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FLK057WG
X, Ku Band Power GaAs FET FEATURES
* * * * * High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: add = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK057WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 3.75 -65 to +175 175 Unit V V W C C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should not exceed 145C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Thermal Resistance CASE STYLE: WG Symbol IDSS gm Vp VGSO P1dB G1dB add P1dB G1dB add Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS =125mA VDS = 5V, IDS =10mA IGS = -10A VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 14.5 GHz Min. -1.0 -5 26.0 6.0 Channel to Case Limit Typ. Max. 200 100 -2.0 27.0 7.0 32 27 8 34 20 300 -3.5 40 Unit mA mS V V dBm dB % dBm dB % C/W
VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12 GHz
G.C.P.: Gain Compression Point
Edition 1.2 August 1999
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FLK057WG
X, Ku Band Power GaAs FET
POWER DERATING CURVE 4 Total Power Dissipation (W) 200 Drain Current (mA) 3 150 100 50 VGS =0V -0.5V -1.0V -1.5V -2.0V 0 50 100 150 200 0 2 4 6 8 10 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
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1
Case Temperature (C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
f = 14.5GHz IDS 0.6 IDSS VDS=10V VDS=8.5V
Pout
P1dB & add vs. VDS
f = 14.5 GHz IDS 0.6 IDSS
Output Power (dBm)
28 P1dB (dBm) 27 26 25 24 23 8 9 10
P1dB add
27 25 23 21 19
add (%)
30 20 10
add
40 20
10 12 14 16 18 20 Input Power (dBm)
Drain-Source Voltage (V)
2
add (%)
40
FLK057WG
X, Ku Band Power GaAs FET
S11 S22 SCALE FOR |S12| +j100
+j50 +j25
16GHz 15 9 14 8 13
+90
S21 S12
.08 .06 .04 .02 .04 8 .08 8 1.2 1.6
10
11 12 13
+j250
+j10
16GHz
0
12
10 10 9
25
50 14
100
250
180
15
0
11 16GHz 15
SCALE FOR |S21|
9 10 10 13 11 12 13 14 12 9 11
-j10
14 8
-j250
16GHz
-j25 -j50
-j100
15
-90
FREQUENCY (MHZ)
500 1000 8000 9000 10000 11000 12000 13000 14000 15000 16000
S11 MAG
.973 .941 .816 .787 .740 .642 .474 .249 .189 .480 .689
ANG
-47.8 -85.1 148.5 139.7 129.3 112.7 86.4 43.8 -83.7 -140.8 -163.9
S-PARAMETERS VDS = 10V, IDS = 120mA S21 S12 MAG ANG MAG ANG
7.249 5.946 1.199 1.125 1.149 1.251 1.346 1.351 1.227 .980 .752 147.9 121.8 -21.6 -35.4 -49.4 -67.7 -91.6 -119.6 -150.6 -179.3 158.6 .016 .026 .033 .037 .045 .058 .075 .089 .095 .093 .092 60.6 38.1 -41.3 -40.9 -40.5 -46.2 -58.5 -75.4 -95.0 -112.5 -125.9
S22 MAG
.545 .519 .745 .773 .796 .819 .845 .868 .878 .868 .840
ANG
-20.3 -38.1 -149.2 -157.3 -163.0 -170.6 178.7 166.3 155.2 148.7 141.4
Download S-Parameters, click here
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FLK057WG
X, Ku Band Power GaAs FET
Case Style "WG" Metal-Ceramic Hermetic Package
2.8 (0.11) 1 2.50.15 (0.098) 1.0 Min. (0.039)
2-O1.60.01 (0.063)
0.10.05 (0.004)
2 3
8.50.2 (0.335)
1.0 Min. (0.039)
0.5 (0.020)
0.80.1 (0.031) 2.5 Max. (0.098)
6.10.1 (0.240)
1. 2. 3. 4.
Gate Source Drain Source
0.6
0.03
Unit: mm(inches)
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200
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