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| 2SK2075 Silicon N Channel MOS FET Application TO-3P High speed power switching Features * * * * * Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator 2 1 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 30 20 80 20 100 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2075 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A VGS = 10 V * ID = 10 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 10 A VGS = 10 V RL = 3 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.105 10 250 3.0 0.13 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 9 14 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 2400 970 145 30 110 220 95 1.3 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 330 -- ns -------------------------------------------------------------------------------------- 2SK2075 Power vs. Temperature Derating 160 Pch (W) I D (A) 100 30 10 3 1 0.3 120 Channel Dissipation 80 Drain Current Maximum Safe Operation Area 10 10 0 s s PW = 10 m s (1 Operation in sh this area is ot ) limited by R DS(on) 1 m D s C n tio ra pe O c (T = 25 C ) 40 Ta = 25 C 0.1 0 50 100 150 Tc (C) 200 1 Case Temperature 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 50 Pulse Test I D (A) 40 10 V 8V (A) 6V 40 50 Typical Transfer Characteristics V DS = 10 V Pulse Test 30 ID Drain Current 5V 30 Drain Current 20 20 -25 C Tc = 25 C 75 C 10 4.5 V V GS = 4 V 10 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 2SK2075 Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 5 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 0.2 0.1 VGS = 15 V 2 5 10 20 50 Drain Current I D (A) 100 10 V 4 Drain to Source Voltage 3 I D = 20 A 2 10 A 1 5A 0 4 8 12 Gate to Source Voltage 16 20 V GS (V) 0.05 1 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test VGS = 10 V 0.4 100 30 10 3 1 0.3 0.1 0.1 Forward Transfer Admittance vs. Drain Current 0.3 I D = 20 A 0.2 5A 0.1 0 -40 10 A -25 C Tc = 25 C 75 C V DS = 10 V Pulse Test 0.3 1 3 10 30 100 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 2SK2075 Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 1000 200 100 50 Coss 100 20 10 di / dt = 100 A / s V GS = 0, Ta = 25 C Crss VGS = 0 f = 1 MHz 5 0.05 0.1 0.2 0.5 10 20 50 Reverse Drain Current I DR (A) 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) I D = 20 A 400 V DD = 50 V 100 V 200 V VDS V GS (V) 500 VGS 20 500 Switching Characteristics t d(off) Switching Time t (ns) 200 100 50 20 10 5 0.5 1 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 2 5 10 20 Drain Current I D (A) 50 tr t d(on) tf 16 Drain to Source Voltage 300 8 200 4 100 V DD = 200 V 100 V 50 V 20 40 60 80 Gate Charge Qg (nc) 2 0 100 0 Gate to Source Voltage 2SK2075 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test 40 30 20 10 V 5V V GS = 0, -5 V 10 0 0.4 0.8 1.2 1.6 2.0 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK2075 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr |
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