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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. KTA1535T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Adoption of MBIT Processes. High Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall-Sized Package permitting applied sets to be made small and slim. High Allowable Power Dissipation. Complementary to KTC3535T C L G High Speed Switching. 1 E F G H I J K L H J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 ) RATING -20 -20 -5 -3 -5 600 0.9 150 -55 150 UNIT V V V A mA W J 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=-12V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-1.5A, IB=-30mA IC=-1.5A, IB=-30mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, f=1MHz PW=20s DC < 1% = IB1 I B2 1k 50 VR 220F 470F VCC =-5V RL OUTPUT MIN. -20 -20 -5 200 - Storage Time tstg Fall Time tf V BE =5V -20IB1=20IB2=IC =-1.5A 2001. 6. 28 Revision No : 0 I TSM SD TYP. -130 -0.85 160 45 30 MAX. -0.1 -0.1 -165 -1.2 560 MHz pF UNIT A A V V V mV V - 90 - nS - 10 - 1/3 KTA1535T I C - V CE -2.0 COLLECTOR CURRENT I C (A) mA I C - V CE COLLECTOR CURRENT I C (mA) -12mA -10mA -8mA -6mA -4mA -2mA IB=0mA -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -14mA -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 0 -1 -2 -3 -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -1 6 -0.2mA -0.1mA IB=0mA -0.2 -0.4 -0.6 -0.8 -1.0 -4 -5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1K DC CURRENT GAIN h FE 500 300 VCE =-2V VCE(sat) - I C -0.5 -0.3 I C /I B =20 -0.1 -0.05 -0.03 100 50 30 -0.01 -0.03 -0.1 -0.3 -1 -3 -0.01 -0.005 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1 -0.5 -0.3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =50 VBE(sat) - I C -10 -5 -3 I C /I B =50 -0.1 -0.05 -0.03 -1 -0.5 -0.3 -0.01 -0.01 -0.03 -0.1 -0.3 -1 -3 -0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 2001. 6. 28 Revision No : 0 2/3 KTA1535T I C - V BE TRANSITION FREQUENCY f T (MHz) -3.5 COLLECTOR CURRENT I C (A) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VCE =-2V fT - IC 1K 500 300 VCE =-2V 100 50 30 -0.01 -0.03 -0.1 -0.3 -1 -3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (A) C ob - V CB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 1K 500 300 -10 f=1MHz SAFE OPERATING AREA -5 COLLECTOR CURRENT I C (A) -3 -1 -0.5 -0.3 -0.1 -0.05 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) I C MAX (CONTINUOUS) DC OP ER I C MAX.(PULSED) 10 S* 0 50 S* 1m 10 AT mS 0m * S* 100 50 30 IO N 10 -1 -3 -5 -10 -30 COLLECTOR-BASE VOLTAGE VCB (V) -0.02 -0.2 -1 -3 -10 -20 COLLECTOR-EMITTER VOLTAGE V CE (V) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2001. 6. 28 Revision No : 0 3/3 |
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