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| TS13001 High Voltage NPN Transistor BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA Pin assignment: 1. Emitter 2. Collector 3. Base Features High voltage. High speed switching Ordering Information Part No. TS13001CT Packing Bulk Package TO-92 Structure Silicon triple diffused type. NPN silicon transistor Absolute Maximum Rating (Ta = 25 oC Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC unless otherwise noted) Symbol VCBO VCEO VEBO IC Limit 500V 400V 9 0.1 0.3 Unit V V V A Pulse Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 5mS, Duty <= 10% TO-92 PD TJ TSTG 0.6 +150 - 55 to +150 W o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Output Capacitance Storage Time Fall Time Conditions IC = 10mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 IC / IB = 50mA / 10mA VCE = 5V, IC = 20mA VCB = 10V, f = 0.1MHz VCE = 250V, IC = 5 Ib, Ib1=Ib2=40mA Symbol Min 500 400 9 ---10 ---- Typ -------4 --- Max ---100 0.01 0.5 40 -2.0 0.8 Unit V V V uA uA V BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE Cob ts tf pF uS Note : pulse test: pulse width <=5mS, duty cycle <=10% TS13001 1-2 2003/12 rev. B TO-92 Mechanical Drawing A TO-92 DIMENSION MILLIMETERS INCHES MIN 4.30 4.30 0.43 2.19 3.30 2.42 0.37 MAX 4.70 4.70 0.49 2.81 3.70 2.66 0.43 MIN 0.169 0.169 0.017 0.086 0.130 0.095 0.015 MAX 0.185 0.185 0.019 0.111 0.146 0.105 0.017 DIM B A B C D E F 14.30(typ) 0.563(typ) C E F G H H D G TS13001 2-2 2003/12 rev. B |
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