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PD-95807 RevB
Half-Bridge FredFet and Integrated Driver
Description
IR3101 Series 1.6A, 500V
IR3101 is a gate driver IC integrated half bridge FredFET designed for sub 250W (heat-sink-less) motor drive applications. The sleek and compact single-in-line package is optimized for electronic motor control in appliance applications such as fans and compressors for refrigerators. The IR3101 offers an extremely compact, high performance half-bridge inverter, in a single isolated package for a very simple design for twophase and three-phase motor drivers. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET(R) power FredFET(R) technology (HEXFET(R) with ultra-fast recovery body diode characteristics), enable efficient and rugged single package construction. Propagation delays for the high and low side power FredFETs are matched thanks to the advance IC technology.
Features
* Output power FredFets in half-bridge configuration * High side gate drive designed for bootstrap operation * Bootstrap diode integrated into package. * Lower power level-shifting circuit * Lower di/dt gate drive for better noise immunity * Excellent latch immunity on all inputs and outputs * ESD protection on all leads * Isolation 1500 V RMS min
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation are measured under board mounted and still air conditions.
Parameters Description VDD VB PD RthJC RthJA VISO TJ TS TL IO IO High voltage supply High side floating supply Package power dissipation @ TC 80 C (per die) Thermal resistance, junction to case Thermal resistance, junction to ambient (note 1) Isolation Voltage (1 min) Junction temperature (Power Mosfet) Storage temperature Lead temperature (soldering, 10 seconds) Maximum current rating (note 2) Continuous output current (VIN =5V, VCC=15V) (TC = 100C) (TC = 25C)
o
Max. Values 500 Vo + 25 5.8 12 85 1500 -40 to +150 -40 to +150 300 1.6 1.3 2
Units V V W C/W C/W VRMS C C C A A A
Note 1: under normal operational conditions: both power devices working, no heatsink Note 2: see figure 4, fPWM=20kHz
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IR3101
Internal Electrical Schematic - IR3101
VB 8 11 VDD
VCC HIN LIN VSS
1 2 3 5 IC Driver 9 Vo
6 COM
Figure 1: Internal connections
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions.
Symbol VB VDD VCC VIN VSS
Definition High side floating supply absolute voltage High voltage supply Low side and logic fixed supply voltage Logic input voltage Logic ground
Min. VO + 10 10 VSS -5
Max. VO + 20V 450 20 VCC 5
Units V V V V V
Note 3: Care should be taken to avoid switching condition where the VO node flies inductively below COM by more than 5V
2
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IR3101
MOSFET Characteristics
VBIAS (VCC, VB) = 15V and TA = 25oC unless otherwise specified. The VDD parameter is referenced to COM.
Symbol V(BR)DSS IDSS RDS(on) VSD RDS(on) VSD EON EOFF EREC t RR EON EOFF EREC t RR C oss
Definition Drain-to-Source breakdown voltage Drain-to-Source leakage current Static drain-to-source on resistance Diode forward voltage Static drain-to-source on resistance Diode forward voltage Turn-On energy losses Turn-Off energy losses Body-Diode reverse recovery Llosses Reverse recovery time Turn-On energy losses Turn-Off energy losses Body-Diode reverse recovery Llosses Reverse recovery time Output capacitance
Min. 500 -
Typ 0.8 0.82 1.7 0.70 100 5 10 105 150 10 15 130 -
Max. 50 1.0 0.9 2.0 0.79 135 10 20 180 205 17 35 230 100
Units V
Conditions VIN=0V, ID=250A VDS=500V, VIN =0V ID = 1.5A ID = 1.5A, VIN =0V ID = 1.5A, TJ=125C ID = 1.5A, VIN =0V, TJ=125C IF = 1.5A VCC = 300V di/dt = 200A/s
A
V
V J J J ns J J J ns pF
TJ=125C IF = 1.5A VCC = 300V di/dt = 200A/s VIN=0V, VDD=30V, f=1MHz
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IR3101
Driver IC Characteristic
Symbol VCCUV+ VCCUVVCCUVH VBSUV+ VBSUVVBSUVH VIH VIL IIN+ IINMT Definition VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold VCC supply undervoltage lockout hysteresis VBS supply undervoltage positive going threshold VBS supply undervoltage negative going threshold VBS supply undervoltage lockout hysteresis Logic "1" input voltage for HIN & LIN Logic "0" input voltage for HIN & LIN Logic "1" input bias current Logic "0" input bias current Delay Matching HS & LS turn on/ turn off Min. 8.0 7.4 0.3 8.0 7.4 0.3 2.9 Typ. 8.9 8.2 0.7 8.9 8.2 0.7 5 1 0 Max. 9.8 9.0 9.8 9.0 0.8 20 2 30 Units V V V V V V V V VCC=10V to 20V VCC=10V to 20V HIN, LIN = 5V HIN, LIN = 0V Conditions
