves 800 CJ , JUNCTION CAPACITANCE (pF) 700 600 500 400 300 200 100 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) (Continued) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L R + VDD 130 1M DUT VAVL 12V Q2 130 CURRENT SENSE IV VDD IL IL 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4 |
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