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| PD -94064 IRF7726 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel VDSS -30V RDS(on) max 0.026@VGS = -10V 0.040@VGS = -4.5V ID -7.0A -6.0A Description HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. S 1 8 7 A D D D D S S G 2 3 6 4 5 T op V ie w MICRO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -7.0 -5.7 -28 1.79 1.14 0.01 20 -55 to +150 Units V A W W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 70 Units C/W www.irf.com 1 12/21/00 IRF7726 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 --- --- --- -1.0 10 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.016 --- --- --- --- --- --- --- --- 46 8.0 8.1 15 25 227 107 2204 341 220 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.026 VGS = -10V, ID = -7.0A 0.040 VGS = -4.5V, ID = -6.0A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -7.0A -15 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 69 ID = -7.0A --- nC VDS = -15V --- VGS = -10V 23 VDD = -15V, VGS = -10V 38 ID = -1.0A ns 341 RG = 6.0 161 RD = 15 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 35 32 -1.8 A -28 -1.2 53 48 V ns C Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.8A, VGS = 0V TJ = 25C, I F = -1.8A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t < 10 sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7726 100 VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP 100 VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP -ID, Drain-to-Source Current (A) 10 -ID, Drain-to-Source Current (A) 10 1 -2.5V 0.1 -2.5V 1 20s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 0.1 0.1 1 20s PULSE WIDTH Tj = 150C 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -7.0A -I D , Drain-to-Source Current (A) 10 TJ = 150 C 1.5 1.0 1 TJ = 25 C 0.5 0.1 2.0 V DS = -15V 20s PULSE WIDTH 5.0 3.0 4.0 6.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7726 3200 2800 -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 1 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 16 14 12 10 8 6 4 2 0 ID = -7.0A V DS =-24V V DS =-15V Ciss C oss C rss 10 100 0 10 20 30 40 50 60 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) TJ = 25 C OPERATION IN THIS AREA LIMITED BY R DS(on) 10 -ID , Drain Current (A) I TJ = 150 C 100us 10 1 1ms 0.1 0.0 V GS = 0 V 1.5 3.0 4.5 6.0 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7726 8.0 VDS VGS RD -ID , Drain Current (A) 6.0 D.U.T. + 4.0 VGS Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 10 100 1000 PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - RG VDD 5 IRF7726 RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance ) 0.070 0.120 0.060 0.050 0.080 0.040 ID = -7.0A 0.030 VGS = -4.5V 0.040 VGS = -10V 0.020 0.010 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.000 0 10 20 30 40 50 60 -ID , Drain Current ( A ) -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F QGS VG QGD VGS -3mA IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + 10 V D.U.T. - VDS IRF7726 2.4 150 120 2.1 -VGS(th) ( V ) Power (W) 150 ID = -250A 1.8 90 60 1.5 30 1.2 -75 -50 -25 0 25 50 75 100 125 0 0.001 0.010 0.100 1.000 10.000 100.000 TJ , Temperature ( C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7726 Package Outline Micro-8 Outline Dimensions are shown in millimeters (inches) L E A D A S S IG N M E N T S D -B3 DDDD 8765 3 E -A1234 SSSG S1 G 1 S2 G 2 8765 H 0 .2 5 (.0 1 0 ) M A M S IN G L E 1234 DUAL 1234 D1 D1 D2 D2 8765 D IM A A1 B C D e e1 E H L IN C H E S M IN .0 3 6 .0 0 4 .0 1 0 .0 0 5 .1 1 6 M AX .0 4 4 .0 0 8 .0 1 4 .0 0 7 .1 2 0 M IL L IM E T E R S M IN 0 .9 1 0 .1 0 0 .2 5 0 .1 3 2 .9 5 MAX 1 .1 1 0 .2 0 0 .3 6 0.18 3.05 .0 2 5 6 B A S IC .0 1 2 8 B A S IC .1 1 6 .1 8 8 .0 1 6 0 .1 2 0 .1 9 8 .0 2 6 6 0 .6 5 B A S IC 0 .3 3 B A S IC 2 .9 5 4 .7 8 0 .4 1 0 3 .0 5 5 .0 3 0 .6 6 6 e 6X e1 A -CB 8X 0 .0 8 (.0 0 3 ) M A1 C AS B S 0 .1 0 (.0 0 4 ) L 8X C 8X R E C O M M E N D E D F O O T P R IN T 1 .0 4 ( .0 4 1 ) 8X 0 .3 8 8X ( .0 1 5 ) 3 .2 0 ( .1 2 6 ) 4 .2 4 5 .2 8 ( .1 6 7 ) ( .2 0 8 ) N O TE S : 1 D IM E N S IO N IN G A N D TO L E R A N C IN G P E R A N S I Y 14 .5M -1 982 . 2 C O N TR O LL IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S D O N O T IN C LU D E M O LD F L AS H . 0 .6 5 6 X ( .02 5 6 ) Part Marking Information Micro-8 D A T E C O D E (YW W ) A Y = LA ST D IG IT O F YEA R W W = W EE K EX AM PLE : T H IS IS A N IR F 7501 45 1 75 01 P AR T N U M B ER TOP 8 www.irf.com IRF7726 Tape & Reel Information Micro-8 Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N O TE S : 1 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -541. 2 . CO N TR O LL IN G D IM E N SIO N : M ILL IM E TE R . 3 3 0 .0 0 ( 1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the commercial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00 www.irf.com 9 |
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