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| ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package SO8 APPLICATIONS * Motor Drive * LCD backlighting Q1 = N-CHANNEL Q2 = P-CHANNEL ORDERING INFORMATION DEVICE ZXMC4559DN8TA ZXMC4559DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING * ZXMC 4559 Top view ISSUE 5 - MAY 2005 1 SEMICONDUCTORS ZXMC4559DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @V GS =10V; T A =25 C (b) (d) @V GS =10V; T A =25 C (b) (d) @V GS =10V; T A =25 C (a) (d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25C (a) (d) Linear Derating Factor Power Dissipation at TA=25C (a) (e) Linear Derating Factor Power Dissipation at TA=25C (b) (d) Linear Derating Factor Operating and Storage Temperature Range I DM IS I SM PD PD PD T j :T stg SYMBOL N-Channel V DSS V GS ID 60 20 4.7 3.7 3.6 22.2 3.4 22.2 1.25 10 1.8 14 2.1 17 -55 to +150 P-Channel -60 20 -3.9 -2.8 -2.6 -18.3 -3.2 -18.3 UNIT V V A A A A A A W mW/C W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) (d) Junction to Ambient (b) (e) Junction to Ambient (b) (d) Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. SYMBOL R JA R JA R JA VALUE 100 69 58 UNIT C/W C/W C/W (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) For a device with one active die. (e) For device with 2 active die running at equal power. ISSUE 5 - MAY 2005 SEMICONDUCTORS 2 ZXMC4559DN8 CHARACTERISTICS ISSUE 5 - MAY 2005 3 SEMICONDUCTORS ZXMC4559DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) NOTES (1) Measured under pulsed conditions. Width 300 s. Duty cycle 2% . (1) (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Qg Q gs Q gd 60 1.0 100 1.0 0.055 0.075 10.2 V A nA V I D =250 A, V GS =0V V DS =60V, V GS =0V V GS = 20V, V DS =0V I =250 A, V DS = V GS D V GS =10V, I D =4.5A V GS =4.5V, I D =4.0A V DS =15V,I D =4.5A S 1063 104 64 pF pF pF V DS =30V, V GS =0V, f=1MHz 3.5 4.1 26.2 10.6 11.0 20.4 4.1 5.1 ns ns ns ns nC nC nC nC V DS =30V,V GS =10V, I D =4.5A V DD =30V, I D =1A R G 6.0 , V GS =10V V DS =30V,V GS =5V, I D =4.5A V SD t rr Q rr 0.85 22 21.4 1.2 V ns nC T J =25C, I S =5.5A, V GS =0V T J =25C, I F =2.2A, di/dt= 100A/ s (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 5 - MAY 2005 SEMICONDUCTORS 4 ZXMC4559DN8 P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr -0.85 29.2 39.6 -0.95 V ns nC T J =25C, I S =-3.4A, V GS =0V T J =25C, I F =-2A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Qg Q gs Q gd 3.5 4.1 35 10 12.1 24.2 2.5 3.7 ns ns ns ns nC nC nC nC V DS =-30V,V GS =-5V, I D =-2.9A V DS =-30V,V GS =-10V, I D =-2.9A V DD =-30V, I D =-1A R G 6.0 , V GS =-10V (1) (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs C iss C oss C rss -60 -1.0 100 -1.0 0.085 0.125 7.2 V A nA V I D =-250 A, V GS =0V V DS =-60V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D V GS =-10V, I D =-2.9A V GS =-4.5V, I D =-2.4A V DS =-15V,I D =-2.9A S 1021 83.1 56.4 pF pF pF V DS =-30 V, V GS =0V, f=1MHz NOTES (1) Measured under pulsed conditions. Width 300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 5 - MAY 2005 5 SEMICONDUCTORS ZXMC4559DN8 N-CHANNEL TYPICAL CHARACTERISTICS T = 25C 10V 4.5V 4V 3.5V T = 150C 10V 4.5V 4V 3.5V 3V 2.5V VGS 2V ID Drain Current (A) 1 3V ID Drain Current (A) 10 10 1 0.1 0.1 VGS 0.01 0.1 1 10 2.5V 0.01 0.1 1 10 VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V) Output Characteristics 1.4 Output Characteristics VGS = 10V ID = 4.5A RDS(on) Normalised RDS(on) and VGS(th) 10 ID Drain Current (A) 1.2 1.0 0.8 0.6 0.4 -50 0 T = 150C 1 T = 25C VGS(th) VGS = VDS ID = 250uA 0.1 VDS = 10V 0.01 2 3 4 5 50 100 150 VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () 1000 100 10 1 0.1 0.01 0.01 0.1 1 10 2.5V VGS 3V 3.5V 4V 4.5V 10V T = 25C Normalised Curves v Temperature 100 ISD Reverse Drain Current (A) T = 150C 10 1 0.1 T = 25C 0.01 0.2 On-Resistance v Drain Current ID Drain Current (A) VSD Source-Drain Voltage (V) 0.4 0.6 0.8 1.0 1.2 Source-Drain Diode Forward Voltage ISSUE 5 - MAY 2005 SEMICONDUCTORS 6 ZXMC4559DN8 N-CHANNEL TYPICAL CHARACTERISTICS 1600 1400 10 VGS Gate-Source Voltage (V) C Capacitance (pF) VGS = 0V f = 1MHz ID = 4.5A 1200 1000 800 600 400 200 0 0.1 1 10 CISS COSS CRSS 8 6 4 2 VDS = 30V 0 0 5 10 15 20 25 VDS - Drain - Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge ISSUE 5 - MAY 2005 7 SEMICONDUCTORS ZXMC4559DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 5 - MAY 2005 SEMICONDUCTORS 8 ZXMC4559DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 5 - MAY 2005 9 SEMICONDUCTORS ZXMC4559DN8 PACKAGE OUTLINE D PACKAGE DIMENSIONS INCHES DIM MIN A A1 0.053 0.004 0.189 0.228 0.150 0.016 MAX 0.069 0.010 0.197 0.244 0.157 0.050 MIN 1.35 0.10 4.80 5.80 3.80 0.40 MAX 1.75 0.25 5.00 6.20 4.00 1.27 MILLIMETRES E H D H L Pin 1 E L e c 0.050 BSC 0.013 0.008 0 0.020 0.010 8 0.020 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 A Seating Plane b e A1 b c CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES h 0.010 (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 5 - MAY 2005 SEMICONDUCTORS 10 |
Price & Availability of ZXMC4559DN8NBSP
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