A A
ns
VB 8 11
VDD
HIN 0 1 LIN 1 0 1 X VO 0 VDD Shoot-Through condition X
VCC HIN LIN VSS
1 2 3 5 IC Driver 9 Vo
1 X
6 COM
Figure 2: Driver input/output relation
4
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IR3101
Module Pin-Out Description
Pin 1 2 3 4 5 6 7 8 9 10 11 VDD VB VO VSS COM Symbol VCC HIN LIN Lead Definitions Logic and internal gate drive supply Logic input for high side gate output Logic input for low side gate output Not Connected Logic Ground Low side MOSFET gate return Not Connected High side gate drive floating supply Half bridge output Not Connected High voltage supply
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IR3101
Typical Application Connection IR3101
M
V+BUS
IR3101
VB
8
VBUS
11
IR3101
VB
8
VBUS
11
IR3101
VB
8
VBUS
11
VCC HIN LIN VSS
1 2 3 5
VCC IC Driver
9
1 2 3 5
VCC IC Driver
9
1 2 3 6
Vo
HIN LIN VSS
Vo
HIN LIN VSS
IC Driver
9
Vo
6
6 COM COM
6 COM
V BUS
-
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between Vcc-VSS and VB-VO terminals, a capacitor connected between these terminals is recommended and should be located very close to the module pins. Additional high frequency capacitors, typically 0.1F, are strongly recommended. 3. Low inductance shunt resistor should be used for phase leg current sensing. Similarly, the length of the traces from the pin to the corresponding shunt resistor should be kept as small as possible. 4. Value of the bootstrap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a or Figure 8. 5. Application conditions should guarantee minimum dead-time of 200ns
6
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IR3101
3.00 2.50 Maximum output current [A]. 2.00 1.50 1.00 0.50 0.00 0 2 4 6 8 10 12 14 16 18 20 Switching Frequency [kHz]
Figure 3: Maximum phase current as function of switching frequency Trapezoidal modulation, 120 switching, VBUS=300V, Duty Cycle=0.8, without heatsink: Ta=55C, TJ=150C
HS LS IO
Low Side MOSFET High Side MOSFET
3.00 2.50 Maximum output current [A]. 2.00 1.50 1.00 0.50 0.00 0 2 4 6 8 10 12 14 16 18 20 Switching Frequency [kHz]
Figure 4: Maximum phase current as function of switching frequency Trapezoidal modulation, 120 switching,VBUS=300V, Duty Cycle=0.8, with heatsink: TC=100C, TJ=125C
HS LS IO
Low Side MOSFET High Side MOSFET
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IR3101
9.75 8.75 7.75 6.75 Current (A) 5.75 4.75 3.75 2.75 1.75 0.75 -0.25 0.2 0.3 0.4 0.5 0.6 Time (s)
Figure 5. FredFET Turn-on. Typical turn-on waveform @Tj=125C, VBUS=300V
450 Current Voltage 400 350 300 Voltage (V)
Voltage (V)
250 200 150 100 50 0 -50 0.7 0.8 0.9 1
2.25 Current Voltage
450 400 350 300
1.75
Current (A)
1.25
250 200
0.75
150 100
0.25
50 0
-0.25 0 0.1 0.2 0.3 0.4 0.5 Time (s)
Figure 6. FredFET Turn-off. Typical turn-on waveform @Tj=125C, VBUS=300V
-50 0.6 0.7 0.8 0.9 1
8
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IR3101
3.00 Rds(on) , Drain to Source On-Resistance, Normalized 2.50 2.00 1.50 1.00 0.50 0.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (C)
Figure 7: Normalized On-Resistance vs temperature VCC=10V, ID=1.5A
20 17.5 15 Capacitance (F) . 12.5 10 7.5 5 2.5 0 0 5 10 15 Figure 8: Recommended minimum Bootstrap Capacitor value vs Switching Frequency Switching Frequency (kHz)
Figure 8: Recommended minimum bootstrap capacitor value vs switching frequency
15
10 6.8 4.7 3.3 2.2 1.5
20
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IR3101
Package Outline
note 2 28.19 [1.198] -A27.69 [1.090] -B3.68 [.145] 3.18 [.125]
9.14 [0.36] 8.64 [0.34]
IR3101 0204 12.19 [.480] 11.69 [.460]
-C3.55 [.140] 3.05 [.120] note 1 note 3 2.54 [0.10] 10X 11X 1.65 [.065] 1.40 [.055] 11X 0.56 [.022] 0.46 [.018] 1.87 [.074] 1.30 [.051] 0.30 [.012] 0.20 [.008] 0.25 [.10]
0.25 (.10) M C A S B
Note 1: Marking for pin 1 identification Note 2: Product Part Number Note 3: Lot and Date code marking Dimensioning and Tolerancing per ANSY Y14.5M-1992 Controlling Dimensions: INCH Dimensions are shown in millimeters [inches]
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 01/04
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