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| Bulletin I0101J 12/01 IR110BG12DCB PHASE CONTROL THYRISTORS Junction Size: Wafer Size: VRRM Class: Passivation Process: Reference IR Packaged Part: Square 110 mils 4" 1200 V Glassivated MESA 16TTS Series Major Ratings and Characteristics Parameters VTM VRRM IGT VGT IH IL Maximum On-state Voltage Reverse Breakdown Voltage Max. Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current Units 1.4 V 1200 V 60 mA 2V 5 to 100 mA 200 mA Test Conditions TJ = 25C, I T = 10 A TJ = 25C, I RRM = 100 A (1) TJ = 25 C, anode supply = 6 V, resistive load TJ = 25 C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20m) 110 x 110 mils (see drawing) 100 mm, with std. <110> flat 350 m 10 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR110BG12DCB Bulletin I0101J 12/01 Ordering Information Table Device Code IR 1 110 2 B 3 G 4 12 5 D 6 CB 7 1 2 3 4 5 6 7 - International Rectifier Device Chip Dimension in Mils Type of Device: B = Wire Bondable SCR Passivation Process: G = Glassivated MESA Voltage code: Code x 100 = VRRM Metallization: D = Silver (Anode) - Aluminium (Cathode) CB = Probed Uncut Die (wafer in box) None = Probed Die in chip carrier Outline Table All dimensions are in millimeters 2 www.irf.com |
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