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(R)
STY16NA90
N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
PRELIMINARY DATA TYPE STY16NA90
s s
V DSS 900 V
R DS(on) < 0.54
ID 16 A
s s s s s s
TYPICAL RDS(on) = 0.5 EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
TM
Max247TM
DESCRIPTION
T he Max247 package is a new high volume power package exibiting the same footprint as the industry standard TO -247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO -264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM (*) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor T stg Tj St orage Temperature Max. Operating Junction Temperature
o
Value 900 900 30 16 10 64 300 2.4 -55 to 150 150
Uni t V V V A A A W W/ C
o o o
C C
(*) Pulse width limited by safe operating area
June 1998
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THERMAL DATA
R t hj-ca se R t hj- amb R thc- si nk Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-Heatsink with Conductive Grease Max Max Typ 0.42 40 0.05
o o
C/W C/W
AVALANCHE CHARACTERISTICS
Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) Max Valu e 16 3000 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A V GS = 0 Min. 900 50 500 100 Typ . Max. Un it V A A nA
V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 30 V
Tc = 125 C
o
ON ()
Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 A ID = 8 A 16 Min. 2.25 Typ . 3 0.5 Max. 3.75 0.54 Un it V A
Static Drain-source On V GS = 10 V Resistance
On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V
DYNAMIC
Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz ID = 8 A VGS = 0 Min. 15 6400 600 150 8300 750 200 Typ . Max. Un it S pF pF pF
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STY16NA90
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 450 V R G = 4.7 V DD = 720 V I D = 16 A ID = 8 A V GS = 10 V V GS = 10 V Min. Typ . 30 30 245 25 110 320 Max. Un it ns ns nC nC nC
SWITCHING OFF
Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 720 V R G = 4.7 I D = 16 A V GS = 10 V Min. Typ . 80 25 115 Max. 105 35 150 Un it ns ns ns
SOURCE DRAIN DIODE
Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 A I SD = 16 A V DD = 100 V V GS = 0 di/dt = 100 A/s o Tj = 150 C 1100 25.3 46 Test Cond ition s Min. Typ . Max. 16 64 2 Un it A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
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Max247 MECHANICAL DATA
mm MIN. A A1 b b1 b2 c D e E L L1 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 TYP. MAX. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 MIN. inch TYP. MAX.
DIM.
P025Q
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STY16NA90
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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