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PD - 94100
HFB35HB20
HEXFRED
Features
* * * * Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic
TM
Ultrafast, Soft Recovery Diode
VR = 200V IF(AV) = 35A trr = 35ns
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
TM
Absolute Maximum Ratings
Parameter
VR IF(AV) IFSM PD @ TC = 25C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, Q TC = 80C Single Pulse Forward Current, R TC = 25C Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
200 35 150 125 -55 to +150
Units
V A W C
Note: Q D.C. = 50% rect. wave R 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
CASE STYLE
(ISOLATED BASE)
CATHODE
ANODE
TO-254AA
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03/23/01
HFB35HB20
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
VBR VF Cathode Anode Breakdown Voltage Forward Voltage See Fig. 1
Min. Typ. Max. Units
200 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.8 -- 1.25 1.15 1.41 1.92 1.01 10 1.0 175 -- A mA pF nH V V
Test Conditions
IR = 100A IF = 20A, TJ =-55C IF = 20A, TJ = 25C IF = 35A, TJ = 25C IF = 70A, TJ = 25C IF = 20A, TJ =125C VR = VR Rated VR = VR Rated, TJ = 125C VR = 200V Measured from anode lead to cathode lead , 6mm ( 0.025 in) from package See Fig. 2
IR
Reverse Leakage Current See Fig. 2 Junction Capacitance, See Fig. 3 Series Inductance
-- -- -- --
CT LS
Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
t rr trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb
Min.
-- -- -- -- -- -- -- -- --
Typ. Max. Units
-- 45 68 3.3 7.6 76 270 236 1020 35 -- -- -- -- -- -- -- -- ns ns
Test Conditions
IF = 1.0A,VR = 30V, dif/dt = 200A/s TJ = 25C See Fig. TJ = 125C 5 IF = 35A TJ = 25C See Fig. A A TJ = 125C 6 VR = 160V TJ = 25C See Fig. nC TJ = 125C 7 dif/dt = 200A/s nC TJ = 25C See Fig. A/s 8 A/s TJ = 125C
Thermal - Mechanical Characteristics
Parameter
RthJC Wt Junction-to-Case Weight
Typ.
-- 9.3
Max.
1.0 --
Units
C/W g
2
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HFB35HB20
100
100
125C
Reverse Current - I R (A)
10
100C 75C
1
0.1
Instantaneous Forward Current - I F (A)
25C
0.01
0.001 0 40 80 120 160 200
10
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current Vs. Reverse Voltage
10000
Tj = 25C
Junction Capacitance - C T (pF)
Tj = 125C
1000
Tj = -55C
T J = 25C
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Forward Voltage Drop - V F (V)
100 0 40 80 120 160 200
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Vs. Instantaneous Forward Current
10
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.1 1 0.01 10
PDM t1 t2
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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HFB35HB20
90 100
VR = 160V TJ = 125C TJ = 25C
IF = 70A IF = 35A
70
IRRM - ( A )
trr - ( ns )
IF = 17.5A
10
IF = 17.5A IF = 35A
50
IF = 70A
VR = 160V TJ = 125C TJ = 25C
30 100 1000
1 100 1000
dif / dt - ( A / s )
dif / dt - ( A / s )
Fig. 5 - Typical Reverse Recovery Vs. dif/dt,
Fig. 6 - Typical Recovery Current Vs. dif/dt,
1000
10000
IF = 35A
IF = 70A
100
di ( rec )M / dt - ( A / s )
IF = 17.5A
Qrr - ( nC )
1000
IF = 70A IF = 35A IF = 17.5A
VR = 160V TJ = 125C TJ = 25C 10 100 1000
VR = 160V TJ = 125C TJ = 25C 100 100 1000
dif / dt - ( A / s )
dif / dt - ( A / s )
Fig. 7 - Typical Stored Charge Vs. dif/dt
Fig. 8 - Typical di(rec)M/dt Vs. dif/dt
4
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HFB35HB20
3
IF
t rr ta tb
4
R E V E R S E R E C O V E R Y C IR C U IT
V R = 2 00 V
0 Q rr
2
I RRM
0.5 I R R M di(rec)M /dt
5
0.01 L = 70H D .U .T. D d if/d t A D JU S T G IR F P 2 50 S
1
0.75 I R R M di f /dt
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr
1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
Case Outline and Dimensions -- TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249]
1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665] 31.40 [1.235] 30.35 [1.195] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
17.40 [.685] 16.89 [.665]
B
3X 3.81 [.150] 2X NOT ES : 1. 2. 3. 4.
1.14 [.045] 0.89 [.035] 0.36 [.014] B A PIN AS S IGNMENTS 1 = DRAIN 2 = S OURCE 3 = GAT E
3.81 [.150]
DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. CONFORMS T O JEDEC OUTLINE T O-254AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/01
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