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GBJ25005-GBJ2510
Vishay Lite-On Power Semiconductor
25A Glass Passivated Bridge Rectifier
Features
D D D D D D
Glass passivated die construction High case dielectric strength of 1500VRMS Low reverse leakage current Surge overload rating to 350A peak Ideal for printed circuit board applications Plastic material - UL Recognition flammability classification 94V-0
14 401
D ULRecognized file #E95060
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type GBJ25005 GBJ2501 GBJ2502 GBJ2504 GBJ2506 GBJ2508 GBJ2510 Symbol VRRM =VRWM =VR V Value 50 100 200 400 600 800 1000 350 25 -65...+150 Unit V V V V V V V A A C
Peak forward surge current Average forward current TC=100C Junction and storage temperature range
IFSM IFAV Tj=Tstg
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current I2t Rating for fusing Diode capacitance Thermal resistance junction to case Test Conditions IF=12.5A TC=25C TC=125C VR=4V, f=1MHz mounted on 220x220x1.6mm aluminum plate Type Symbol VF IR IR I2t CD RthJC Min Typ Max 1.05 10 500 510 Unit V
mA mA
A2s pF K/W
85 1.6
Rev. A2, 24-Jun-98
1 (4)
GBJ25005-GBJ2510
Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified)
IFAV - Average Forward Current ( A ) 30 C D - Diode Capacitance ( pF )
with heatsink
1000
Tj = 25C f = 1 MHz
25 20 15 10
without heatsink
100
10
5 0 0
Resistive or inductive load
1 50 75 100 125 150 Tamb - Ambient Temperature ( C ) 25 1
15668
10 VR - Reverse Voltage ( V )
100
15665
Figure 1. Max. Average Forward Current vs. Ambient Temperature
100 IF - Forward Current ( A )
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
1000 IR - Reverse Current ( m A )
Tj = 150C Tj = 125C Tj = 100C
10
100
1.0
10
0.1
Tj = 25C IF Pulse Width = 300 s
1.0
Tj = 25C
0.01 0
15666
0.4 0.8 1.2 1.6 VF - Forward Voltage ( V )
2.0
15669
0.1
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Typ. Forward Current vs. Forward Voltage
IFSM - Peak Forward Surge Current ( A )
Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage
400
Single Half Sine-Wave (JEDEC Method) Tj = 25C
300
200
100
0 1 10 Number of Cycles at 60 Hz 100
15667
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
2 (4)
Rev. A2, 24-Jun-98
GBJ25005-GBJ2510
Vishay Lite-On Power Semiconductor Dimensions in mm
14471
Case: molded plastic Polarity: molded on body Approx. weight: 6.6 grams Mounting: through hole for #6 screw Mounting torque: 5.0 in-lbs maximum Marking: type number
Rev. A2, 24-Jun-98
3 (4)
GBJ25005-GBJ2510
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98

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