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| RHRU75120 Data Sheet April 1995 File Number 3408.2 75A, 1200V Hyperfast Diode The RHRU75120 (TA49042) is a hyperfast diode with soft recovery characteristics (tRR < 85ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of high frequency switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns * Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PACKAGING AVAILABILITY PART NUMBER RHRU75120 PACKAGE TO-218 BRAND RHRU75120 Package JEDEC STYLE TO-218 ANODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = +25oC RHRU75120 UNITS V V V A A A W mj oC Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +46oC) Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL (L = 40mH) Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 1200 1200 1200 75 150 500 190 50 -65 to +175 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RHRU75120 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS SYMBOL VF VF IR IR tRR tRR tA tB RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current at (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width. D = duty cycle. IF = 75A IF = 75A VR = 1200V VR = 1200V IF = 1A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s TC = +150oC TC = +150oC TEST CONDITION MIN TYP 60 25 MAX 3.2 2.6 500 2 85 100 0.8 UNITS V V A mA ns ns ns ns oC/W V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt R1 L1 = SELF INDUCTANCE OF R4 + LLOOP Q1 +V1 0 t2 t1 R2 +V3 Q2 t1 5tA(MAX t2 > tRR t3 > 0 L1 tA(MIN) R4 10 LLOOP DUT Q4 0.25 IRM 0 IF dIF dt tRR tA tB t3 C1 0 -V2 R3 Q3 -V4 VRM R4 IRM VR FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 2 RHRU75120 Typical Performance Curves FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 & Q2 ARE 1000V MOSFETs Q1 FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES L R+ VDD 130 1M DUT VAVL 12V Q2 IL 130 CURRENT SENSE VDD IV IL t0 t1 t2 t 12V FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 3 |
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