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POSITION SENSITIVE PHOTOMULTIPLIER TUBES
PRELIMINARY DATA OCT. 2001
R8520-00-C12 R8520U-00-C12
FEATURES
I 6 (X) + 6 (Y) Cross Plate Anode I Flangeless Type I High Speed Response
APPLICATIONS
I PET (Positron Emission Tomography) I Compact Gamma Camera I Scintillation Mammography
GENERAL
Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area Window Material Structure Dynode Number of Stages Anode Weight Suitable Socket Description 300 to 650 420 Bialkali 22 x 22 Borosilicate glass Metal channel dynode 11 6 (X) + 6 (Y) Cross plate anode Approx. 28 E678-32B (sold separately) Unit nm nm -- mm2 -- -- -- -- g --
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter Supply Voltage Between Anode and Cathode Average Anode Current in Total Value 1000 0.1 Unit V dc mA
CHARACTERISTICS (at 25 C)
Cathode Sensitivity Parameter Luminous (2856 K) Blue Sensitivity Index (CS 5-58) Luminous (2856 K) Min. 50 7 15 -- -- -- Typ. 70 8.5 70 1 x 106 2 1.4 Max. -- -- -- -- 10 -- Unit A/lm -- A/lm -- nA ns
Anode Sensitivity Gain Anode Dark Current in Total of Anodes (after 30 min storage in darkness) Time Response Anode Pulse Rise Time
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes Ratio K 0.5 G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 P 1 1 1 1 0.5 1.5 2 1 1 1 1 1
Supply Voltage: 800 V dc, K: Cathode, G: Grid, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K.
POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8520-00-C12, R8520U-00-C12
Figure 1: Typical Spectral Response
100
TPMHB0670EA
Figure 2: Typical Gain and Anode Dark Current
108
TPMHB0671EA
10-4
CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
CATHODE RADIANT SENSITIVITY 10
107 GAIN 106
10-5
10-6
105 1 QUANTUM EFFICIENCY
10-7
104 ANODE DARK CURRENT IN TOTAL OF ANODES 103
10-8
10-9
0.1 102 10-10
0.01 100
200
300
400
500
600
700
800
900
101 400
600
800
10-11 1000
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Figure 3: Pulse Height Distribution
TPMHB0672EA
Figure 4: Position Response Using PX-anodes
TPMHB0673EA
1200
CALCULATED POSITION (channel)
1000
RELATIVE COUNTS
800
600
400
200
0
100
200
300
400
500
600
700
800
900 1000
0 -15
-10
-5
0
5
10
ANODE DARK CURRENT (A)
15
ADC CHANNEL
SUPPLY VOLTAGE CRYSTAL SOURCE P.H.R. : -800 V : 1" CUBE Nal (Tl) : 57Co (122 keV) : 16.9 %
GAIN
INCIDENT POSITION (mm)
SUPPLY VOLTAGE LIGHT SOURCE : -800 V : 2 mm x 2 mm x 20 mm BGO CRYSTAL (irradiated by 137Cs) A STEP OF SCANNING : 0.5 mm
Figure 5: Spatial Resolution X-Axis
100
TPMHB0674EA
Y-Axis
100
TPMHB0675EA
80
80 PX1 PX2 PX3 PX4 PX5 PX6
RELATIVE OUTPUT (%)
RELATIVE OUTPUT (%)
PY1 60
PY2
PY3
PY4
PY5
PY6
60
40
40
20
20
0
0
5
10
15
20
25
30
0
0
5
10
15
20
25
30
POSITION (mm)
SUPPLY VOLTAGE : -800 V : W-LAMP LIGHT SOURCE SPOT DIAMETER : 1 mm * Output of each anode under a light spot scanning at a center.
