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| S DU/D40N03L S amHop Microelectronics C orp. Augus t , 2002 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S TYP ID 40A R DS (ON) ( m W ) S uper high dense cell design for low R DS (ON). 9 @ V G S = 10V 13 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(D-P AK) S DD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol VDS VGS @ TJ=125 C ID IDM IS PD TJ, TS TG Limit 30 20 40 120 40 50 0.3 -55 to 175 Unit V V A A A W W/ C C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S DU/D40N03L E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS b S ymbol Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID =20A VGS = 4.5V, ID = 10A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A Min Typ Max Unit 30 10 V uA 100 nA 1 1.5 9 13 40 30 1375 670 200 3 10 16 V m ohm m ohm ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance VDD =15V, VGS = 0V f = 1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VDD = 15V, ID =1A, VGS = 10V, R GE N = 6 ohm VDS = 10V,ID = 40A,VGS =10V VDS = 10V,ID = 40A,VGS =4.5V VDS = 10V, ID = 40A, VGS =10V 30 32 132 30 40 50 19.5 23.5 8.2 5.3 ns ns ns ns nC nC nC nC S DU/D40N03L E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is = 25A Min Typ Max Unit 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 40 35 V G S =10,9,8,7,6,5V 30 40 25 C 6 ID, Drain C urrent (A) 25 20 15 10 5 0 0 0.5 1 1.5 2 V G S =4V ID, Drain C urrent (A) 30 T j=125 C 20 10 -55 C 0 0 1 2 3 4 5 6 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 3600 1.3 F igure 2. Trans fer C haracteris tics R DS (ON), Normalized Drain-S ource, On-R es is tance V G S =10V 1.2 1.1 1.0 0.9 0.8 0.7 T j=125 C 25 C -55 C 3000 C , C apacitance (pF ) 2400 1800 C is s 1200 600 0 0 5 10 15 20 25 30 C os s C rs s 0 10 20 30 40 V DS , Drain-to S ource Voltage (V ) ID, Drain C urrent(A) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S DU/D40N03L B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 V DS =10V F igure 6. B reakdown V oltage V ariation with T emperature 40 gFS , T rans conductance (S ) Is , S ource-drain current (A) 50 40 30 20 10 0 0 5 10 15 20 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 300 200 100 N) L im it 10 DC V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 VDS =10V ID=40A 1m 10 0m ms s 10 RD S (O 1s s 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 5 10 15 20 25 30 35 40 1 10 30 60 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S DU/D40N03L V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 |
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