 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SPICE Device Model SI7423DN Vishay Siliconix P-Channel 30-V (D-S) MOSFET CHARACTERISTICS * P-Channel Vertical DMOS * Macro Model (Subcircuit Model) * Level 3 MOS * Apply for both Linear and Switching Application * Accurate over the -55 to 125C Temperature Range * Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 72636 24-May-04 www.vishay.com 1 SPICE Device Model SI7423DN Vishay Siliconix SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current b Symbol Test Conditions Simulated Data 1.8 60 0.014 0.023 29 -0.83 Measured Data Unit VGS(th) ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 A VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -11.7 A VGS = -4.5 V, ID = -9 A VDS = -15 V, ID = -11.7 A IS = -3.2 A, VGS = 0 V V A 0.014 0.023 29 -0.76 S V Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = -15 V, RL = 15 ID -1 A, VGEN = -10 V, RG = 6 VDS = -15 V, VGS = -10 V, ID = -11.7 A 34 5.8 9.6 15 11 72 25 37.5 5.8 9.6 11 10 74 50 ns nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2%. www.vishay.com 2 Document Number: 72636 24-May-04 SPICE Device Model SI7423DN Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25C UNLESS OTHERWISE NOTED) Document Number: 72636 24-May-04 www.vishay.com 3 |
Price & Availability of SI7423DN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |