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| InGaAs-APD/Preamp Receiver FEATURES * 2.5Gb/s APD Receiver module in an industry standard mini-DIL package * High Sensitivity: -34 dBm (typ.) * High Differential Electrical Output * Power Overload: -4dBm (typ.) * Integral Thermistor and GaAs IC Preamp * Wide operating temperature range (-40 to +85C) FRM5W232BS APPLICATIONS This APD detector preamp is intended to function as an optical receiver in long haul SONET, SDH, and DWDM systems operating up to 2.7Gb/s. The device operates in both the 1,310 and 1,550nm wavelength windows. The nominal 10K integral thermistor allows accurate monitoring of the APD temperature and facilitates the design of the APD bias control circuits. The detector preamplifier is DC coupled and has a differential electrical output. DESCRIPTION The FRM5W232BS incorporates a 30 micron InGaAs Avalanche Photodiode (APD) detector, a GaAs IC transimpedance preamplifier, and a thermistor in a mini-DIL type package. The APD is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd: YAG welding techniques. The BS package is designed for a surface mount PC board assembly. ABSOLUTE MAXIMUM RATINGS (Tc=25C, unless otherwise specified) Parameter Storage Temperature Operating Case Temperature Supply Voltage APD Reverse Voltage APD Reverse Current Note: Since the VB may vary from device to device, VB data is attached to each device for reference. . Symbol Tstg Top VDD VR IR(peak) Ratings -40 to +85 -40 to +85 0 to +4.5 0 to VB (Note) 2 Unit C C V V mA Edition 1.1 June 2002 1 FRM5W232BS InGaAs-APD/Preamp Receiver OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25C, =1,310/1,550nm, VDD=+3.3V unless otherwise specified) Parameter APD Responsivity Symbol R15 R13 APD Breakdown Voltage Temperature Coefficient of VB AC Transimpedance Bandwidth Equivalent Input Noise Current Density VB Zt BW Test Conditions 1,550nm, M=1 1,310nm, M=1 ID=10A (Note 1) AC-coupled, f=100MHz, RL=50 AC-Coupled, RL=50, M=10, -3dBm from 1MHz AC-Coupled, RL=50, Average in 1.8GHz 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at optimum value Ta=25C Ta=-40 to +85C 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at M=3, Ta=-40 to +85C Min. 0.8 0.75 40 0.08 2.2 Limits Typ. 0.85 0.85 50 0.12 2.0 2.5 Max. 65 0.15 Unit A/W A/W V V/C k GHz in - 7.0 8.5 pA Hz Sensitivity Pr - -34.0 -33.0 -33.0 -32.0 dBm dBm Maximum Overload Po -5 -4 - dBm Optical Return Loss ORL 30 - - dB Power Supply Current Power Supply Voltage Thermistor Resistance Thermistor B Constant Note: (1) =VB/Tc ISS VDD Rth B 3.15 9.5 3800 3.3 10 3900 70 3.45 10.5 4000 mA V k K 2 InGaAs-APD/Preamp Receiver Notes FRM5W232BS 3 InGaAs-APD/Preamp Receiver "BS" PACKAGE 0.90.1 4.10.2 0.30.05 FRM5W232BS Detail of Lead UNIT: mm 0.500.15 (0.5) (R 0. 7) 0~10 L 1.20.07 24.12.0 Pin Description 7.620.2 (#1) (#8) (#4) (#5) Top View 1. VPD 2. GROUND 3. DATA 4. GROUND 5. THERMISTOR 6. -DATA 7. GROUND 8. VDD 11.370.15 7.370.15 5.2MAX. (0.5) (2.0) 0.40.05 (P2.54x3) Note The fiber length (L) shall be specified in the detail (individual) specification. Unit: mm 9.770.15 See Lead Detail For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0302M200 4 |
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