|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
DISCRETE SEMICONDUCTORS DATA SHEET BFM505 Dual NPN wideband transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification Dual NPN wideband transistor FEATURES * Small size * Temperature and hFE matched * Low noise and high gain * High gain at low current and low capacitance at low voltage * Gold metallization ensures excellent reliability. APPLICATIONS * Oscillator and buffer amplifiers * Balanced amplifiers * LNA/mixer. b1 6 handbook, halfpage BFM505 PINNING - SOT363A PIN 1 2 3 4 5 6 SYMBOL b1 e1 c2 b2 e2 c1 base 1 emitter 1 collector 2 base 2 emitter 2 collector 1 DESCRIPTION 5 4 c1 b2 e1 e2 MAM210 c2 DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. - - 14 - - - - 1 2 3 Top view Marking code: N0. Fig.1 Simplified outline and symbol. TYP. MAX. - - - - 1.6 230 115 UNIT Any single transistor Cre fT s 21 GUM F Rth j-s 2 feedback capacitance transition frequency insertion power gain maximum unilateral power gain noise figure thermal resistance from junction to soldering point Ie = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3V; f = 1 GHz IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 1 mA; VCE = 3 V; f = 900 MHz; S = opt single loaded double loaded 0.22 9 15 17 1.1 - - pF GHz dB dB dB K/W K/W 1996 Oct 08 2 Philips Semiconductors Product specification Dual NPN wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System IEC 134. SYMBOL PARAMETER CONDITIONS MIN. - - - - up to Ts = 118 C; note 1 - -65 - BFM505 MAX. UNIT Any single transistor VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature open emitter open base open collector 20 8 2.5 18 500 +175 175 V V V mA mW C C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 single loaded double loaded CONDITIONS VALUE 230 115 UNIT K/W K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1996 Oct 08 3 Philips Semiconductors Product specification Dual NPN wideband transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 2.5 A; IE = 0 IE = 2.5 A; IC = 0 VCB = 6 V; IE = 0 IC = 5 mA; VCE = 6 V IC1 = IC2 = 5 mA; VCE1 = VCE2 = 6 V IE1 = IE2 = 10 mA; Tamb = 25 C MIN. TYP. - - - - 120 BFM505 MAX. - - - 50 250 - - UNIT DC characteristics of any single transistor V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE hFE VBEO collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain 20 8 2.5 - 60 V V V nA collector-emitter breakdown voltage IC = 10 A; IB = 0 DC characteristics of the dual transistor ratio of highest and lowest DC current gain difference between highest and lowest base-emitter voltage (offset voltage) 1 0 1.2 1 mV AC characteristics of any single transistor fT Cc Cre GUM transition frequency collector capacitance feedback capacitance maximum unilateral power gain; note 1 IC = 5 mA; VCE = 3 V; f = 1 GHz IE = ie = 0; VCB = 3 V; f = 1 MHz IC = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3 V; Tamb = 25 C; f = 900 MHz IC = 5 mA; VCE = 3 V; Tamb = 25 C; f = 2 GHz s 21 F 2 - - - - - 14 - - - 9 0.31 0.22 17 10 15 1.4 1.9 1.1 - - - - - - 1.8 - 1.6 GHz pF pF dB dB dB dB dB dB insertion power gain noise figure IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VCE = 3 V; f = 900 MHz; S = opt IC = 5 mA; VCE = 3 V; f = 2 GHz; S = opt IC = 1 mA; VCE = 3 V; f = 900 MHz; S = opt Note s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------ dB ( 1 - s 11 2 ) ( 1 - s 22 2 ) 1996 Oct 08 4 Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 handbook, halfpage 600 MBG208 handbook, halfpage 12 MGD687 Ptot (mW) 400 double loaded fT (GHz) VCE = 6V 8 3V single loaded 200 4 0 0 50 100 150 Ts (oC) 200 0 10-1 1 IC (mA) 10 f = 1 GHz; Tamb = 25 C. Fig.2 Power derating as a function of soldering point temperature; typical values. Fig.3 Transition frequency as a function of collector current; typical values. handbook, halfpage 250 MRA719 handbook, halfpage 0.4 MRA720 hFE 200 Cre (pF) 0.3 150 0.2 100 0.1 50 0 10-3 0 10-2 10-1 1 10 102 IC (mA) 0 2 4 6 8 10 VCB (V) VCE = 6 V. IC = 0; f = 1 MHz. