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| 1 Bit, 10 dB, GaAs Digital Atten 0.02 - 2 GHz Features * CMOS Control Interface * Low Power Consumption uator AT-358 T0-8-2 0.200 TYP (5.08) 0.100 TYP (2.54) (From -55C to +85C) 0.02 - 2.0 GHz 10 dB 0.02 - 2.0 GHz 0.02 - 1.0 GHz 0.02 - 0.5 GHz 0.02 - 0.2 GHz 0.02 - 2.0 GHz 0.02 - 1.0 GHz 0.02 - 0.5 GHz 0.02 - 0.2 GHz 0.02 - 2.0 GHz 0.02 - 1.0 GHz 0.02 - 0.5 GHz 0.02 - 0.2 GHz +/-0.5 dB Max +/-0.3 dB Max +/-0.2 dB Max +/-0.2 dB Max 1.9:1 Max 1.3:1 Max 1.3:1 Max 1.3:1 Max 2.7 dB Max 1.0 dB Max 0.9 dB Max 0.8 dB Max 0.250 MIN (6.35) 0.187 MAX (4.75) Guaranteed Specifications1 Frequency Range Nominal Attenuation 2 Attenuation Accuracy P7 P10 0.400 (10.16) TYP P4 0.200 TYP (5.08) P1 0.60 DIA (15.2 ) VSWR 0.018 0.005 PIN DIA (0.46 0.13) Reference Insertion Loss Operating Characteristics Impedance Switching Characteristics Ton, Toff (50% CTL to 90%/10% RF) Trise, Tfall (10%/90% or 90%/10% RF) Switching Transients (Unfiltered) Input Power for 1 dB Compression 0.5 - 2.0 GHz 0.05 GHz 50 Ohms Nominal 100 ns Typ 40 ns Typ 50 mV Typ +24 dBm Typ +18 dBm Typ Bottom of Case is AC Ground Dimensions in ( ) are in mm. Unless Otherwise Noted: .xxx = 0.010 (.xx = 0.25) .xx = 0.02 (.x = 0.5) Functional Sc +5V hematic (T GND GND op Vie w) Intermodulation Intercept Point (for two-tone input power up to +5 dBm) Intercept Points IP2 IP3 0.5 - 2.0 GHz +58 +38 dBm Typ 0.05 GHz +54 +35 dBm Typ Bias Power Control Voltages Vin Low (0) Vin High (1) +5 VDC @ 1 mA Max 0.0 to 1.5V @ 1A Max 3.5 to 5.0V @ 1A Max GND RF IN GND 10dB GND RF OUT GND 1. All specifications apply with 50 ohm impedance connected to all RF ports, with +5 VDC bias voltage. 2. Above reference insertion loss. 3. Contact the factoy for standard or custom screening requirements. Or dering Inf Model No. AT-358 PIN ormation Package TO-8-2 CI GND GND Truth T C1 0 1 a bl e State Reference Loss Attenuation Specifications Subject to Change Without Notice. V2.01 1-Bit, 10 dB, GaAs Digital Attenuator AT-358 Absolute Maximum Ratings Parameter Max. Input Power 0.05 GHz 0.5 - 2.0 GHz Bias Voltage Control Voltage Operating Temperature Storage Temperature Absolute Maximum1 +27 dBm +32 dBm 0.5 to +7 V -0.5 to V bias + 0.5 V -55C to +125C -65C to +150C 1. Operation of this device above any one of these parameters may cause permanent damage. Typical Performance 0 -0.5 REFERENCE INSERTION LOSS vs FREQUENCY VSWR vs FREQUENCY 2.0 1.8 LOSS STATE LOSS (dB) -1.0 -1.5 VSWR 1.6 1.4 ATTENUATION STATE 1.2 -2.0 -2.5 0.02 0.5 1.0 1.5 2.0 1.0 0.02 0.5 1.0 1.5 2.0 FREQUENCY (GHz) FREQUENCY (GHz) ATTENUATION FLATNESS vs FREQUENCY DEVIATION FROM NOMINAL ATTENUATION (dB) +0.5 +0.25 0 -0.25 -0.5 0.02 0.5 1.0 1.5 2.0 FREQUENCY (GHz) Specifications Subject to Change Without Notice. V2.01 |
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