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| 2SK1761 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter 12 2 3 1.1. Gate Gate 2.2. Drain (Flange) Drain (Flange) 3. Source 3. Source 1 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 30 12 48 12 75 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK1761 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 6 A VGS = 10 V * ID = 6 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.23 10 250 3.0 0.35 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 5.0 8.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1100 440 68 20 65 100 44 1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 12 A, VGS = 0 IF = 12 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 200 -- ns -------------------------------------------------------------------------------------- 2SK1761 Power vs. Temperature Derating 160 Maximum Safe Operation Area 100 10 Pch (W) 30 120 s 10 0 Drain Current I D (A) 10 D C PW = 1 s Channel Dissipation 10 m s m 80 s (1 O n tio ra pe 3 1 sh ot ) c (T Ta = 25C = 40 25 C ) 0.3 0 50 100 Case Temperature 150 Tc (C) 200 Operation in this area is limited by R DS (on) 0.1 1 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 20 10 V 16 Drain Current I D (A) 6V Pulse Test 5.5 V Drain Current I D (A) 8 10 Typical Transfer Characteristics V DS = 10 V Pulse Test 12 5V 8 4.5 V 4 V GS = 4 V 6 Tc = 75C 4 25C - 25C 2 0 4 8 12 16 Drain to Source Voltage V DS (V) 20 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 2SK1761 Drain-Source Saturation Voltage vs. Gate-Source Voltage 5 Pulse Test Drain to Source Saturation Voltage VDS (on) (V) 5 Static Drain-Source on State Resistance vs. Drain Current Pulse Test Static Drain-Source On State Resistance R DS (on) ( ) 4 2 1 0.5 V GS = 10 V 3 10 A 2 5A 1 ID = 2 A 0.2 15 V 0.1 0 4 8 12 16 20 0.05 0.5 1 2 5 10 20 50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain-Sourve on State Resistance vs. Temperature 1.0 50 Forward Transfer Admittance vs. Drain Current V DS = 10 V Pulse Test Forward Transfer Admittance |y fs| (S) 20 10 5 75C 25C 2 1 Tc = -25C Static Drain-Source on State Resistance R DS (on) ( ) 0.8 Pulse Test V GS = 10 V 0.6 I D = 10 A 0.4 5A 0.2 2A 0 - 40 0 40 80 120 160 0.5 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (C) Drain Current I D (A) 2SK1761 Body-Drain Diode Reverse Recovery Time 500 di / dt = 100 A / s V GS = 0, Ta = 25C Reverse Recovery Time trr (ns) 200 Capacitance C (pF) 10000 Typical Capacitance vs. Drain-Source Voltage V GS = 0 f = 1 MHz Ciss 1000 100 50 Coss 20 10 5 0.2 100 Crss 10 0 0.5 1 2 5 10 20 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics 500 Drain to Source Voltage V DS (V) I D = 12 A 400 V GS 300 V DS 200 V DD = 200 V 100 V 50 V 12 16 20 500 Switching Characteristics . V GS = 10 V,V DD = 30 V . PW = 2 s, duty 1 % Gate to Source Voltage V GS (V) 200 Switching Time t (ns) td (off) 100 50 tr 20 10 tf td (on) 8 100 V DD = 200 V 100 V 50 V 8 16 24 32 40 4 0 0 Gate Charge Q g (nc) 0 5 0.1 0.2 0.5 1 2 5 10 Drain Current I D (A) 2SK1761 Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test Reverse Drain Current IDR (A) 16 12 8 4 V GS = 10 V 0, - 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 D=1 0.5 0.3 0.2 ch - c(t) = s(t) . ch - c ch - c = 1.67C / W, Tc = 25C PW D= T P DM T 100 1m 10 m Pulse Width PW (S) 100 m PW Tc = 25C 1.0 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 ho 1s tP uls e 1 10 2SK1761 Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin 10 V 50 Vin Vout 10 % 10 % 10 % . . V DD = 30 V td (on) 90 % tr 90 % td (off) tf |
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