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. 1996 Oct 08 5 Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 handbook, halfpage 20 MGG199 handbook, halfpage 20 MGG200 gain (dB) 16 GUM gain (dB) 16 12 MSG 12 MSG/Gmax GUM 8 8 4 4 0 0 4 8 IC (mA) 12 0 0 4 8 IC (mA) 12 f = 900 MHz; VCE = 3 V. f = 2 GHz; VCE = 3 V. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. MGG201 handbook, halfpage 50 handbook, halfpage 50 MGG202 gain (dB) 40 GUM 30 MSG/Gmax gain (dB) 40 GUM 30 MSG/Gmax 20 20 10 10 0 10 102 103 f (MHz) 104 0 10 102 103 f (MHz) 104 IC = 1 mA; VCE = 3 V. IC = 5 mA; VCE = 3 V. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. 1996 Oct 08 6 Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 handbook, halfpage 5 MGC766 F (dB) handbook, halfpage 20 MGD686 Gass (dB) 15 4 f = 900 MHz 1GHz 3 10 2 GHz 2 5 2000 MHz 1000 MHz 900 MHz 500 MHz 1 0 0 10-1 1 IC (mA) 10 -5 10-1 1 IC (mA) 10 VCE = 3 V. VCE = 3 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Associated available gain as a function of collector current; typical values. handbook, halfpage 5 MGC768 F (dB) handbook, halfpage 20 MGC769 Gass (dB) IC = 1.25 mA 15 5 mA 4 3 10 2 5 mA 1 1.25 mA 0 102 103 f (MHz) 104 5 0 -5 102 103 f (MHz) 104 VCE = 3 V. VCE = 3 V. Fig.12 Minimum noise figure as a function of frequency; typical values. Fig.13 Associated available gain as a function of frequency; typical values. 1996 Oct 08 7 Philips Semiconductors Product specification Dual NPN wideband transistor APPLICATION INFORMATION SPICE parameters for any single BFM505 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 Note 1. These parameters have not been extracted, the default values are shown. 1996 Oct 08 8 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 134.1 180.0 0.988 38.34 150.0 27.81 2.051 55.19 0.982 2.459 2.920 17.45 1.062 20.00 1.000 20.00 1.171 4.350 0.000 1.110 3.000 284.7 600.0 0.303 7.037 12.34 1.701 30.64 0.000 242.4 188.6 0.041 0.130 1.332 0.000 750.0 0.000 0.897 UNIT aA - - V mA fA - - - V mA aA - A - eV - fF mV - ps - V mA deg fF mV - - ns F mV - - handbook, halfpage BFM505 C1 C2 LP LP B1 LB T1 T2 LB B2 LE LE E1 E2 MBG188 Fig.14 Package equivalent circuit SOT363A (inductance only). Lead inductances (nH) LP LB LE 0.4 0.6 1.0 E2 3 27 1 3 48 B1 E1 6 27 17 36 E2 B2 3 36 17 E1 C2 48 3 B2 C1 6 MBG189 C2 Fig.15 Package capacitance (fF) between indicated nodes. Philips Semiconductors Product specification Dual NPN wideband transistor PACKAGE OUTLINE BFM505 handbook, full pagewidth 0.2 1.1 0.8 0.9 0.6 0.1 0.0 0.25 0.10 0.3 0.1 A 1.35 1.15 0.2 M B B 0.65 1 6 0.3 0.2 (6x) 2.2 1.8 0.65 2 5 3 2.2 2.0 4 MSA368 0.2 M A Dimensions in mm. Fig.16 SOT363. 1996 Oct 08 9 Philips Semiconductors Product specification Dual NPN wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values BFM505 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 08 10 |
Price & Availability of BFM505 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |