 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PNP Silicon Darlington Transistors BSP 60 ... BSP 62 High collector current q Low collector-emitter saturation voltage q Complementary types: BSP 50 ... BSP 52 (NPN) q Type BSP 60 BSP 61 BSP 62 Marking BSP 60 BSP 61 BSP 62 Ordering Code (tape and reel) Q62702-P1166 Q62702-P1167 Q62702-P1168 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Total power dissipation, TS = 124 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCER VCB0 VEB0 IC ICM IB Ptot Tj Tstg Values Unit BSP 60 BSP 61 BSP 62 45 60 60 80 5 1 2 0.1 1.5 150 - 65 ... + 150 W C A 80 90 V 72 17 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BSP 60 ... BSP 62 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage1) IC = 10 mA, RBE = 150 BSP 60 BSP 61 BSP 62 Collector-base breakdown voltage IC = 100 A, IB = 0 BSP 60 BSP 61 BSP 62 Emitter-base breakdown voltage IE = 100 A, IB = 0 Collector-emitter cutoff current VCE = VCERmax, VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA Base-emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz Switching times IC = 500 mA, IB1 = IB2 = 0.5 mA (see diagrams) fT - 200 - MHz V(BR)CER 45 60 80 V(BR)CB0 60 80 90 V(BR)EB0 ICES IEB0 hFE 1000 2000 VCEsat - - VBEsat - - - - 1.9 2.2 - - 1.3 1.8 - - - - V 5 - - - - - - - - - - - - 10 10 - A Values typ. max. Unit V - - - - - - ton toff - - 400 1500 - - ns ns 1) 2) Compare RBE for thermal stability. Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 BSP 60 ... BSP 62 Switching time test circuit Switching time waveform Semiconductor Group 3 BSP 60 ... BSP 62 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy External resistance RBE = f (TA)** VCB = VCE max ** RBE max for thermal stability Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4 BSP 60 ... BSP 62 Collector-emitter saturation voltage IC = f (VCE sat), IB-parameter Base-emitter saturation voltage IC = f (VBE sat), IB-parameter Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Semiconductor Group 5 |
Price & Availability of BSP60
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |