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| PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES * HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP * HIGH SPEED SWITCHING CHARACTERISTICS * NPN COMPLIMENT AVAILABLE: NE68133 * HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz NE97733 33 (SOT 23 STYLE) DESCRIPTION The NE97733 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97733 offers excellent performance and reliability at low cost. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE ICBO IEBO CRE2 PT PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = -8 V, IC = -20 mA Noise Figure at VCE = -8 V, IC = -3 mA Insertion Power Gain at VCE = -8 V, IC = -20 mA, f = 1 GHz Forward Current Gain Ratio at VCE = -8 V, IC = -20 mA Collector Cutoff Current at VCB = -10 V, IE = 0 Emitter Cutoff Current at VBE = -1 V, IC = 0 Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz Total Power Dissipation A A pF mW 0.5 UNITS GHz dB dB 8.0 20 MIN 6.0 NE97733 2SA1977 33 TYP 8.5 1.5 12.0 40 100 -0.1 -0.1 0.1 200 3.0 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE97733 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Junction Temperature Storage Temperature UNITS V V V mA C C RATINGS -20 -12 -50 150 -65 to +200 DC Current Gain, HFE -3 50 40 30 20 100 VCE = -8V DC CURRENT GAIN vs. COLLECTOR CURRENT 10 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 5 4 3 2 1 -0.1 -1.0 -10 -100 -1000 Collector Current, IC (mA) TYPICAL PERFORMANCE CURVES (TA = 25C) DC POWER DERATING CURVES 400 INSERTION GAIN vs. FREQUENCY 35 Total Power Dissipation, PT (mW) Insertion Power Gain, |S21E|2 (dB) FREE AIR 30 25 20 15 10 5 0 -5 -10 -15 0.1 0.2 0.3 0.4 0.5 1.0 VCE = -8 V IC = -20 mA 300 200 NE97733 100 0 0 50 100 150 200 2.0 3.0 Ambient Temperature, TA (C) Frequency, f (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 INSERTION GAIN vs. COLLECTOR CURRENT 15 Gain Bandwidth Product, fT (GHz) VCE = -8 V 8 Insertion Power Gain, |S21E|2 (dB) VCE = -8 V f = 1 GHz 10 6 4 5 2 0 -1 -10 -100 0 -1 -10 100 Collector Current, IC (mA) Collector Current, IC (mA) NE97733 TYPICAL PERFORMANCE CURVES (TA = 25C) DC CURRENT GAIN VS. COLLECTOR CURRENT 100 Collector Feed-back Capacitance, CRE (pF) OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 1.5 f = 1 MHz DC Current Gain, HFE 50 40 30 20 VCE = -3 V VCE = -2 V VCE = -1 V 1 10 0.5 1.0 -0.1 -1.0 -10 -100 -1000 0 -1 -10 -100 Collector Current, IC (mA) Collector to Base Voltage, VCB (V) SWITCHING CHARACTERISTICS Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Vin = 1 V TYP 1.08 0.66 0.32 0.78 Unit ns ns ns ns tON (delay) tr tOFF (delay) tf SWITCHING TIME MEASUREMENT CIRCUIT VCC (-) RC1 VOUT RL1 VIN RS Sampling Oscilloscope RC2 RL2 VIN tON (delay) 20 ns tr tf tOFF (delay) 50 VBB (-) VOUT RE VEE (+) VIN = 1 v, VBB = -0.5 V, RC1 = RC2 RS () 160 RC () 1K RL1 () 200 RL2 () 250 RE () 2.7 K VEE (V) 27 VCC (V) 26.3 NE97733 TYPICAL SCATTERING PARAMETERS (TA = 25C) 0.8 0.6 0.4 3 4 0.2 5 10 20 50 10 20 -50 -20 -10 S22 -0.2 S11 -3 -0.4 -2 -0.6 -0.8 -1 -1.5 -5 -4 1 1.5 2 90 135 S21 45 S12 0.2 0.4 0.6 0.8 1 1.5 2 3 