View BAV99_276053.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Silicon Switching Diode Array
BAV 99
Features For high-speed switching q Connected in series
q
Type BAV 99
Marking A7s
Ordering Code (tape and reel) Q68000-A549
Pin Configuration
Package1) SOT-23
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total power dissipation, TS = 31 C Junction temperature Storage temperature range Symbol VR VRM IF IFS Ptot Tj Tstg Values 70 70 200 4.5 330 150 - 65 ... + 150 mA A mW C Unit V
1)For
detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BAV 99
Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

500 360
K/W
Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 A Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 70 V VR = 25 V, TA = 150 C VR = 70 V, TA = 150 C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA CD trr - - - - 1.5 6 pF ns V(BR) VF - - - - IR - - - - - - 2.5 30 50 - - - - 715 855 1000 1250
A
Values typ. max.
Unit
70
-
-
V mV
2)Package
mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BAV 99
Test Circuit for Reverse Recovery Time
Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50
Oscillograph:
R = 50 tr = 0.35 ns C 1 pF
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Forward current IF = f (VF) TA = 25 C
Semiconductor Group
3
BAV 99
Reverse current IR = f (TA)
Forward voltage VF = f (TA)
Peak forward current IFM = f (t) TA = 25 C
Semiconductor Group
4

▲Up To Search▲

Price & Availability of BAV99

	To Download BAV99 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .