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PD - 93841
SMPS MOSFET
IRFBL3703
HEXFET(R) Power MOSFET
Applications l Synchronous Rectification in High Power High Frequency DC/DC Converters
VDSS
30V
RDS(on) max
0.0025
ID
260A
Benefits >1mm lower profile than D2Pak Same footprint as D2Pak Low Gate Impedance to Reduce Switching Losses l Ultra Low On-Resistance l Fully Avalanche Rated
l l l
Super-D2PakTM
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max. 260 180
1000 300 3.8 2.0 20 5.0 -55 to + 175
Units
A W W/C V V/ns C
Typical SMPS Topologies
l
Forward and Bridge Converters with Synchronous Rectification for Telecom and Industrial Applications
Notes through are on page 8
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1
4/5/00
IRFBL3703
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 2.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.028 2.0 2.5 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 2.5 VGS = 10V, ID = 76A m 3.6 VGS = 7.0V, ID = 76A 4.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V Max. Units Conditions --- S VDS = 24V, ID = 76A --- ID = 76A --- nC VDS = 24V --- VGS = 10V, --- VDD = 15V, VGS = 10V --- ID = 76A ns --- RG = 1.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 24V, = 1.0MHz --- VGS = 0V, VDS = 0V to 24V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 150 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 209 62 42 18 123 53 24 8250 3000 290 10360 3060 2590
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
1700 76 30
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Typ.
--- --- Min. Typ. Max. Units --- --- --- --- --- --- 260 A --- 1000 0.8 80 185 1.3 120 275 V ns nC
Max.
0.5 40
Units
C/W
Diode Characteristics
IS
I SM
VSD t rr Q rr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 76A, VGS = 0V TJ = 25C, IF = 76A, V DS = 16V di/dt = 100A/s
2
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IRFBL3703
10000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
1000
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
4.5V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
10 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10000
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 260A
I D , Drain-to-Source Current (A)
1.5
1000
TJ = 25 C TJ = 175 C
1.0
100
0.5
10 4.0
V DS = 15V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFBL3703
14000 12000 20
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
ID = 76A VDS = 24V
16
C, Capacitance (pF)
10000
Ciss
8000 6000
12
8
Coss
4000 2000
4
Crss
0 1 10 100 0 0 40 80 120 160
FOR TEST CIRCUIT SEE FIGURE 13
200 240 280 320
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
TJ = 175 C
I D , Drain Current (A)
100
1000
10us
10
100us
TJ = 25 C
1
100 1ms
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6 2.0 2.4
10 1
TC = 25 C TJ = 175 C Single Pulse
10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFBL3703
300
VDS
LIMITED BY PACKAGE
RD
250
VGS RG
D.U.T.
+
I D , Drain Current (A)
200
-VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
150
100
Fig 10a. Switching Time Test Circuit
VDS 90%
50
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFBL3703
1 5V
6000
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
VDS
L
D R IV E R
5000
ID 31A 54A 76A
4000
RG
20V tp
D .U .T
IA S
+ V - DD
A
3000
0 .0 1
2000
Fig 12a. Unclamped Inductive Test Circuit
1000
0 25 50 75 100 125 150 175
V (B R )D SS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFBL3703
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFET
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7
IRFBL3703
Super-D2PakTM Package Outline
Dimensions are shown in millimeters (inches)
10.9 [.429] 9.9 [.390] 3
4.0 [.157] 3.0 [.119]
MINIMUM RECOMMENDED FOOTPRINT
0.9 [.035] 0.7 [.028]
9.02 [.355] 8.65 [.341]
9.05 [.356]
13.0 [.511] 12.0 [.473]
15.2 [.598] 14.2 [.560] 1 2 1 2X 1.2 [.047] 0.8 [.032] BA 2X 0.9 [.035] 0.7 [.028]
3
9.2 [.362] 9.0 [.355]
9.68 [.381] 15.70 [.618]
2
2.37 [.093] 2X 1.61 [.063]
2.54 [.100]
0.25 [.010]
1.8 [.070] 1.0 [.040]
4
2X 2.55 [.100]
0.15 [.006] 3 S URFACES
NOT ES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONT ROLLING DIMENS ION: MILLIMETER. 4 DIMENSION IS MEASURED AT FULL LEAD WIDT H.
LEAD AS SIGNMENTS MOSFET 1 = GAT E 2 = S OURCE 3 = DRAIN SCHOTT KY / FRED 1 = ANODE 1 2 = ANODE 2 3 = COMMON CATHODE
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 0.6mH
RG = 25, I AS = 76A.
ISD 76A, di/dt 100A/s, VDD V(BR)DSS,
TJ 175C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00
8
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