View NE5520379A-T1A_289263.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET
FEATURES
* LOW COST PLASTIC SURFACE MOUNT PACKAGE * HIGH OUTPUT POWER: +35.5 dBm TYP * HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
5.7 Max 0.6 - 0.15
4.2 Max
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
1.5 - 0.2
Source Source Gate Drain
0.8 - 0.15 4.4 Max
* CLASS AB OPERATION * SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX * TAPE & REEL PACKAGE OPTION AVAILABLE
0.9 - 0.2
0.4 - 0.15 5.7 Max 0.8 Max 3.6 - 0.2
A
* SINGLE SUPPLY: 2.4 to 7.5 V
DESCRIPTION
The NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz AT 3.2 V or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.
APPLICATIONS
* DIGITAL CELLULAR PHONES: 3.2 V GSM900/DCS 1800 Class 4 Handsets * ANALOG CELLULAR PHONES: 2.4 V AMPS Handsets * OTHERS: 3.0 V Two-Way Pagers Retail Business Radio Special Mobile Radio
ELECTRICAL CHARACTERISTICS (TA
PART NUMBER PACKAGE OUTLINE SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain (at PIN = +10 dBm) Drain Efficiency Power Added Efficiency Operating Drain Current Output Power Linear Gain (at PIN = +10 dBm) Drain Efficiency Power Added Efficiency Gate-to-Source Leakage Current Drain-to-Source Leakage Current Gate Threshold Voltage Transconductance Drain-to-Source On Resistance Drain-to-Source Breakdown Voltage Thermal Resistance
= 25C) NE5520379A 79A UNITS dBm dB % % A dBm dB % % nA nA V S V C/W 15 1.0 1.35 2.5 0.12 20 5 0.15 29 31.0 MIN TYP 35.5 16.0 68 65 1.5 33.0 8.5 38 35 100 100 2.0 VGSS = 5.0 V VDSS = 6.0 V VDS = 3.5 V, IDS = 1 mA VDS = 3.5 V, IDS1 = 0.8 A, IDS2 = 1.0 A VGS = 6.0 V, VDS = 0.5 V IDSS = 10 A Channel-to-Case f = 1785 MHz, VDS = 3.2 V, VGS = 2.5 V PIN = 25 dBm (NOTE 1) MAX TEST CONDITIONS f = 915 MHz, VDS = 3.2 V, VGS = 2.5 V(RF OFF) PIN = 25 dBm (NOTE 1)
Functional Characteristics
D ADD
ID POUT GL
D ADD
IGSS
Electrical DC Characteristics
IDSS VTH gm RDS(ON) BVDSS RTH
Note: 1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples.
California Eastern Laboratories
0.2 - 0.1
1.0 Max
1.2 Max
* HIGH POWER ADDED EFFICIENCY: 65% TYP @ VDS = 3.2 V, f = 915 MHz
3
Gate
Drain
NE5520379A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C)
SYMBOLS VDS VGS ID ID PIN PT TCH TOP TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current (Pulse Test)2 Input Power3 Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature UNITS V V A A dBm W C C C RATINGS 8.5 6 2.0 3.0 30 20 125 -30 to +85 -55 to +125
RECOMMENDED OPERATING LIMITS
SYMBOLS VDS VGS IDS PIN TCH GCOMP PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Channel Temperature Gain Compression UNITS V V A dBm C dB TYP 3.2 2.5 1.5 25 MAX 7.5 3.0 2.0 26 125 6.0
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1 ms. 3. Freq = 900 MHz, VDS = 3.5 V.
