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P - HEMT Preliminary Datasheet
Features * Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications (F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz) Low cost miniature package SOT343 LG = 0.4m; W G = 800m Tape and Reel packaging
Electrostatic discharge sensitive device, observe handling precautions! Pin assignment: 1 = gate 2 = source 3 = drain 4 = source
CFH800
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* * *
ESD:
Type
Marking
Ordering code (taped)
Package 1)
CFH 800
N8s
on request
SOT343
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < tbdC) 2) Thermal resistance Channel-soldering point source
1) Dimensions see page 7 2) TS: Temperature measured at soldering point
Symbol VDS VDG VGS ID TCh Tstg Ptot 5.5 6.5 -2.0 160 150 -65...+150 350
Unit V V V mA C C mW
RthChS
198
K/W
Infineon Technologies
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01.03.2002 WS GS CE GaAs
P - HEMT
CFH800
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Electrical characteristics at TA = 25C unless otherwise specified Characteristics Drain-source saturation current
VDS = 3 V VDS = 3 V VDS = 3 V VDS = 3 V VDS = 3 V VDS = 3 V VDS = 3 V VDS = 3 V VGS = 0 V ID = 1 mA ID = 30 mA ID = 30 mA ID = 10 mA ID = 30 mA ID = 10 mA ID = 30 mA ID = 10 mA ID = 30 mA f = 1.8 GHz f = 1.8 GHz
Symbol
min
typ
max
Unit
IDSS VGS(P) IG gm F
0 -0.7 140 -
80 -0.25 200 0.56 0.50 15 17 8.5 13
140 0.0 10 1 -
mA V A mS dB
Pinch-off voltage Gate leakage current Transconductance Noise figure*
Associated gain*
f = 1.8 GHz f = 1.8 GHz
Ga
16 -
dB
IIP3*
VDS = 3 V VDS = 3 V f = 1.8 GHz f = 1.8 GHz
IIP3
-
dBm
* Parameters are measured for input impedance for minimum noise figure and output impedance for maximum gain.
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pg. 2/7
01.03.2002 WS GS CE GaAs
P - HEMT
Typical Common Source S - Parameters @ 3V; 10mA; Zo = 50
CFH800
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f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.1 0.9625 -14.2 11.1164 168.7 0.0338 73.6 0.6449 -15.7 0.2 0.9396 -22 10.9663 163.1 0.0385 72.1 0.6334 -22.4 0.3 0.9166 -33.4 10.6984 155 0.0481 68.9 0.6178 -32.7 0.4 0.8861 -44.6 10.2628 146.9 0.0607 64.2 0.594 -42.2 0.5 0.8513 -54.8 9.74 139.7 0.0725 59.8 0.5711 -51.3 0.6 0.8163 -64.6 9.2192 132.8 0.0825 55.8 0.5428 -59.5 0.7 0.7865 -73.6 8.7366 126.7 0.092 52.8 0.5211 -67.5 0.8 0.7582 -82.5 8.2519 121.1 0.0982 50.2 0.494 -75 0.9 0.7312 -90.6 7.7566 116 0.1035 48.2 0.472 -81.9 1 0.708 -98.4 7.3039 111.1 0.1072 45.4 0.4472 -88.7 1.1 0.6843 -105.7 6.8673 106.4 0.1117 43.5 0.4253 -94.7 1.2 0.6665 -112.8 6.4912 102.1 0.1159 41.1 0.3995 -100.6 1.3 0.6535 -119.1 6.1071 98.1 0.1194 39.9 0.379 -106.3 1.4 0.6451 -125.2 5.7901 94.3 0.1225 38.7 0.3581 -112.7 1.5 