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NTE2399 MOSFET N-Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Gate-to-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6-32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = +25C, L = 55mH, RG = 25, IAS = 3.1A ISD 3.1A, di/dt 80A/s, VDD 600V, TJ +150C Pules Width 300s, Duty Cycle 2%.
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250A Min 1000 - - 2.0 2.1 - - - - - - - VDD = 500V, ID = 3.1A, RG = 12, RD = 170, Note 4 - - - - Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz - - - - - Typ - 1.4 - - - - - - - - - - 12 25 89 29 4.5 7.5 980 140 50 Max - - 0.50 4.0 - 100 500 -100 100 80 10 42 - - - - - - - - - Unit V V/C V mhos A A nA nA nC nC nC ns ns ns ns nH nH pF pF pF
V(BR)DSS Reference to +25C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss VGS = 10V, ID = 1.9A, Note 4 VDS = VGS, ID = 250A VDS = 100V, ID = 1.9A, Note4 VDS = 1000V, VGS = 0V VDS = 800V, VGS = 0V, TJ = +125C VGS = -20V VGS = 20V ID = 3.1A, VDS = 400V, VGS = 10V, Note 4
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capaticance
Source-Drain Ratings and Characteristics:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Symbol IS ISM VSD trr Qrr ton Note 1 TJ = +25C, IS = 3.1A, VGS = 0V, Note 4 TJ = +25C, IF = 3.1A, di/dt = 100A/s, Note 4 Test Conditions Min - - - - - Typ - - - 410 1.3 Max 3.1 12 1.8 620 2.0 Unit A A V ns C
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width 300s; duty cycle 2%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab

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