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NUS2401SNT1 Integrated PNP/NPN Digital Transistors Array This new option of integrated digital transistors is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs (Bias Resistor Transistors) contain a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT technology eliminates these individual components by integrating them into a single device, therefore the integration of three BRTs results in a significant reduction of both system cost and board space. This new device is packaged in the SC-74/Case 318F package which is designed for low power surface mount applications. Features http://onsemi.com (6) (5) (4) Q3 * * * * * * * * * * Integrated Design Reduces Board Space and Components Count Simplifies Circuitry Design Offered in Surface Mount Package Technology (SC-74) Available in 3000 Unit Tape and Reel Pb-Free Package is Available Q1 (1) (2) Q2 (3) Typical Applications 6 5 4 3 Audio Muting Applications Drive Circuits Applications Industrial: Small Appliances, Security Systems, Automated Test Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette Recorders 12 SC-74 CASE 318F STYLE 4 MAXIMUM RATINGS (Maximum Ratings are those values beyond which damage to the device may occur. Electrical Characteristics are not guaranteed over this range.) MARKING DIAGRAM 50 M Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 200 Unit Vdc Vdc Vdc mAdc 50 M = Specific Device Code = Date Code THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 350 150 -55 to +150 Unit mW C C ORDERING INFORMATION Device NUS2401SNT1 NUS2401SNT1G Package SC-74 SC-74 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2004 April, 2004 - Rev. 2 Publication Order Number: NUS2401SNT1/D NUS2401SNT1 ELECTRICAL CHARACTERISTICS (Unless otherwise noted: TJ = 25C for typical values, common for Q1, Q2, and Q3, - minus signed for Q3 (PNP) omitted.) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VCE = 6.0 V, IC = 0) Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 1) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 1) DC Current Gain Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 1.0 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor Resistor Ratio 1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2%. Q3 Q1, Q2 Q3 Q1, Q2 Q3 Q1, Q2 Q3 Q1, Q2 VOL VOH R1 R1/R2 hFE VCE(sat) - - - 4.9 7.0 0.13 - - - - - - 10 0.175 1.0 0.25 0.25 0.2 - 13 0.22 - - V V kW 35 150 60 350 - - Vdc Q3 Q1, Q2 ICBO ICEO IEBO V(BR)CBO V(BR)CEO - - - - 50 50 - - - - - - 100 500 500 0.1 - - nAdc nAdc mA V V Symbol Min Typ Max Unit http://onsemi.com 2 NUS2401SNT1 400 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 RqJA = 357C/W VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 TA = -25C 0.1 25C 75C 0.01 0 10 IC/IB = 10 20 50 60 30 40 IC, COLLECTOR CURRENT (mA) 70 80 Figure 1. Derating Curve Figure 2. Maximum Collector Voltage versus Collector Current 6 1000 75C hFE, DC CURRENT GAIN 25C TA = -25C 100 Cob, CAPACITANCE (pF) 5 4 3 2 1 0 f = 1 MHz IE = 0 V TA = 25C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0 10 30 40 20 50 IC, COLLECTOR CURRENT (mA) 60 Figure 3. DC Current Gain Figure 4. Output Capacitance 100 IC, COLLECTOR CURRENT (mA) 25C TA = 75C -25C 10 Vin, INPUT VOLTAGE (V) 10 25C 1 -25C TA = 75C VO = 5 V VO = 0.2 V 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Vin, INPUT VOLTAGE (V) 0.8 0.9 1 0.1 0 10 30 40 20 50 IC, COLLECTOR CURRENT (mA) 60 Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current http://onsemi.com 3 NUS2401SNT1 TYPICAL ELECTRICAL CHARACTERISTICS - Q3 (PNP) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 1000 VCE = 10 V TA = -25C 0.1 75C 25C TA = 75C 100 25C -25C 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 4 NUS2401SNT1 PACKAGE DIMENSIONS SC-74 CASE 318F-05 ISSUE K A L 6 5 1 2 4 S 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F-01, -02, -03 OBSOLETE. NEW STANDARD 318F-04. DIM A B C D G H J K L M S INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0_ 10 _ 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0_ 10 _ 2.50 3.00 D G M 0.05 (0.002) H C K J STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.074 0.7 0.028 0.95 0.037 0.95 0.037 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NUS2401SNT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NUS2401SNT1/D |
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