0.6368 -130.7 5.4939 90.6 0.1245 37.7 0.3445 -118.4 1.6 0.6299 -136.3 5.2283 87.1 0.1262 36.6 0.3277 -124.5 1.7 0.6246 -141.4 4.9491 83.9 0.1274 35.6 0.3156 -130.7 1.8 0.6208 -146.4 4.7146 80.8 0.1286 35 0.3044 -138 1.9 0.6164 -151.1 4.4907 77.5 0.1302 34.4 0.3001 -144.8 2 0.6147 -155.6 4.2842 74.7 0.1314 34 0.2953 -151.5 2.1 0.6145 -160 4.081 72.1 0.1324 33.3 0.2966 -157.7 2.2 0.6151 -163.8 3.9114 69.3 0.1328 32.9 0.2982 -163.8 2.3 0.6162 -167.7 3.7677 66.3 0.1342 32.6 0.3056 -169.5 2.4 0.6171 -171.1 3.6238 63.5 0.1345 32.5 0.3107 -174.2 2.5 0.6184 -174.8 3.4535 61.1 0.1361 32 0.3205 -178.8 3 0.6168 171.5 2.8397 50.5 0.1374 31.8 0.3641 166.2 3.5 0.612 160.2 2.4102 40.2 0.1387 34 0.3952 158.3 4 0.6154 150.8 2.1095 32.1 0.1422 37.4 0.4028 154.3 4.5 0.6081 142.7 1.9033 23.7 0.1523 40.5 0.3976 150.6 5 0.6042 134.8 1.7615 15 0.1667 41.9 0.3967 145.2 5.5 0.6158 127 1.6573 5.5 0.1839 41 0.3972 137.2 6 0.6341 118.7 1.5577 -5 0.1931 38 0.4 123
Typical Common Source Noise - Parameters @ 3V; 10mA; Zo = 50
f[GHz] 0.9 1.8 2.4 3.0 Fmin [dB] 0.41 0.56 0.61 0.69 Ga [dB] 18.7 15.6 13.5 11.4 Mag (opt ) Phase(opt) [deg] 0.33 0.37 0.37 0.38 23 98 136 170 Rn/50 0.14 0.10 0.10 0.06
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01.03.2002 WS GS CE GaAs
P - HEMT
Typical Common Source S - Parameters @ 3V; 20mA; Zo = 50
CFH800
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f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.1 0.957 -19.4 15.4898 166.1 0.0257 92.3 0.513 -19.7 0.2 0.9263 -28.6 15.0437 159.5 0.0298 78.5 0.5015 -29.5 0.3 0.8912 -42 14.4003 150 0.0383 67.6 0.4911 -43.3 0.4 0.8527 -55.1 13.5077 141.1 0.0511 63.3 0.4705 -55.8 0.5 0.8069 -66.9 12.5367 133.1 0.0606 58.9 0.4496 -67 0.6 0.7669 -78 11.5987 126 0.0687 54.3 0.4276 -77.2 0.7 0.7328 -87.8 10.7466 119.8 0.0753 51.6 0.4104 -86 0.8 0.7028 -97.3 9.9389 114.3 0.0793 49.2 0.391 -94.7 0.9 0.6782 -105.6 9.2058 109.4 0.0833 47.6 0.3741 -102.2 1 0.6559 -113.5 8.5522 104.6 0.0862 45.5 0.357 -110.1 1.1 0.6367 -120.5 7.967 100.4 0.0899 44.5 0.3423 -116.6 1.2 0.6228 -127.4 7.4486 96.5 0.0927 43.9 0.3275 -123.6 1.3 0.6148 -133.5 6.9662 92.9 0.0958 43.4 0.3147 -129.8 1.4 0.6095 -139.1 6.5399 89.4 0.0981 42.6 0.3029 -137.2 1.5 0.6056 -144.3 6.166 86.1 0.1006 42.1 0.2957 -143.2 1.6 0.6036 -149.4 5.8202 82.9 0.1028 41.9 0.2893 -149.9 1.7 0.603 -153.9 5.5013 79.9 0.1046 41.7 0.2874 -155.7 1.8 0.6027 -158.3 5.2209 77.1 0.1062 41.1 0.2873 -162.7 1.9 0.6031 -162.5 4.9601 74.3 0.1085 40.9 0.2905 -168.5 2 0.6038 -166.5 4.7314 71.6 0.1107 41 0.2939 -174.5 2.1 0.6071 -170.2 4.5082 69.1 0.1126 41 0.3017 -179.4 2.2 0.6095 -173.4 4.3096 66.8 0.1142 40.9 0.3098 175.8 2.3 0.6137 -176.9 4.1146 64.2 0.1156 40.8 0.3214 171.6 2.4 0.6161 179.9 3.9305 61.5 0.1171 41.1 0.3296 167.8 2.5 0.6193 176.7 3.7486 59.2 0.1183 41.2 0.3432 164.4 3 0.6317 164.5 3.0678 49.6 0.1262 42 0.3936 154 3.5 0.6319 154 2.5974 40.6 0.1312 44.1 0.4201 148.5 4 0.6312 145 2.2788 33 0.1405 47.1 0.4252 144.9 4.5 0.6218 137.3 2.0568 24.9 0.1557 49.2 0.4164 141 5 0.6144 129.7 1.8964 16.6 0.1744 49.7 0.4099 135.7 5.5 0.6215 122.6 1.7717 7.3 0.1943 47.7 0.4095 127.8 6 0.6389 115 1.6692 -3.5 0.2042 42.8 0.4137 114
Typical Common Source Noise - Parameters @ 3V; 20mA; Zo = 50
f[GHz] 0.9 1.8 2.4 3.0 Fmin [dB] 0.39 0.52 0.57 0.69 Ga [dB] 20.4 16.5 13.6 12 Mag (opt ) Phase(opt) [deg] 0.28 0.36 0.38 0.40 36 115 134 175 Rn/50 0.11 0.09 0.08 0.06
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01.03.2002 WS GS CE GaAs
P - HEMT
Typical Common Source S - Parameters @ 3V; 30mA; Zo = 50
CFH800
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f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.1 0.9654 -20 18.0171 164.6 0.0133 29.7 0.4513 -22.9 0.2 0.9138 -30.7 17.3207 157.5 0.0222 56.2 0.4306 -34.6 0.3 0.8673 -46.5 16.3632 147.3 0.0373 65.4 0.4156 -51.6 0.4 0.8224 -61 15.1455 138 0.0472 61.9 0.405 -65.2 0.5 0.7789 -73.5 13.8972 129.8 0.0555 58.7 0.3886 -77.3 0.6 0.7403 -85.1 12.708 122.7 0.0619 54.9 0.3734 -88.4 0.7 0.7062 -95.1 11.6667 116.5 0.0663 52.3 0.3624 -97.8 0.8 0.6772 -104.5 10.683 111.1 0.0712 50.5 0.3507 -106.9 0.9 0.6531 -112.7 9.828 106.4 0.0748 49.1 0.3377 -114.3 1 0.6348 -120.4 9.0566 102 0.079 47.4 0.3262 -122.3 1.1 0.6211 -127.3 8.3928 98 0.0818 46.5 0.3153 -129.1 1.2 0.6105 -133.9 7.8152 94.1 0.0842 46 0.305 -136 1.3 0.6033 -139.5 7.2867 90.5 0.0872 45.9 0.2968 -142.2 1.4 0.5994 -145 6.8305 87.1 0.09 45.2 0.2902 -149.2 1.5 0.597 -149.9 6.4218 84 0.0928 45.4 0.2884 -155.1 1.6 0.5958 -154.8 6.0636 81.1 0.0948 45 0.2853 -161.6 1.7 0.5955 -159.1 5.7329 78.2 0.0973 45.3 0.2866 -167.2 1.8 0.5967 -163.3 5.4261 75.4 0.0996 45.3 0.2892 -173.6 1.9 0.5991 -167.2 5.1489 72.6 0.1012 45.8 0.2968 -178.7 2 0.6022 -170.9 4.8835 70.2 0.1029 45.9 0.3037 176.3 2.1 0.6071 -174.4 4.6448 67.8 0.1049 45.8 0.3129 172 2.2 0.6114 -177.4 4.4241 65.4 0.1074 45.3 0.3223 167.9 2.3 0.6159 179.4 4.2115 63.1 0.1092 45.1 0.3351 164.2 2.4 0.6176 176.5 4.0336 60.8 0.1116 44.9 0.3455 161 2.5 0.6201 173.5 3.8571 58.7 0.1131 45.4 0.3592 158.3 3 0.6346 161.8 3.1643 49.3 0.1225 47.1 0.4066 149.6 3.5 0.6381 151.7 2.6828 40.4 0.1314 49 0.4351 144.5 4 0.6421 142.7 2.3404 33.2 0.1407 51.4 0.44 141.5 4.5 0.6281 135.1 2.1167 25.4 0.158 52.7 0.4268 137.7 5 0.6189 127.5 1.9576 17.4 0.1779 52.4 0.4206 132 5.5 0.6244 120.8 1.8288 7.7 0.1996 49.9 0.4179 124 6 0.6394 113.5 1.7148 -2.4 0.2085 44.3 0.4245 110.7
Typical Common Source Noise - Parameters @ 3V; 30mA; Zo = 50
f[GHz] 0.9 1.8 2.4 3.0 Fmin [dB] 0.38 0.52 0.56 0.65 Ga [dB] 21.1 16.8 14.0 12.2 Mag (opt ) 0.30 0.39 0.42 0.43 Phase(opt) [deg] 45 125 145 179 Rn/50 0.09 0.08 0.07 0.06
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01.03.2002 WS GS CE GaAs
P - HEMT
Typical Common Source S - Parameters @ 5V; 50mA; Zo = 50
CFH800
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f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.1 0.9304 -23.8 20.5744 162.4 0.0224 99.5 0.4514 -30.4 0.2 0.8794 -34.8 19.5344 155 0.028 78.6 0.4204 -41 0.3 0.8331 -51.1 18.1654 144.2 0.0388 64.1 0.3928 -57.1 0.4 0.7848 -66.2 16.6331 134.5 0.0451 58.3 0.3777 -71.1 0.5 0.7407 -79.4 15.0631 126.5 0.0519 56 0.3613 -83.4 0.6 0.7021 -91.1 13.6278 119.6 0.0564 52.8 0.3467 -94.6 0.7 0.6735 -101.2 12.3385 113.5 0.0602 51.2 0.3358 -104.2 0.8 0.6475 -110.5 11.2236 108.2 0.0638 50 0.3252 -113.1 0.9 0.6272 -118.7 10.2679 103.5 0.0675 50 0.3148 -120.6 1 0.6112 -126.5 9.4523 99.4 0.0712 49.1 0.3054 -128.5 1.1 0.6001 -133.2 8.7468 95.6 0.0735 48 0.296 -135.3 1.2 0.5925 -139.6 8.1191 92 0.0765 48.1 0.2882 -142.2 1.3 0.5881 -144.9 7.5775 88.7 0.0788 47.9 0.2813 -148.2 1.4 0.5854 -150 7.0782 85.6 0.0824 48.2 0.2768 -154.7 1.5 0.5851 -154.6 6.6593 82.4 0.0847 48.2 0.275 -160.4 1.6 0.5855 -159.2 6.2687 79.4 0.0877 48.4 0.2741 -166.6 1.7 0.5877 -163.2 5.921 76.6 0.0891 48.6 0.2766 -172.2 1.8 0.589 -167.1 5.5885 74.1 0.091 48.8 0.2803 -178 1.9 0.5924 -170.9 5.2758 71.4 0.0921 49.1 0.2885 177.1 2 0.5962 -174.4 5.0084 69 0.0953 49.1 0.295 172.2 2.1 0.6024 -177.6 4.7644 66.8 0.0986 48.8 0.3049 168.1 2.2 0.6069 179.6 4.5556 64.6 0.1016 48.9 0.3143 164 2.3 0.6123 176.6 4.351 62.3 0.1045 49.4 0.3278 160.9 2.4 0.6156 174 4.1578 59.8 0.1065 49.6 0.338 158.1 2.5 0.618 171 3.9735 57.7 0.1088 49.4 0.3511 155.9 3 0.6359 160.1 3.238 48.8 0.119 50.2 0.4005 147.7 3.5 0.6397 150.2 2.7451 40.4 0.1285 52.1 0.4286 143.1 4 0.6464 141.4 2.4056 33.1 0.1404 54.1 0.4319 140.4 4.5 0.6341 134.1 2.1792 25.5 0.1573 55.6 0.421 136.8 5 0.6227 126.4 2.0069 17.3 0.1778 55.2 0.4123 131.3 5.5 0.627 120 1.8774 7.7 0.1994 51.8 0.4089 123.4 6 0.6456 112.5 1.7629 -2.4 0.2098 46.9 0.4157 110.2
Typical Common Source Noise - Parameters @ 5V; 50mA; Zo = 50
f[GHz] 0.9 1.8 2.4 3.0 Fmin [dB] 0.44 0.53 0.59 0.69 Ga [dB] 21.3 16.9 14.1 12.3 Mag (opt ) Phase(opt) [deg] 0.32 0.45 0.47 0.44 44 122 144 178 Rn/50 0.08 0.07 0.07 0.06
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01.03.2002 WS GS CE GaAs
P - HEMT
Semiconductor Device Outline SOT343
CFH800
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Pin assignment: 1 = gate 2 = source 3 = drain 4 = source
Published by Infineon Technologies AG, Marketing-Communication, St.-Martin-Strasse 53, D-81541 Munchen. copyright Infineon Technologies AG 2000. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and cirucits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office. Infineon Technologies AG is an approved CECC manufacturer.
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