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| BUP 410D IGBT With Antiparallel Diode Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Including fast free-wheel diode Pin 1 G Type BUP 410D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4425-A2 Pin 3 E VCE 600V IC 13A Package TO-220 AB VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 13 8 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 26 16 TC = 25 C TC = 90 C Diode forward current IF 11 TC = 90 C Pulsed diode current, tp = 1 ms IFpuls 72 TC = 25 C Power dissipation Ptot 50 W -55 ... + 150 -55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-12-1996 BUP 410D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 2.5 3.1 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 - V VGE = VCE, IC = 0.35 mA, Tj = 25 C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 6 A, Tj = 25 C VGE = 15 V, IC = 6 A, Tj = 125 C VGE = 15 V, IC = 12 A, Tj = 25 C VGE = 15 V, IC = 12 A, Tj = 125 C Zero gate voltage collector current ICES 80 A nA 100 VCE = 600 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V Semiconductor Group 2 Dec-12-1996 BUP 410D AC Characteristics Transconductance gfs 2 320 40 25 - S pF 430 60 40 VCE = 20 V, IC = 6 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 20 35 ns VCC = 300 V, VGE = 15 V, IC = 6 A RGon = 100 Rise time tr 60 90 VCC = 300 V, VGE = 15 V, IC = 6 A RGon = 100 Turn-off delay time td(off) 175 240 VCC = 300 V, VGE = -15 V, IC = 6 A RGoff = 100 Fall time tf 160 220 VCC = 300 V, VGE = -15 V, IC = 6 A RGoff = 100 Semiconductor Group 3 Dec-12-1996 BUP 410D Free-Wheel Diode Diode forward voltage VF 1.65 - V ns 60 100 100 150 C IF = 10 A, VGE = 0 V, Tj = 25 C Reverse recovery time trr IF = 10 A, VR = -300 V, VGE = 0 V diF/dt = -100 A/s Tj = 25 C Tj = 125 C Reverse recovery charge Qrr IF = 10 A, VR = -300 V, VGE = 0 V diF/dt = -100 A/s Tj = 25 C Tj = 125 C 0.2 0.4 0.37 0.74 Semiconductor Group 4 Dec-12-1996 BUP 410D Power dissipation Ptot = (TC) parameter: Tj 150 C 55 W Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 12 A 10 Ptot 45 40 35 IC 9 8 7 30 6 25 5 20 15 10 5 0 0 20 40 60 80 100 120 C 160 4 3 2 1 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 tp = 1.4s Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 IGBT A K/W IC 10 1 10 s ZthJC 10 0 100 s 10 0 1 ms D = 0.50 10 ms 0.20 10 -1 0.10 0.05 10 -1 DC single pulse 0.02 0.01 10 -2 0 10 10 1 10 2 V 10 3 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 5 Dec-12-1996 BUP 410D Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 12 A 10 17V 15V 13V 11V 9V 7V IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 12 A 10 17V 15V 13V 11V 9V 7V IC 9 8 7 6 5 4 3 2 1 0 0 IC 9 8 7 6 5 4 3 2 1 1 2 3 V 5 0 0 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 12 A 10 IC 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 6 Dec-12-1996 BUP 410D Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 100 10 3 t = f (RG) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, IC = 6 A 10 3 t t ns ns tdoff tdoff 10 2 10 tr tf 2 tf tr tdon tdon 10 1 0 3 6 9 A 15 10 1 0 50 100 150 200 300 IC RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 300 V, VGE = 15 V, RG = 100 1.0 E = f (RG) , inductive load , Tj = 125C par.: VCE = 300V, VGE = 15 V, IC = 6 A 0.5 E mWs E mWs Eoff Eoff 0.6 Eon 0.3 Eon 0.4 0.2 0.2 0.1 0.0 0 3 6 9 A 15 0.0 IC 0 50 100 150 200 300 RG Semiconductor Group 7 Dec-12-1996 BUP 410D Typ. gate charge VGE = (QGate) parameter: IC puls = 6 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 C 100 V 300 V 10 0 Ciss 10 -1 6 4 2 0 0 10 -2 0 Coss Crss 4 8 12 16 20 26 5 10 15 20 25 30 QGate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 50 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc/IC(90C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0 100 200 300 400 500 600 V 800 VCE 0.0 0 100 200 300 400 500 600 V 800 VCE Semiconductor Group 8 Dec-12-1996 BUP 410D Typ. forward characteristics IF = f (VF) parameter: Tj 16 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 Diode A K/W IF 12 ZthJC 10 0 10 Tj=125C Tj=25C 8 D = 0.50 0.20 6 10 -1 0.10 0.05 4 single pulse 2 0 0.0 10 -2 -5 10 0.02 0.01 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 9 Dec-12-1996 |
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