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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200201 Issued Date : 1998.01.06 Revised Date : 2002.01.25 Page No. : 1/4 HSC945SP NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC945 is designed for using driver stage of AF amplifier and low speed switching applications. Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipations Total Power Dissipation (Ta=25C) ............................................................................... 250 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage......................................................................................... 60 V VCEO Collector to Emitter Voltage...................................................................................... 50 V VEBO Emitter to Base Voltage.............................................................................................. 5 V IC Collector Current........................................................................................................ 100 mA IB Base Current................................................................................................................ 50 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 60 50 5 50 135 150 Typ. 0.1 Max. 100 100 0.25 600 600 4 Unit V V V nA nA V Test Conditions IC=100uA IC=1mA IE=10uA VCB=60V, IE=0 VEB=5V, IB=0 IC=100mA, IB=10mA VCE=6V, IC=0.1mA VCE=6V, IC=1mA IC=1mA , VCE=10V, f=100MHz IE=0, VCB=10V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz pF Classification of hFE2 Rank Range Q 135-270 P 200-400 K 300-600 HSC945SP HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 VCE(sat) @IC=10IB Spec. No. :HSP200201 Issued Date : 1998.01.06 Revised Date : 2002.01.25 Page No. : 2/4 Saturation Voltage & Collector Current 125 C Saturation Voltage (mV) o hFE 100 75 C o 25 C o 75 C o 125 C o o 25 C hFE @ VCE=6V 100 1 10 100 10 0.1 1 10 100 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 On Voltage & Collector Current 1 25 C o Saturation Voltage (mV) VBE(sat) @ IC=10IB 75 C 125 C o o VBE(sat) @ IC=10IB 100 0.1 1 10 100 On Voltage (mV) 0.1 0.1 1 10 100 Collector Current-IC (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 10 Cutoff Frequency & Collector Current 1000 Cutoff Frequency (MHz).. . Capacitance (Pf) fT @ VCE=5V 100 Cob 1 0.1 1 10 100 10 1 10 100 Reverse Biased Voltage (V) Collector Current (mA) HSC945SP HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200201 Issued Date : 1998.01.06 Revised Date : 2002.01.25 Page No. : 3/4 PD-Ta 300 Power Dissipation-PD (mW) 250 200 150 100 50 0 0 50 100 o 150 200 Ambient Temperature-Ta( C) HSC945SP HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92SP Dimension Spec. No. :HSP200201 Issued Date : 1998.01.06 Revised Date : 2002.01.25 Page No. : 4/4 Style: Pin 1.Emitter 2.Collector 3.Base E 3 A 2 1 B C D F G 3-Lead TO-92SP Plastic Package, HSMC Package Code: SP *: Typical DIM A B C D Inches Min. Max. 0.1450 0.1650 0.1063 0.1300 0.5000 *0.1000 Millimeters Min. Max. 3.70 4.20 2.70 3.30 12.7 *2.54 DIM E F G Inches Min. Max. 0.0160 0.0240 *0.0150 0.0800 0.1050 Millimeters Min. Max. 0.41 0.61 *0.38 2.03 2.67 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSC945SP HSMC Product Specification |
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