45 180 0.1 0.2 0.3 1.0 2.0 0.4 0.5 0 97733 VCE = -8 V, IC = -3 mA 3.0 225 4.0 315 270 VCE = -1 V, IC = -5 mA FREQUENCY (GHz) 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 MAG 0.428 0.382 0.374 0.387 0.419 0.461 0.502 0.552 0.574 S11 ANG -126.3 -160.6 -175.9 155.1 132.6 114.5 100.2 82.6 74.2 MAG 4.899 3.398 2.813 2.002 1.583 1.323 1.148 0.948 0.859 S21 ANG 100.7 82.8 74.1 56.8 42.6 30.6 21.0 7.0 -4.4 S12 MAG 0.101 0.132 0.154 0.213 0.274 0.336 0.393 0.501 0.599 ANG 52.7 54.1 55.0 54.6 51.3 46.5 40.9 29.4 16.0 S22 MAG 0.417 0.309 0.272 0.230 0.226 0.247 0.270 0.267 0.218 ANG -54.0 -60.2 -64.5 -80.1 -100.1 -119.0 -133.8 -159.3 155.9 K 0.77 0.97 1.04 1.09 1.07 1.04 1.01 0.98 0.98 MAG1 (dB) 16.8 14.1 11.5 7.9 6.0 4.8 4.1 2.8 1.6 VCE = -5 V, IC = -10 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.251 0.213 0.207 0.225 0.265 0.316 0.365 0.428 0.462 -126.4 -159.9 -176.4 151.5 127.7 109.8 96.8 82.3 77.7 7.121 4.739 3.878 2.708 2.116 1.754 1.511 1.218 1.074 99.1 84.5 77.3 62.5 49.8 38.6 28.8 13.5 0.8 0.072 0.107 0.131 0.191 0.252 0.310 0.364 0.467 0.566 67.8 68.2 67.6 64.2 59.4 53.5 47.5 36.4 24.3 0.426 -38.9 0.350 -39.9 0.324 -41.9 0.288 -52.1 0.272 -67.9 0.275 -85.3 0.284 -100.1 0.269 -121.5 0.171 -148.4 0.91 1.00 1.03 1.04 1.03 1.00 0.98 0.95 0.94 19.9 16.0 13.7 10.3 8.2 7.2 6.2 4.2 2.8 VCE = -8 V, IC = -3 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.626 0.447 0.374 0.302 0.310 0.355 0.407 0.428 0.503 -74.0 -111.0 -131.4 -174.7 151.1 125.4 106.9 85.0 74.6 4.205 3.520 3.075 2.293 1.824 1.516 1.301 1.038 0.930 119.4 97.8 87.0 67.2 51.9 39.0 28.4 13.9 3.7 0.088 0.109 0.122 0.157 0.202 0.256 0.314 0.438 0.573 54.6 51.8 52.6 56.0 57.8 56.7 53.7 44.7 32.3 0.673 -32.7 0.558 -38.2 0.512 -41.0 0.451 -49.9 0.427 -62.0 0.425 -76.0 0.433 -89.1 0.425 -110.2 0.328 -133.5 0.56 0.79 0.91 1.05 1.06 1.01 0.96 0.90 0.91 16.8 15.1 14.0 10.2 8.0 7.0 6.2 3.7 2.1 VCE = -8 V, IC = -20 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 Note: 1. Gain Calculation: MAG = |S21| |S12| 0.151 0.140 0.142 0.170 0.215 0.268 0.318 0.379 0.416 -140.9 -172.1 172.1 141.7 119.7 104.0 92.5 80.9 79.2 8.095 5.268 4.288 2.974 2.317 1.918 1.652 1.332 1.169 95.5 83.1 76.7 63.2 51.4 40.7 31.2 15.8 2.6 0.067 0.105 0.129 0.191 0.252 0.309 0.362 0.459 0.552 74.7 73.5 72.2 66.9 60.8 54.6 48.4 36.9 25.3 0.389 -34.1 0.334 -34.1 0.315 -36.1 0.285 -46.2 0.269 -61.6 0.268 -79.2 0.274 -94.3 0.257 -114.2 0.154 -134.6 0.98 1.02 1.03 1.03 1.02 1.00 0.98 0.95 0.94 20.8 16.2 14.1 10.9 8.9 7.9 6.6 4.6 3.3 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE97733 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 OUTLINE 33 RECOMMENDED P.C.B. LAYOUT 2.4 2 2.9 0.2 0.95 1.9 2 +0.10 0.4 -0.05 (ALL LEADS) 3 1.9 0.95 3 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 0.8 1 1.0 1.1 to 1.4 0.8 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 +0.10 0.16 -0.06 ORDERING INFORMATION PART NUMBER NE97733-T1 QUANTITY 3000 PACKAGING Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -7/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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