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PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
FEATURES
* * * SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm LOW HEIGHT PROFILE: Just 0.60 mm high TWO DIFFERENT DIE TYPES: Q1 - Ideal oscillator transistor Q2 - Ideal buffer amplifier transistor
0.65 2.0 0.2 1.3 2
Q2
UPA837TF
OUTLINE DIMENSIONS (Units in mm)
Package Outline TS06
2.1 0.1 1.25 0.1
Q1
1
6 0.22 - 0.05 (All Leads)
+0.10
5
DESCRIPTION
The UPA837TF contains one NE686 and one NE688 NPN high frequency silicon bipolar chip. NEC's new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.
3
4
0.6 0.1
0.45 0 ~ 0.1
0.13 0.05
PIN CONNECTIONS 1. Collector (Q1) 4. Base (Q2) 2. Emitter (Q1) 5. Emitter (Q2) 3. Collector (Q2) 6. Base (Q1)
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE fT fT Cre |S21E|2 |S21E|2 NF NF ICBO IEBO hFE fT fT Cre |S21E|2 |S21E|2 NF NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 2 V, IC = 7 mA Gain Bandwidth (1) at VCE = 2 V, IC = 7 mA, f = 2 GHz Gain Bandwidth (2) at VCE = 1 V, IC = 5 mA, f = 2 GHz Feedback Capacitance2 at VCB = 2 V, IE = 0, f = 1 MHz Insertion Power Gain (1) at VCE = 2 V, IC =7 mA, f = 2 GHz Insertion Power Gain (2) at VCE = 1 V, IC =5 mA, f = 2 GHz Noise Figure (1) at VCE = 2 V, IC = 3 mA, f = 2 GHz Noise Figure (2) at VCE = 1 V, IC = 3 mA, f = 2 GHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 1 V, IC = 3 mA GHz GHz pF dB dB dB dB 2.5 Gain Bandwidth (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz Gain Bandwidth (2) at VCE = 3 V, IC = 20 mA, f = 2 GHz Feedback Capacitance2 at VCB = 1 V, IE = 0, f = 1 MHz Insertion Power Gain (1) at VCE = 1 V, IC =3 mA, f = 2 GHz Insertion Power Gain (2) at VCE = 3 V, IC =20 mA, f = 2 GHz Noise Figure (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz Noise Figure (2) at VCE = 3 V, IC = 7 mA, f = 2 GHz GHz GHz pF dB dB dB dB A A 100 4.0 4.5 9.0 0.75 3.5 6.5 1.7 1.5 7.5 7 UNITS A A 70 10 8.5 13 12 0.4 9 8.5 1.5 1.5 MIN
Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.
UPA837TF TS06 TYP MAX 0.1 0.1 140
Q1
0.6
2 2 0.1 0.1 145
Q2
0.85
2.5
Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter.
California Eastern Laboratories
UPA837TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS Q1 5 3 2 10 Q2 9 6 2 100
ORDERING INFORMATION
PART NUMBER UPA837TF-T1 QUANTITY 3000 PACKAGING Tape & Reel
110 110 200 150 150 -65 to +150
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE

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