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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MJE16106
Designer'sTM Data Sheet
NPN Silicon Power Transistor
Switchmode Bridge Series
* * * * * * . . . specifically designed for use in half bridge and full bridge off line converters. Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability Collector-Emitter Sustaining Voltage -- VCEO(sus) -- 400 V Collector-Emitter Breakdown -- V(BR)CES -- 650 V State-of-Art Bipolar Power Transistor Design Fast Inductive Switching: tfi = 30 ns (Typ) @ 100_C tc = 65 ns (Typ) @ 100_C tsv = 1.3 s (Typ) @ 100_C * Ultrafast FBSOA Specified * 100_C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages MAXIMUM RATINGS
POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS
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Rating Symbol Value 400 650 6 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Sustaining Voltage VCEO(sus) VCES Collector-Emitter Breakdown Voltage Emitter-Base Voltage VEBO IC ICM IB IBM PD Collector Current -- Continuous -- Pulsed (1) Base Current -- Continuous -- Pulsed (1) 8 16 6 12 Total Power Dissipation @ TC = 25_C @ TC = 100_C Derated above 25_C Operating and Storage Temperature 100 40 0.8 Watts W/_C TJ, Tstg - 55 to 150
CASE 221A-06 TO-220AB
_C
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 5 Seconds
RJC TL
1.25 275
_C/W _C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v 10%.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Designer's and SWITCHMODE are trademarks of Motorola Inc.
REV 1
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
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MJE16106
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS (1)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time
Storage Time
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table 2)
Fall Time
Crossover
Storage
Fall Time
Crossover
Storage
Inductive Load (Table 1)
Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Dynamic Saturation
DC Current Gain (IC = 8.0 Adc, VCE = 5.0 Vdc)
Base-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 1.0 Adc) (IC = 5.0 Adc, IB = 1.0 Adc, TC = 100_C)
Collector-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 0.25 Adc) (IC = 5.0 Adc, IB = 0.5 Adc) (IC = 5.0 Adc, IB = 1.0 Adc) (IC = 5.0 Adc, IB = 1.0 Adc, TC = 100_C)
Emitter-Base Leakage (VEB = 6.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = 650 Vdc, RBE = 50 , TC = 100_C)
Collector Cutoff Current (VCE = 650 Vdc, VBE(off) = 1.5 V) (VCE = 650 Vdc, VBE(off) = 1.5 V, TC = 100_C)
Collector-Emitter Sustaining Voltage (Table 1) (IC = 20 mAdc, IB = 0)
2
IC = 5.0 A, IB1 = 0.5 A, VCC = 250 V, PW = 30 s, Duty Cycle = 2.0% IC = 5.0 A, IB1 = 0.5 A, VBE(off) = 5 V, VCE(pk) = 250 V Characteristic
v
v 2.0%.
VBE(off) = 5 V
TJ = 100_C _C
IB2 = 1.0 A
TJ = 25_C _C
VCEO(sus)
VCE(dsat)
VCE(sat)
VBE(sat)
Symbol
Motorola Bipolar Power Transistor Device Data
IEBO ICER ICEV Cob hFE tsv tsv td ts ts tfi tc tfi tc tr tf tf Min 400 See Figures 11, 12, and 13 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6 1200 1800 1300 Typ 100 200 950 0.9 0.8 0.2 0.4 0.2 0.3 30 30 65 20 45 13 -- -- -- -- -- -- 70 100 1000 2600 2000 1000 Max 125 200 150 300 1.5 1.5 0.9 2.0 1.0 1.5 75 22 10 -- -- -- -- -- -- -- Adc Adc Adc Unit Vdc Vdc Vdc pF ns ns -- V
MJE16106
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 30 hFE , DC CURRENT GAIN 20 TJ = - 55C 10 7 5 VCE = 5.0 V 3 2 0.01 0.02 TJ = 100C TJ = 25C 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.1 0.2 0.3 0.5 0.7 1 2 3
TJ = 100C TJ = 25C
IC/IB = 5 IC/IB = 10 5 7 10
0.5 1 0.05 0.1 0.2 2 IC, COLLECTOR CURRENT (AMPS)
5
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
5 3 2 I =1A C 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 .01 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ = 25C 3A 5A 7A 8A
2.0 1.5 1.0 0.7 0.5 TJ = 25C
TJ = 100C IC/IB = 10 IC/IB = 5 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 7 10
0.3 0.2 0.1
.02 .03 .05 .07 0.1 0.2 0.3 0.5 0.7 1 IB, BASE CURRENT (AMPS)
23
5 7 10
Figure 3. Collector-Emitter Saturation Region
Figure 4. Base-Emitter Saturation Region
C, CAPACITANCE (pF)
10K 7K 5K 3K 2K 1K 700 500 300 200 100 70 50 30 20 10 0.1 0.2
Cib
TJ = 25C f = 1.0 kHz
Cob
0.5 1 2 5 10 20 50 100 200 500 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance
Motorola Bipolar Power Transistor Device Data
3
MJE16106
TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS IC/IB = 10, TC = 100C, VCE(pk) = 250 V
20K 10K t sv, STORAGE TIME (ns) 7K 5K 3K 2K 1K 700 500 300 200 1.5 IB2 = IB1 t c , CROSSOVER TIME (ns) IB2 = 2 (IB1) 1K 700 500 300 200 100 70 50 30 20 10 1.5 IB2 = IB1
IB2 = 2 (IB1)
VBE(off) = 2 V VBE(off) = 5 V
VBE(off) = 2 V
VBE(off) = 5 V
2
3 5 7 IC, COLLECTOR CURRENT (AMPS)
10
15
2
3 5 7 10 IC, COLLECTOR CURRENT (AMPS)
15
Figure 6. Inductive Storage Time
Figure 7. Crossover Time
1K 700 500 300 tfi, FALL TIME (ns) 200 100 70 50 30 20 10 1.5 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) IB2 = 2 (IB1) VBE(off) = 5 V VBE(off) = 2 V IB2 = IB1
Figure 8. Collector Current Fall Time
I B2, REVERSE BASE CURRENT (AMPS)
IC(pk) 90% VCE(pk) IC tsv trv tc 10% VCE(pk) 90% IB1
10 VCE(pk) 90% IC(pk) tfi tti 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 IC = 5.0 A TJ = 25C IB1 = 1.0 A IB1 = 1.0 A
VCE IB
10% IC(pk)
2% IC
t,TIME TIME
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure 9. Inductive Switching Measurements
Figure 10. Peak Reverse Base Current
4
Motorola Bipolar Power Transistor Device Data
MJE16106
Table 1. Inductive Load Switching Drive Circuit
+15 1 F 150 100 100 F MTP8P10 MTP8P10 RB1 A MPF930 50 MUR105 MTP12N10 500 F 150 Voff *Tektronix AM503 *P6302 or Equivalent Scope -- Tektronix 7403 or Equivalent T1 (ICpk [ LcoilCC ) V T1 0V -V +V MJE210 1 F RB2 VCEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 20 mA Inductive Switching L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RBSOA L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 A *IB Vclamp VCC IC(pk) IC VCE(pk) VCE IB1 IB IB2 *IC T.U.T. MR918
MPF930 +10
L
T1 adjusted to obtain IC(pk) Note: Adjust Voff to obtain desired VBE(off) at Point A.
Table 2. Resistive Load Switching
+15 H.P. 214 OR EQUIV. P.G. RB = 8.5 50
td and tr
*IB T.U.T. RL VCC *IC
ts and tf
1 F
150
100
100 F MTP8P10 MTP8P10 RB1 A
V(off) adjusted to give specified off drive
MPF930 +10 V MPF930 50 MUR105
RB2 MTP12N10
VCC VCC Vin 0V tr 15 ns *Tektronix AM503 *P6302 or Equivalent 11 V RL IC IB 250 Vdc 25 5A 0.5 A IC IB1 IB2 RB1 RB2 RL
250 V 5A 0.5 A Per Spec 30 Per Spec 25 Voff A *IB T.U.T. 500 F 150 MJE210 1 F
*IC VCC
RL
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5 IC = 5 A TJ = 25C t = 1 s
VCE
VCE(dsat) = DYNAMIC SATURATION VOLTAGE AND IS MEASURED FROM THE 90% POINT OF IB1 (t = 0) TO A MEASUREMENT POINT ON THE TIME AXIS (t1, t2 or t3 etc.)
4
3
2 t = 2 s MAXIMUM TYPICAL 0 0 0.5 1 1.5 IB, BASE CURRENT (AMPS) 2 2.5
90% IB1 IB1 0 t1 t2 t3 t4 t, TIME t5 t6 t7 t8
1
0
Figure 11. Definition of Dynamic Saturation Measurement
Figure 12. Dynamic Saturation Voltage
Motorola Bipolar Power Transistor Device Data
5
MJE16106
DYNAMIC SATURATION VOLTAGE
For bipolar power transistors low DC saturation voltages are achieved by conductivity modulating the collector region. Since conductivity modulation takes a finite amount of time, DC saturation voltages are not achieved instantly at turn-on. In bridge circuits, two transistor forward converters, and two transistor flyback converters dynamic saturation characteristics are responsible for the bulk of dynamic losses. The MJE16106 has been designed specifically to minimize these losses. Performance is roughly four times better than the original version of MJ16006. From a measurement point of view, dynamic saturation voltage is defined as collector-emitter voltage at a specific point in time after IB1 has been applied, where t = 0 is the 90% point on the IB1 rise time waveform. This definition is illustrated in Figure 11. Performance data was taken in the circuit that is shown in Figure 13. The 24 volt rail allows a Tektronix 2445 or equivalent scope to operate at 1 volt per division without input amplifier saturation. Dynamic saturation performance is illustrated in Figure 12. The MJE16106 reaches DC saturation levels in approximately 2 s, provided that sufficient base drive is provided. The dependence of dynamic saturation voltage upon base drive suggests a spike of IB1 at turn-on to minimize dynamic saturation losses, and also avoid overdrive at turn-off. However, in order to simulate worst case conditions the guaranteed dynamic saturation limits in this data sheet are specified with a constant level of IB1.
20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 10 7 5 MJE16106 3 TC = 25C 2
+ 24 Q1 MJ11012 1k 4 1k 10 k 7 1N5314 8 1N4111 100 F 2.4 20 W 100 1W 0.01 F 2.4 mH Q5 MTM8P08 10 F IC 47 1W 1.8 k IRFD9123 7 10 k 2 U2 MC1455 (25 s) Q2 6 3 1 5 0.01 F 0.01 F Q3 IRFD113 MUR405 500 MUR405 Q6 MTP25N06 IB T.U.T. V CE 1N5831
U1 MC1455 6 100 pF (OSCILLATOR) 3 2 15 0.01 F
Q4 IRFD9120
0.1 F
4 1N914
8
Figure 13. Dynamic Saturation Test Circuit
GUARANTEED SAFE OPERATING AREA INFORMATION
20 18 16 14 12 10 8 6 4 2 0 500 650 0 100 200 300 400 500 600 700 800 900 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1K VBE(off) = 0 V IC/IB1 = 5 TJ 100C
1.0 ms
10 s 100 ns II
dc 1 REGION II -- EXPANDED 0.7 0.5 FBSOA USING MUR870 0.3 ULTRAFAST RECTIFIER 0.2 (SEE FIGURE 16) WIRE BOND LIMIT 0.1 0.07 THERMAL LIMIT 0.05 SECONDARY BREAKDOWN 0.03 LIMIT 0.02 20 30 50 70 100 200 300 7 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VBE(off) = 1 to 5 V
Figure 14. Maximum Rated Forward Bias Safe Operating Area
+15 1.0 F 150 100 100 F MTP8P10
Figure 15. Maximum Rated Reverse Bias Safe Operating Area
VCE (650 V MAX) 10 F MTP8P10 RB1
10 mH
MUR870
MUR170
MPF930 +10 MPF930 50 MUR105 RB2 MTP12N10 500 F 150 VOff MJE210 1 F Note: Test Circuit for Ultra-fast FBSOA Note: RB2 = 0 and VOff = - 5 Volts MUR105 T.U.T.
Figure 16. Switching Safe Operating Area 6 Motorola Bipolar Power Transistor Device Data
MJE16106
100 POWER DERATING FACTOR (%)
80
SECOND BREAKDOWN DERATING THERMAL DERATING
60
40
20
0
0
40
120 80 TC, CASE TEMPERATURE (C)
160
200
Figure 17. Power Derating
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01
D = 0.5 0.2 0.1 0.05 0.02 ZJC(t) = r(t) RJC RJC = 1.0 OR 1.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC 0.2 0.5 1 2 5 t, TIME (ms) 10 20 50 P(pk)
t1
t2
SINGLE PULSE 0.02 0.05 0.1
DUTY CYCLE, D = t1/t2 100 200 500 1.0 k
Figure 18. Typical Thermal Response [ZJC(t)]
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data in Figure 14 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 14 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 18. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with
the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 15 gives the RBSOA characteristics.
SWITCHMODE III DESIGN CONSIDERATIONS
FBSOA Allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collector-emitter voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated V (BR)CEO(sus). From a power handling point of view, current and voltage are not interchangeable (see Application Note AN875).
Motorola Bipolar Power Transistor Device Data
7
MJE16106
TURN-ON Safe turn-on load line excursions are bounded by pulsed FBSOA curves. The 10 s curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Similarly, the 100 ns curve applies to inductive loads which are clamped by ultra- fast recovery rectifiers, and are valid for turn-on crossover times less than 100 ns (AN952). At voltages above 75% of V (BR)CEO(sus), it is essential to provide the transistor with an adequate amount of base drive VERY RAPIDLY at turn-on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note AN875). TURN-OFF A bipolar transistor's ability to withstand turn-off stress is dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this reason, circuits which use fixed base drive are more likely to fail at light loads due to heavy overdrive (see Application Note AN875). OPERATION ABOVE V(BR)CEO(sus) When bipolars are operated above collector-emitter breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn-on, as is a stiff negative bias needed for safe turn-off. Any hiccup in the base-drive circuitry that even momentarily violates either of these conditions will likely cause the transistor to fail. Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952). RBSOA Reversed Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951). DESIGN SAMPLES Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one device to the next in the same wafer lot. For design evaluation it is advisable to use transistors from several different date codes. BAKER CLAMPS Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR170 diodes are recommended for base drives less than 1 amp. Similarly, MUR405 and MUR470 types are well-suited for higher drive requirements (see Article Reprint AR131).
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Motorola Bipolar Power Transistor Device Data
MJE16106
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
CASE 221A-06 TO-220AB ISSUE Y
Motorola Bipolar Power Transistor Device Data
9
MJE16106
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
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Motorola Bipolar Power Transistor Device Data
*MJE16106/D*
MJE16106/D

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