ORDERING INFORMATION
PART NUMBER NE5520379A-T1A QTY 5 K/Reel
TYPICAL PERFORMANCE CURVES
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
10
(TA = 25C)
DRAIN CURRENT vs. DRAIN VOLTAGE
VGS = +2.425 1.00 +2.350 +2.275
Total Power Dissipation, PD (W)
8
Drain Current, ID (A)
0.8
+2.200 +2.125 +2.050
6 RTH = 5 C/W 4
0.6
0.4
+1.975 +1.900
2
0.2
+1.825 +1.750 +1.675 +1.600 0.000 0 2 4 6 8
0 0 50
75 C
100
150
0
Case Temperature, TC (C)
Drain Voltage, VD (V)
TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE
2.00 1.00
Transconductance, GM (ms)
1.6
1.2
0.8
0.4
0 1.00 1.4 1.8 2.2
0.00 2.50
Gate Voltage, VG (V)
Drain Current, ID (A)
NE5520379A TYPICAL SCATTERING PARAMETERS (TA = 25C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50 j25 j100
90 120 60
150
j10
30
0
10
25
50
100
0
180
0
-j10
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz VD = 2.4 V, ID = 300 mA
-150
-30
-120 -90
-60
NE5520379A VD = 2.4 V, ID = 300 mA
FREQUENCY GHz 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 4.00 Note: 1. Gain Calculation:
MAG = |S21| |S12|
S11 MAG 0.91 0.91 0.91 0.91 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.93 0.93 0.93 0.94 0.94 0.94 0.95 0.95 0.95 0.95 0.95 0.96 0.96 0.96 0.96 0.96 0.96 0.96 0.97 0.97 0.97 0.97 0.97 0.97 0.97 0.98 0.98 0.98 0.98 0.99 ANG -166.00 -171.34 -174.19 -176.05 -177.47 -178.62 -179.56 179.62 178.83 178.12 177.42 176.76 176.09 175.48 174.86 174.22 173.60 173.03 172.43 170.05 168.90 167.71 166.62 165.46 164.33 163.28 162.22 161.21 160.17 159.17 158.29 157.41 156.53 155.72 154.92 154.17 153.44 152.77 152.20 151.52 150.94 150.36 149.78 148.45 MAG 4.96 3.32 2.48 1.98 1.63 1.39 1.20 1.06 0.94 0.85 0.77 0.70 0.64 0.59 0.54 0.50 0.47 0.44 0.41 0.32 0.28 0.25 0.23 0.21 0.19 0.17 0.16 0.14 0.13 0.12 0.11 0.11 0.10 0.09 0.09 0.08 0.08 0.07 0.07 0.06 0.06 0.06 0.05 0.04
S21 ANG 91.46 86.63 82.34 78.94 75.61 72.51 69.74 66.85 64.15 61.50 58.92 56.40 53.87 51.57 49.32 46.99 44.90 42.72 40.69 33.12 29.64 26.30 23.15 20.23 17.61 15.02 12.55 10.37 8.42 6.46 4.59 3.14 1.92 0.69 -0.82 -2.13 -3.31 -4.03 -4.64 -5.69 -5.93 -6.52 -6.88 -5.44 MAG 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.01
S12 ANG 2.83 -3.69 -4.78 -7.98 -9.01 -11.04 -14.40 -16.23 -18.73 -20.26 -19.69 -22.40 -24.70 -26.30 -27.01 -28.40 -29.48 -31.03 -31.65 -35.32 -38.66 -40.07 -40.31 -42.08 -41.45 -41.35 -40.16 -35.50 -30.05 -21.25 -15.26 -1.99 9.51 17.40 49.62 54.56 75.69 84.78 91.22 89.31 94.43 93.75 93.93 93.64 MAG 0.87 0.87 0.87 0.87 0.87 0.87 0.88 0.88 0.88 0.88 0.88 0.89 0.89 0.89 0.89 0.89 0.90 0.90 0.90 0.91 0.91 0.91 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.93 0.94 0.94 0.95 0.95 0.95 0.95 0.96 0.96 0.97 0.97 0.98 0.98 0.98 0.99
S22 ANG -177.51 -178.85 -179.72 179.68 179.13 178.64 178.26 177.80 177.43 176.97 176.61 176.14 175.63 175.27 174.81 174.31 173.93 173.42 172.99 171.08 170.17 169.12 168.10 167.21 166.35 165.39 164.37 163.55 162.80 161.93 160.98 160.15 159.57 158.86 158.02 157.17 156.56 155.94 155.48 154.37 153.79 153.16 152.45 150.04
K 0.12 0.16 0.24 0.29 0.37 0.44 0.50 0.56 0.63 0.71 0.87 0.86 0.93 1.05 1.12 1.27 1.33 1.44 1.61 2.08 2.43 2.88 3.31 4.05 4.91 5.68 7.09 8.29 11.07 14.89 16.85 18.02 16.22 18.87 17.17 17.91 11.30 12.00 7.64 6.03 4.52 3.50 3.08 1.13
MAG1 (dB) 24.77 22.87 21.67 20.65 19.83 19.13 18.71 18.21 17.79 17.43 17.25 16.77 16.44 14.89 13.95 12.74 12.17 11.53 10.79 8.96 8.10 7.18 6.55 5.86 5.12 4.38 3.84 3.46 2.90 2.19 1.67 1.65 1.49 0.98 0.60 0.80 0.89 0.68 0.86 0.83 1.47 1.69 1.43 4.11
(K -
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE5520379A TYPICAL SCATTERING PARAMETERS (TA = 25C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50 j25 j100
90 120 60
150
j10
30
0
10
25
50
100
0
180
0
-j10
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz VD = 3.0 V, ID = 600 mA
-150
-30
-120 -90
-60
NE5520379A VD = 3.0 V, ID = 600 mA
FREQUENCY GHz 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 4.00 Note: 1. Gain Calculation:
MAG = |S21| |S12|
S11 MAG 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.96 0.96 0.96 0.96 0.96 0.96 0.96 0.96 0.97 0.97 0.97 0.97 0.97 0.97 0.98 0.98 0.98 0.99 ANG -166.51 -171.79 -174.68 -176.58 -178.04 -179.24 179.79 178.92 178.11 177.36 176.64 175.96 175.28 174.66 174.05 173.41 172.80 172.21 171.63 170.41 169.32 168.20 167.05 166.00 164.89 163.80 162.78 161.76 160.78 159.78 158.80 157.95 157.10 156.24 155.45 154.66 153.93 153.22 152.55 152.00 151.33 150.77 150.20 149.63 148.33 MAG 5.08 3.41 2.54 2.03 1.69 1.44 1.25 1.11 0.99 0.89 0.81 0.75 0.69 0.63 0.59 0.55 0.51 0.48 0.45 0.40 0.36 0.32 0.29 0.27 0.24 0.22 0.20 0.19 0.18 0.16 0.15 0.14 0.13 0.12 0.12 0.11 0.10 0.10 0.09 0.09 0.08 0.08 0.07 0.07 0.05
S21 ANG 92.43 88.12 84.33 81.48 78.54 75.97 73.62 71.09 68.88 66.51 64.31 62.14 59.81 57.87 55.81 53.68 51.88 49.77 47.95 44.15 40.82 37.55 34.19 30.96 28.24 25.67 22.92 20.12 17.88 16.09 14.12 12.01 10.33 9.11 7.63 5.72 3.94 2.73 1.96 1.15 -0.21 -0.76 -1.47 -2.27 -2.98 MAG 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.01 0.01
S12 ANG 4.88 -2.92 -2.57 -2.60 -5.09 -7.10 -9.56 -11.04 -12.64 -12.76 -13.34 -14.37 -16.01 -17.13 -16.95 -18.56 -19.71 -19.61 -19.95 -24.20 -23.13 -24.29 -25.78 -25.39 -25.03 -22.37 -20.35 -18.82 -12.65 -5.72 2.28 9.59 16.52 24.13 38.01 48.37 55.62 64.87 69.74 81.95 80.85 86.32 86.22 87.98 88.38 MAG 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.90 0.89 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.91 0.91 0.91 0.91 0.92 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.93 0.94 0.95 0.94 0.94 0.95 0.96 0.96 0.96 0.97 0.97 0.98 0.97 0.98
S22 ANG -178.46 -179.65 179.54 178.98 178.33 177.89 177.44 176.93 176.63 176.06 175.72 175.29 174.68 174.42 173.89 173.39 173.13 172.51 172.16 171.11 170.30 169.48 168.40 167.30 166.57 165.86 164.91 163.74 162.96 162.54 161.73 160.62 159.68 159.46 158.99 158.00 156.90 156.45 156.03 155.48 154.23 153.57 153.08 152.19 149.87
K 0.14 0.15 0.25 0.33 0.39 0.47 0.52 0.59 0.68 0.75 0.93 0.91 1.02 1.14 1.18 1.39 1.40 1.52 1.71 1.93 2.13 2.56 3.14 3.52 4.07 4.72 6.13 7.13 7.85 9.04 11.69 12.90 11.53 10.27 11.45 10.95 10.04 7.62 7.17 6.39 5.03 3.62 3.20 3.09 1.37
MAG1 (dB) 26.14 24.16 23.01 21.95 21.14 20.48 20.03 19.51 19.16 18.72 18.57 18.08 17.03 15.30 14.78 13.45 13.11 12.48 11.68 10.81 10.08 9.13 8.10 7.56 7.05 6.28 5.28 4.85 4.65 4.16 3.15 2.58 2.95 2.98 2.19 1.62 2.00 2.62 2.29 2.11 2.21 3.03 3.00 2.26 3.81
(K -
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE5520379A APPLICATION CIRCUIT (900 MHz)
VG J3 C3 C9 C11 P1 GND VD J4 C2 C8 C10
P.C.B. LAYOUT (Units in mm)
79A PACKAGE
4.0 1.7
C13 RFIN J1
A3
C12 RFOUT J2
C5
C6
R1
C7
C1
Drain
Gate
5.9
1.2
C4
C14
U1
100637
NE55XXX79A-EV
Source Through hole 0.2 x 33
SOURCE
LEAD ON DRAIN IS LARGER
0.5
0.5
0.5 6.1
A3
DRAIN
GATE
Note: Use rosin or other material to prevent solder from penetrating through-holes.
VGG(+2.0 V)
VDD (+3.1 V)
+ 4.7uF 0.1uF 1000pF 100pF
100pF
+ 1000pF 0.1uF 4.7uF
5K 10pF RF Input
NE5520379A 10pF RF Output 18pF
4.7pF
8.2pF
18pF
NE5520379A PARTS LIST
1 4 2 1 2 1 2 1 2 2 2 1 1 1 2 1 TF-100637 MA101J MCR03J512 MCH185A180JK MCH185A4R7CK MCH185A100DK MCH185A8R2DK TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE5520379A 703401 1250-003 2052-5636-02 FD-100637 C2, C3 R1 C4, C7 C14 C1, C5 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB TEST CIRCUIT BLK 2-56 X 3/16 PHILLIPS PAN HEAD CASE 1100 pF CAP MURATA 0603 5.1K OHMS RESISTOR ROHM 0603 18 pF CAP ROHM 0603 4.7 pF CAP ROHM 0603 10 pF CAP ROHM 0603 8.2 pF CAP ROHM CASE B 4.7 uF CAP ATC 0805 .1 uF CAP MURATA 0805 1000 pF CAP MURATA IC NEC, LD-MOS FET GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE NE5520379A-EVAL FAB. DRAWING 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
1.0
NE5520379A TYPICAL APPLICATION CIRCUIT PERFORMANCE
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER f = 900 MHz, 3.0 V
PO = 34.6 dBm
(TA = 25C) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER f = 915 MHz, 3.2 V
PO = 35.1 dBm
Drain Current, IDS (mA)
Drain Current, IDS (mA)
10 5 0
37
2500
40
2500
Efficiency, Power Added Efficiency , ADD (%)
32 POUT 27 ID
2000
35 POUT 30 ID
2000
1500
1500
22 17 ADD
1000
100
25
1000
500
50
20 ADD
500
12
5
10
15
20
25
30
0
0
15 5 10 15 20 25 30
0
Input Power, PIN (dBm)
Input Power, PIN (dBm)
Drain Current, IDS (mA)
35
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER f = 1785 MHz, 3.2 V
2500 PO = 31.7 dBm
SMALL SIGNAL (0 dBm Input) GAIN AND RETURN LOSS
VD = 3 V 20 15 10 5 0 S21 VGG = +2.0 V VDD = +3.1 V IDSQ = 430 mA PIN = 0 dBm
Efficiency, Power Added Efficiency , ADD (%)
1
Output Power, POUT (dBm)
30 POUT
2000
25 ID 20 15 ADD 10 5 10 15 20 25
1500
1000
100
1
-5
1
-10 -15 -20 -25 750 900 S11
S22
500
50
0 30
0
Input Power, PIN (dBm)
Frequency, f (MHz)
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 11/26/2001
Efficiency, Power Added Efficiency , ADD (%)
Output Power, POUT (dBm)
Output Power, POUT (dBm)

▲Up To Search▲

Price & Availability of NE5520379A-T1A

	To Download NE5520379A-T1A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .