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| IL221AT/IL222AT/IL223AT FEATURES N EW * High Current Transfer Ratio, IF=1 mA, IL221AT, 100% Minimum IL222AT, 200% Minimum IL223AT, 500% Minimum Withstand Test Voltage, 2500 VACRMS Electrical Specifications Similar to Standard 6 Pin Coupler Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05" Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering Underwriters Lab File #E52744 (Code Letter P) PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER Package Dimensions in Inches (mm) * * * * * * * .120 .005 (3.05 .13) .240 (6.10) Pin One ID .192 .005 (4.88 .13) .004 (.10) .008 (.20) Anode 1 .154 .005 C L (3.91 .13) .016 (.41) .015 .002 (.38.05) .008 (.20) 5 max. .050 (1.27) typ. .040 (1.02) .020 .004 (.15.10) 2 plcs. 40 Cathode 2 NC 3 NC 4 8 NC 7 Base 6 Collector 5 Emitter 7 .058 .005 (1.49 .13) .125 .005 (3.18 .13) R.010 Lead (.25) max. Coplanarity .0015 (.04) max. TOLERANCE: .005 (unless otherwise noted) DESCRIPTION The IL221AT/IL222AT/IL223AT is a high current transfer ratio (CTR) optocoupler with a Gallium Arsenide infrared LED emitter and a silicon NPN photodarlington transistor detector. This device has a CTR tested at an 1 mA LED current. This low drive current permits easy interfacing from CMOS to LSTTL or TTL. This optocoupler is constructed in a standard SOIC8 foot print which makes it ideally suited for high density applications. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. Maximum Ratings Emitter Peak Reverse Voltage ............................................ 6.0 V Continuous Forward Current ............................... 60 mA Power Dissipation at 25C .................................. 90 mW Derate Linearly from 25C ............................ 1.2 mW/C Detector Collector-Emitter Breakdown Voltage ..................... 30 V Emitter-Collector Breakdown Voltage ....................... 5 V Collector-Base Breakdown Voltage ........................ 70 V Power Dissipation ............................................. 150 mW Derate Linearly from 25C ........................... 2.0 mW/C Package Total Package Dissipation at 25C Ambient (LED + Detector) ........................................... 240 mW Derate Linearly from 25C ........................... 3.3 mW/C Storage Temperature ......................... -55C to +150C Operating Temperature ..................... -55C to +100C Soldering Time at 260C .................................... 10 sec. Characteristics (TA=25C) Symbol Min. Typ. Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector-Base Voltage Collector-Emitter Capacitance Package DC Current Transfer Ratio IL221AT IL222AT IL223AT Collector-Emitter Saturation Voltage Isolation Test Voltage Capacitance, Input to Output Resistance, Input to Output VF IR CO 1.0 0.1 25 Max. 1.5 100 Unit V A pF Condition I F =1mA VR=6.0 V VF=0 V, F=1 MHz BVCEO BVECO BV CBO CCE 30 5 70 3.4 V V IC=100 A IE=100 A IC=10 A VCE=10 V IF=1 mA, VCE=5 V pF CTR DC 100 200 500 V CE sat V IO C IO R IO 2500 0.5 100 1 V ICE=0.5 mA, IF=1 mA VAC RMS t=1 sec. pF G Specifications subject to change. Semiconductor Group 4-10 10.95 Figure 1. Forward voltage versus forward current Figure 2. Peak LED current versus duty factor, Tau 1.4 VF - Forward Voltage - V 10000 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Ta = -55C If(pk) - Peak LED Current - mA Duty Factor .005 .01 .02 .05 .1 .2 100 .5 Ta = 25C 1000 t DF = /t = /t Ta = 85C 1 10 IF - Forward Current - mA 100 -6 10 10 10-5 10-4 10-3 10-2 10-1 10 0 10 1 t - LED Pulse Duration - s Figure 3. Normalized CTR CB versus I F 3 Ta = -20C Ta = 25C Ta = 50C Ta =70C Normalized to: If = 1mA, Ta = 25C Vcb = 10V Figure 4. Normalized CTRCE versus LED current 100 Ta = -20C Ta = 25C Ta = 50C Ta = 70C Normalized to: If = 1mA, Vce = 5V Ta = 25C 1 Normalized CTRcb 2 Normalized CTRce 100 10 1 0 .1 1 10 If - LED Current - mA .1 .1 1 10 If - LED Current - mA 100 Figure 5. CTR C B versus LED current 0.10 Figure 6. CTR versus LED current 2000 CTRce - Current Transfer Ratio -% VCB =10 V If/Icb - CTRcb - % 1500 Ta = -20C Ta = 25C Ta = 50C Ta = 70C Vce = 10V 0.05 Ta = -20C Ta = 25C Ta = 50C Ta = 70C 0.00 .1 1 10 If - LED Current - mA 100 1000 500 0 .1 1 10 If - LED Current - mA 100 Semiconductor Group 4-11 y Figure 7. Collector current versus LED current Figure 8. Photocurrent versus LED current 1000 100 Ice - Collector Current - mA Icb - Photocurrent - A 100 Ta -20C Ta Ta = 25C Ta Ta = 50C Ta Ta = 70C Ta = = = = 20C 25C 50C 70C Vce = 10V Vce = 5V 10 Ta Icb-20C Ta Icb 25C Ta Icb 50C Ta Icb 70C = = = = 20C 25C 50C 70C 10 1 1 .1 .1 1 10 If - LED Current - mA 100 .1 1 10 If - LED Current - mA 100 Figure 9. Normalized ICB versus IF 1000 Ta = -20C Ta = 25C Ta = 50C Ta =70C Normalized to: IF = 1mA, Ta =25C Vcb = 10V Figure 10. Switching Timing I F 100 Normalized Icb 10 VO 1 t D t R t PLH VTH =1.5 V t F .1 .1 1 10 If - LED Current - mA 100 t PHL t S Figure 11. Switching schematic VCC =10 V F=10 KHz, DF=50% RL VO I =5 mA F Semiconductor Group 4-12 |
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