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| Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.70.1 s Features q q q q q 4.20.2 10.00.2 5.50.2 4.20.2 2.70.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 900 900 800 7 2 1 0.3 30 2 150 -55 to +150 Unit V V V V A A A W C C 16.70.3 7.50.2 3.10.1 4.0 1.70.2 Solder Dip 1.30.2 1.050.1 0.80.1 0.5-0.1 2.540.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 14.00.5 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(b) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.5A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A VCE = 10V, IC = 0.05A, f = 1MHz IC = 0.2A, IB1 = 0.04A, IB2 = - 0.04A, VCC = 250V 4 1.0 3.0 1.0 800 6 3 1.5 1.0 V V MHz s s s min typ max 50 50 Unit A A V 1 Power Transistors PC -- Ta 40 1.2 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 1.0 IB=140mA 120mA 100mA 80mA 0.6 60mA 40mA 0.4 20mA 0.2 2SC4004 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 100C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 25C VCE(sat) -- IC Collector power dissipation PC (W) 30 Collector current IC (A) (1) 0.8 20 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=5 1000 VCB=5V 1000 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 0.3 1 3 10 300 10 100 100 3 30 TC=100C -25C 25C 30 1 TC=-25C 25C 100C 10 10 0.3 3 3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 0.1 1 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 1000 100 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=-IB2) VCC=200V TC=25C Area of safe operation (ASO) 10 3 Non repetitive pulse TC=25C ICP IC 10ms 0.3 DC 0.1 0.03 0.01 0.003 0.001 t=1ms Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) 300 10 3 tstg 1 0.3 0.1 0.03 ton tf Collector current IC (A) 0.8 1 100 30 10 3 1 1 3 10 30 100 0.01 0 0.2 0.4 0.6 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 1.6 1.4 Lcoil=100H IC/IB=5 (IB1=-IB2) TC=25C 2SC4004 Reverse bias ASO measuring circuit L coil IB1 T.U.T IC Collector current IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 200 400 600 800 1000 1200 1400 1600 IC Vin -IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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