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| YOUDA TRANSISTOR SI NPN TRANSISTOR--D882 DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN CONFIGURATIONS PIN 1 2 3 VALUE 40 30 5 10 1 3 7 0.6 +150 -55+150 D882 SYMBOL Emitter Collector Base UNIT V V V W W A A A ABSOLUTE MAXIMUM RATINGS (Tamb=25) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25 Collector Dissipation PCM Tamb=25 DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg ELECTRICAL CHARACTERISTICS PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance CLASSIFICATION OF hFE RANK RANGE (Tamb=25,all voltage referenced to GND Unless otherwise specified) SYMBOL ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob TEST CONDITIONS VcB=30V, IE=0 VEB=3V, IC=0 VcE=2V, IC=20mA VcE=2V, IC=1A Ic=2A, IB=0.2A Ic=2A, IB=0.2A VcE=5V, IC=0.1A VcB=10V, IE=0,f=1MHz MIN TYP MAX 100 100 UNIT nA nA 30 100 200 400 0.3 1.0 80 45 0.5 2.0 V V MHz pF Q 100200 P 160320 E 200400 WuXi YouDa Electronics Co., Ltd Add: E-3-A6, Li Yuan Economic Development Zone,Wuxi Jiangsu China Tel: 86-510-5166655 Fax: 86-510-5169922 SHENZHEN OFFICE: 86-755-83392346 13823533350 1 of 3 2002-09-07 |
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