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Transistor
2SC2778
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
2.8 -0.3
+0.2
s Features
q
+0.2
0.650.15
+0.25 1.5 -0.05
0.650.15
1.90.2
q
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25C)
Ratings 30 20 5 30 200 150 -55 ~ +150 Unit V V V mA mW C C
1.1 -0.1
1:Base 2:Emitter 3:Collector
JEDEC:TO-236 EIAJ:SC-59 Mini Type Package
Marking symbol : K
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Transition frequency Common emitter reverse transfer capacitance
(Ta=25C)
Symbol VCBO VCEO VEBO hFE fT Cre
*
Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 1mA VCB = 10V, IE = -1mA, f = 200MHz VCE = 10V, IC = 1mA, f = 10.7MHz
min 30 20 5 70 150
typ
0 to 0.1
0.1 to 0.3 0.40.2
0.8
max
0.16 -0.06
+0.2
+0.1
0.4 -0.05
Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.95
2.9 -0.05
1
0.95
3
+0.1
1.45
Unit V V V
250 230 1.3 MHz pF
*h
FE
Rank classification
Rank hFE B 70 ~ 160 KB C 110 ~ 250 KC
Marking Symbol
1
Transistor
PC -- Ta
240 12 Ta=25C 200 10 IB=100A 80A 8 60A 6 40A 10
2SC2778
IC -- VCE
12 VCE=10V Ta=25C
IC -- I B
Collector power dissipation PC (mW)
Collector current IC (mA)
160
Collector current IC (mA)
18
8
120
6
80
4
4
40
2
20A
2
0 0 20 40 60 80 100 120 140 160
0 0 6 12
0 0 60 120 180
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (A)
IC -- VBE
Collector to emitter saturation voltage VCE(sat) (V)
60 VCE=10V 50 100 30 10 3 1 0.3
VCE(sat) -- IC
IC/IB=10 300
hFE -- IC
VCE=10V
Forward current transfer ratio hFE
250 Ta=75C 200 25C 150 -25C 100
Collector current IC (mA)
40 25C 30 Ta=75C 20 -25C
Ta=75C 25C
0.1 -25C 0.03 0.01 0.1
10
50
0 0 0.4 0.8 1.2 1.6 2.0
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
fT -- IE
600 Ta=25C 80
Zrb -- IE
Common emitter reverse transfer capacitance Cre (pF)
2.4
Cre -- VCE
f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C
Reverse transfer impedance Zrb ()
Transition frequency fT (MHz)
70 60 50 40 30 20 10 0 - 0.1 VCB=6V 10V
500
2.0
400 VCB=10V 6V 200
1.6
300
1.2
0.8
100
0.4
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
- 0.3
-1
-3
-10
0 0.1
0.3
1
3
10
30
100
Emitter current IE (mA)
Emitter current IE (mA)
Collector to emitter voltage VCE (V)
2
Transistor
Cob -- VCB
3.2 12 yie=gie+jbie VCE=10V
2SC2778
bie -- gie
0
bre -- gre
Reverse transfer susceptance bre (mS)
yre=gre+jbre VCE=10V f=0.45MHz 10.7 25
Collector output capacitance Cob (pF)
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 1 3 10
IE=0 f=1MHz Ta=25C
Input susceptance bie (mS)
10
100
- 0.5
8
58
-1.0 - 0.4mA -1.5 -1mA -2mA
58
6
25 10.7 IE=- 0.1mA -1mA -2mA -4mA -7mA f=0.45MHz
4
-2.0
-4mA -2.5
2
100
IE=-7mA -3.0 - 0.5
0 30 100 0 4 8 12 16 20
- 0.4
- 0.3
- 0.2
- 0.1
0
Collector to base voltage VCB (V)
Input conductance gie (mS)
Reverse transfer conductance gre (mS)
bfe -- gfe
0
boe -- goe
1.2
f=0.45MHz 10.7
Forward transfer susceptance bfe (mS)
- 0.4mA
- 0.1mA
0.45 10.7
25 -1mA 100 58 -2mA 25 58
-20
Output susceptance boe (mS)
100 1.0 -7mA -4mA -2mA -1mA - 0.4mA 25 0.4 10.7 0.2 f=0.45MHz 0 0.2 0.4 0.6 yoe=goe+jboe VCE=10V 0.8 1.0 IE=- 0.1mA
100 100
-4mA 10.7
-40
100 58 25
0.8 58 0.6
-60
58 IE=-7mA
-80
-100 yfe=gfe+jbfe VCE=10V
-120 0 20 40 60 80 100
0
Forward transfer conductance
gfe (mS)
Output conductance goe (mS)
3
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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