POSITION (mm)
SUPPLY VOLTAGE : -800 V : W-LAMP LIGHT SOURCE SPOT DIAMETER : 1 mm
Figure 6: Circuit Diagram Example and Positioning Histogram
PX1 PX2 PX3 PX4 10 x 10 GSO ARRAY PX5 PX6 Xb INTEGRATION A/D Xa Xa + Xb X ADDRESS Xa
INTEGRATION
A/D
PY1 R8520-00-C12 PY2 PY3 PY4 PY5 PY6
Yc
INTEGRATION
A/D Y ADDRESS Yc Yc + Yd
Yd
INTEGRATION Sum
A/D
TIMING PICK-OFF and ENERGY WINDOW
EVENT SIGNAL
TPMHC0205EA
Positioning histogram of a 10 x 10 array of 2.0 mm x 2.0 mm x 20 mm GSO elements for 511 keV -rays. (crystal pitch is 2.2 mm)
Figure 7: R8520-00-C12 Dimensional Outline and Basing Diagram (Unit: mm) Basing Diagram
25.7 0.5 22 27.2 1.0 7.0 0.5 5 MAX. GUIDE MARK 45 10 2.54 PITCH G K Dy2 Dy4 Dy6 PHOTOCATHODE EFFECTIVE AREA Top View Side View
3.5 3.5 2.5 2.63
Dy1 Dy3 Dy5 Dy7 Dy9 Dy11 PX1 123456789 10 32 31 11 30 12 29 13 28 14 27 15 26 16 33 34 25 24 23 22 21 20 19 18 17 PX2 PX3 PY1 PX4 PX5 PX6 PY6 PY5 PY4 PY3 PY2
1.2 MAX. 5 MAX.
25- 0.45 34- 1.5 Bottom View
4-R3.5 Dy8 Dy10
PX1 PX2 PX3 PX4 PX5 PX6
2.28
18
0.5 2.5 2.28 0.5 2.5 3.5 3.5 2.5 PY1 PY2
Bottom View Basing Diagram K Dy P G : Photocathode : Dynode (Dy1-Dy11) : Anode (PX1-PX6) (PY1-PY6) : Grid
PY6 PY3 PY5 PY4 PX-ANODE PY-ANODE Anode Pattern (Top View) 2.28
18
TPMHA0483EA
Figure 8: R8520U-00-C12 Dimensional Outline and Basing Diagram (Unit: mm) (R8520-00-C12 with an Insulation Cover) Basing Diagram
30 0.5 22 1 MAX. 29.0 0.5 4 MAX. 12.0 0.5 2.54 PITCH K Dy2 Dy4 Dy6 PHOTOCATHODE EFFECTIVE AREA Top View 4.4 0.7 INSULATION COVER Side View Bottom View PY6 PY5 PY4 PY3 PY2 25- 0.45 Dy8 Dy10 123456789 10 32 31 11 12 30 29 13 GUIDE 28 14 CORNER 27 15 26 16 25 24 23 22 21 20 19 18 17 PX1 PX2 PX3 PY1 PX4 PX5 PX6 G Dy1 Dy3 Dy5 Dy7 Dy9 Dy11
Bottom View Basing Diagram K Dy P G : Photocathode : Dynode (Dy1-Dy11) : Anode (PX1-PX6) (PY1-PY6) : Grid
TPMHA0484EA
[ACCESSORIES] (Unit: mm) G Socket E678-32B SOLD SEPARATELY
22.86 20.32 2.54 4.45 2.92
22.86
20.32
12.7
0.51
12.7
1.57
TACCA0094ED
G D Type Socket Assembly E7514 SOLD SEPARATELY
25.4 0.5 PIN No. 1 25.4 0.5 PX6 PY6 PX5 PY5 PX4 15.0 0.5 POM HOUSING PY4 PX3 PY3 PX2 PY2 450 PX1 PY1 DY11 DY10 DY9 DY8 PX2 PX1 -H.V : RG-174/U (RED) POTTING COMPOUND PY1 PX4 PX5 PX3 PX6 PY2 PY3 PY4 PY5 PY6 DY7 DY6 DY5 DY4 DY3 DY2
16 24
PX6 PY6 PX5 PY5 PX4 PY4 PX3 PY3 PX2 PY2 PX1 PY1 R18 R14 C3 C2 C1 SIGNAL OUTPUT : 0.8D-QEV (GRAY)
15 23
14 22
12 20 11 19 10 13
8
R17 R13
27
R16 R12
7
R11
28
R10
6
R9
29
R8
5
R1, R14: 110 k R2: 330 k R3 to R13: 220 k R15: 1 M R16 to R18: 51 C1 to C3: 0.01 F
R7
30
ORIENTATION BY MARKING
R6
4
R5
31
R4 R3 DY1 G K
3
R2
1
R15
32
R1
-H.V : RG-174/U (RED)
TACCA0236EB
POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8520-00-C12, R8520U-00-C12
WARNING ~High Voltage~
The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode (potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded). Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments.
* PATENT: USA Pat. No. 5410211 PATENT PENDING: JAPAN 12, USA 8, EUROPE 9
HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMH1276E01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
OCT. 2001 IP Printed in Japan (1000)

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