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| HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 File Number 4651.1 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49315. Features * 6.2A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical EOFF. . . . . . . . . . . . . . . . . . . 200J at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Temperature Compensating SABERTM Model Thermal Impedance SPICE Model www.intersil.com/ * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" Packaging JEDEC TO-220AB E C G COLLECTOR Ordering Information PART NUMBER HGTP1N120CND HGT1S1N120CNDS PACKAGE TO-220AB TO-263AB BRAND 1N120CND 1N120CND (FLANGE) JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, e.g. HGT1S1N120CNDS9A. COLLECTOR (FLANGE) G E Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 SABERTM is a trademark of Analogy, Inc. HGTP1N120CND, HGT1S1N120CNDS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP1N120CND, HGT1S1N120CNDS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Rectified Forward Current at TC = 148oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6cm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 6.2 3.2 4 6 20 30 6A at 1200V 60 0.476 -55 to 150 300 260 8 11 UNITS V A A A A V V W W/oC oC oC oC s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC MIN 1200 6.0 6 TYP 20 2.05 2.75 7.1 9.7 13 16 15 11 65 365 175 140 MAX 250 1.0 2.4 3.2 250 19 28 21 15 95 450 195 155 UNITS V A A mA V V V nA A V nC nC ns ns ns ns J J Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON EOFF IC = 1.0A, VGE = 15V TC = 25oC TC = 150oC Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge IC = 50A, VCE = VGE VGE = 20V TJ = 150oC, RG = 82, VGE = 15V, L = 2mH, VCE(PK) = 1200V IC = 1.0A, VCE = 0.5 BVCES IC = 1.0A, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-Off Energy (Note 3) IGBT and Diode at TJ = 25oC ICE = 1.0A, VCE = 0.8 BVCES, VGE = 15V, RG = 82, L = 4mH, Test Circuit (Figure 20) 2 HGTP1N120CND, HGT1S1N120CNDS Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time Thermal Resistance Junction To Case TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr RJC IEC = 1A IEC = 1A, dIEC/dt = 200A/s IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses include losses due to diode recovery. TEST CONDITIONS IGBT and Diode at TJ = 150oC, ICE = 1.0 A, VCE = 0.8 BVCES, VGE = 15V, RG = 82, L = 4mH, Test Circuit (Figure 20) MIN TYP 13 11 75 465 385 200 1.3 MAX 20 18 100 625 460 225 1.8 50 2.1 3 UNITS ns ns ns ns J J V ns oC/W oC/W Typical Performance Curves 7 ICE , DC COLLECTOR CURRENT (A) 6 5 4 3 2 1 0 Unless Otherwise Specified ICE , COLLECTOR TO EMITTER CURRENT (A) 7 6 5 4 3 2 1 0 VGE = 15V TJ = 150oC, RG = 82, VGE = 15V, L = 2mH 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 TC , CASE TEMPERATURE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE fMAX , OPERATING FREQUENCY (kHz) 300 200 100 TJ = 150oC, RG = 82, L = 4mH, VCE = 960V TC 75oC 75oC 110oC 110oC VGE 15V 13V 15V 13V FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (ms) 20 VCE = 840V, RG = 82, TJ = 125oC tSC 18 18 16 16 14 ISC 12 14 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) 10 PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 2.1oC/W, SEE NOTES 5 1.0 0.5 12 2.0 3.0 10 13 14 VGE , GATE TO EMITTER VOLTAGE (V) 10 15 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) 20 HGTP1N120CND, HGT1S1N120CNDS Typical Performance Curves ICE , COLLECTOR TO EMITTER CURRENT (A) 6 5 4 3 2 1 0 TC = -55oC TC = 150oC TC = 25oC Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 6 5 4 3 2 1 0 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 0 1 2 3 4 5 6 7 8 TC = 25oC TC = -55oC TC = 150oC DUTY CYCLE < 0.5%, VGE = 13V PULSE DURATION = 250s 0 1 2 3 4 5 6 7 8 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1000 800 600 400 200 0 0.5 TJ = 25oC, VGE = 13V TJ = 25oC, VGE = 15V 1 1.5 2 2.5 3 TJ = 150oC, VGE = 13V TJ = 150oC, VGE = 15V EOFF , TURN-OFF ENERGY LOSS (J) 1200 EON , TURN-ON ENERGY LOSS (J) RG = 82, L = 4mH, VCE = 960V 500 RG = 82, L = 4mH, VCE = 960V 400 TJ = 150oC, VGE = 13V OR 15V 300 200 TJ = 25oC, VGE = 13V OR 15V 100 0 0.5 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 24 RG = 82, L = 4mH, VCE = 960V tdI , TURN-ON DELAY TIME (ns) TJ = 25oC, VGE = 13V 20 TJ = 150oC, VGE = 13V 16 trI , RISE TIME (ns) 28 RG = 82, L = 4mH, VCE = 960V 24 TJ = 25oC, TJ = 150oC, VGE = 13V 20 16 12 8 4 0.5 12 TJ = 25oC, VGE = 15V TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 15V 8 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 4 HGTP1N120CND, HGT1S1N120CNDS Typical Performance Curves 84 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 82, L = 4mH, VCE = 960V 80 76 72 68 64 60 56 0.5 TJ = 25oC, VGE = 13V TJ = 150oC, VGE = 13V TJ = 25oC, VGE = 15V TJ = 150oC, VGE = 15V tfI , FALL TIME (ns) 520 480 440 400 360 320 280 1 1.5 2 2.5 3 240 0.5 1 TJ = 25oC, VGE = 13V OR 15V 1.5 2 2.5 3 TJ = 150oC, VGE = 13V OR 15V Unless Otherwise Specified (Continued) 560 RG = 82, L = 4mH, VCE = 960V ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VCE = 10V 14 PULSE DURATION = 250s 12 10 8 6 4 2 0 6 TC = 150oC TC = 25oC TC = -55oC VGE , GATE TO EMITTER VOLTAGE (V) 16 15 VCE = 800V 12 VCE = 400V 9 VCE = 1200V 6 3 IG(REF) = 1mA, RL = 600, TC = 25oC 0 0 4 8 12 16 20 9 12 15 VGE , GATE TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC 350 FREQUENCY = 1MHz 300 C, CAPACITANCE (pF) CIES 250 200 150 100 COES 50 CRES 0 0 5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14. GATE CHARGE WAVEFORMS 12 10 8 6 4 2 0 PULSE DURATION = 250s DUTY CYCLE < 0.5%, TC = 110oC VGE = 15V VGE = 14V VGE = 13V 0 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 5 HGTP1N120CND, HGT1S1N120CNDS Typical Performance Curves ZJC , NORMALIZED THERMAL RESPONSE 2.0 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.005 10-5 10-4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 PD t2 100 t1 Unless Otherwise Specified (Continued) t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 70 60 2 TC = 150oC 1 TC = -55oC t, RECOVERY TIMES (ns) 50 40 30 20 10 0 0.5 5 IEC , FORWARD CURRENT (A) TC = 25oC, dIEC/dt = 200A/s trr 0.5 TC = 25oC 0.2 ta tb 0.1 0 0.4 0.8 1.2 1.6 2.0 1 2 3 4 5 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A) FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT Test Circuit and Waveforms VGE 90% L = 4mH RHRD4120 10% EON EOFF ICE + 90% VDD = 960V VCE tfI td(OFF)I 10% td(ON)I trI ICE RG = 82 - FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS 6 HGTP1N120CND, HGT1S1N120CNDS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBDTM is a trademark of Emerson and Cumming, Inc. |
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