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E2Q0026-38-72 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1283
electronic components KGF1283
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1283, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET that features high efficiency, high output power, and high gain. The KGF1283 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 26.5 dBm), high gain, and plastic package, the KGF1283 is ideal as a transmitter-driver amplifier for personal handy phones.
FEATURES
* High output power: 26.5 dBm (min.) * High efficiency: 60% (typ.) * High linear gain: 17 dB (typ.) * Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.50.1 1.6 +0.15 -0.10 1.50.1
2.50.1 10.2
40.2
0.48 +0.08 -0.05 0.4 +0.08 -0.05 1.50.1 1.50.1 30.1 0.4
+0.08 -0.05
0.390.05
Package material Lead frame material Pin treatment Solder plate thickness
Epoxy resin Cu Solder plating 5 mm or more
(Unit: mm)
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KGF1283
MARKING
(1)
D1 XX
PRODUCT TYPE
(2) LOT NUMBER (NUMERICAL or ALPHABETICAL)
(3)
(1) Gate (2) Source (3) Drain
CIRCUIT
Drain(3)
Gate(1)
Source(2)
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KGF1283
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = Tc = 25C -- -- Unit V V A W C C Min. -- -6.0 -- -- -- -45 Max. 10 0.4 0.8 2.5 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Output power Drain efficiency Linear gain Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD GLIN Rth Condition VGS = -6 V VGD = -16 V VDS = 10 V, VGS = -6 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 1.4 mA (*1), PIN = 15 dBm (*1), PIN = 15 dBm (*1), PIN = -5 dBm Channel to case Unit mA mA mA mA V dBm % dB C/W Min. -- -- -- 450 -3.0 26.5 50 -- -- Typ. -- -- -- -- -- 27.5 60 17.0 35 Max. 50 150 500 -- -2.0 -- -- -- --
*1 Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 70 mA
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KGF1283
RF CHARACTERISTICS
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Typical S Parameters
VDS = 5.8 V, VGS = -1.71 V, IDS = 70 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.928 0.913 0.902 0.892 0.882 0.876 0.868 0.861 0.854 0.846 0.842 0.835 0.832 0.819 0.818 0.808 0.803 0.795 0.786 0.781 0.773 0.766 0.760 0.751 0.745 0.742 -75.55 -86.65 -96.40 -105.12 -112.97 -119.78 -126.19 -131.83 -137.11 -141.95 -146.44 -150.81 -155.00 -158.72 -162.30 -166.12 -169.41 -172.93 -176.05 -179.23 177.57 174.58 171.51 168.56 165.87 162.94 6.052 5.575 5.152 4.788 4.454 4.153 3.895 3.657 3.464 3.268 3.107 2.959 2.816 2.701 2.571 2.487 2.375 2.297 2.200 2.119 2.061 1.982 1.924 1.861 1.785 1.742 128.22 121.14 114.59 108.53 103.41 98.19 93.46 89.01 84.72 80.66 76.72 73.04 69.53 65.53 62.36 58.83 55.18 52.11 48.43 45.83 42.29 39.28 36.07 32.88 30.00 27.08 0.041 0.045 0.049 0.053 0.056 0.058 0.060 0.063 0.064 0.066 0.067 0.069 0.070 0.071 0.073 0.073 0.075 0.076 0.077 0.078 0.079 0.080 0.082 0.082 0.084 0.084 53.15 48.09 43.65 40.10 36.55 33.64 31.03 28.58 26.57 24.29 22.61 20.63 19.19 17.77 15.95 15.15 13.37 12.15 10.98 9.29 8.86 7.26 5.97 4.70 2.97 2.19 0.216 0.238 0.256 0.271 0.283 0.292 0.299 0.306 0.311 0.315 0.318 0.320 0.323 0.325 0.324 0.327 0.326 0.328 0.327 0.328 0.328 0.327 0.326 0.327 0.328 0.329 -140.73 -143.48 -146.18 -148.79 -150.77 -153.12 -154.81 -156.91 -158.46 -159.96 -161.51 -163.03 -164.39 -165.64 -167.18 -168.37 -169.82 -171.17 -172.30 -173.76 -175.26 -176.65 -177.97 -179.20 179.36 177.71
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Typical S Parameters
VDS = 5.8 V, VGS = -1.71 V, IDS = 70 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
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Test Circuit and Bias Configuration for KGF1283 at 850 MHz
VGS
CF
CB
CB
CF
VDS
RFC IN CC C1
T1
T2
(1) (2)
(3)
T3
T4
RFC OUT CC
C2
C3
f = 850 MHz T1: Z0 = 80 W, E = 7.3 deg T2: Z0 = 80 W, E = 36.6 deg
T3: Z0 = 50 W, E = 27.0 deg T4: Z0 = 50 W, E = 18.0 deg
C1 = 1.0 pF, C2 = 5.0 pF, C3 = 1.0 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 200 nH
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