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PD - 94103 SMPS MOSFET IRFU3709 HEXFET(R) Power MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l l l l VDSS 30V RDS(on) max 9.0m ID 90A Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current I-Pak IRFU3709 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 30 20 90 57 360 120 48 0.96 -55 to + 150 Units V V A W W mW/C C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. --- --- Max. 1.04 110 Units C/W Notes through are on page 9 www.irf.com 1 02/20/01 IRFU3709 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.029 6.9 7.9 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 9.0 VGS = 10V, ID = 15A m 10.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 27 6.7 9.7 22 11 171 21 9.2 2672 1064 109 Max. Units Conditions --- S VDS = 15V, ID = 30A 41 ID = 15A --- nC VDS = 15V --- VGS = 4.5V --- VGS = 0V, VDS = 10V --- VDD = 15V --- ID = 30A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 16V --- = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 382 30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.88 0.82 48 46 48 52 90 A 360 1.3 --- 72 69 72 78 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V TJ = 125C, I S = 30A, VGS = 0V TJ = 25C, I F = 30A, VR=15V di/dt = 100A/s TJ = 125C, IF = 30A, VR=15V di/dt = 100A/s 2 www.irf.com IRFU3709 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 1000 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 2.7V 2.7V 10 10 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 90A I D , Drain-to-Source Current (A) 1.5 TJ = 150 C 100 1.0 0.5 10 2.0 V DS = 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFU3709 4000 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 3000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6 ID = 30A 5 V DS= 24V V DS= 15V V DS= 6V Ciss 4 2000 3 1000 Coss 2 1 0 1 Crss 10 100 0 0 5 10 15 20 25 30 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C ID , Drain Current (A) 100 1000 10us 10 100 100us 1ms TJ = 25 C 1 10 10ms 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 1 TC = 25 C TJ = 150 C Single Pulse 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFU3709 100 LIMITED BY PACKAGE VDS VGS RD 80 D.U.T. + ID , Drain Current (A) RG -VDD 60 VGS Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.001 0.01 0.1 PDM t1 t2 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFU3709 EAS , Single Pulse Avalanche Energy (mJ) 1200 15 V 1000 VDS L D R IV E R TOP BOTTOM ID 13A 19A 30A 800 RG 20V D .U .T IA S tp 0.0 1 + - VD D A 600 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFU3709 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFU3709 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S OUR C E 4 - D R A IN 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 9 .6 5 (.3 8 0 ) 8 .8 9 (.3 5 0 ) 2 3 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U TL IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ). 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 3X 0 .8 9 ( .0 3 5 ) 0 .6 4 ( .0 2 5 ) M AMB 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .58 (.0 2 3 ) 0 .46 (.0 1 8 ) 2 .2 8 (.0 9 0 ) 2X 0 .2 5 (.0 1 0 ) I-Pak (TO-251AA) Part Marking Information 8 www.irf.com IRFU3709 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. Starting TJ = 25C, L = 0.85mH RG = 25, IAS = 30A. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/01 www.irf.com 9 |
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