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| SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary to KTB778. B E U A KTD998 TRIPLE DIFFUSED NPN TRANSISTOR C R W V W L M D MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 120 120 5 10 1 80 150 -55 150 UNIT V V V A A W J N K I H O O 1 2 3 1. BASE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 16.30 MAX _ B 12.00 + 0.30 _ C 5.50 + 0.20 D 1.20 MAX 8.00 E F 5.00 _ G 17.00 + 0.30 H 0.60+0.15/-0.10 2.50 I _ 20.0 + 0.1 J 4.00 K L 2.00 M 2.20 MAX 3.05 MAX N 5.45 O P 3.50 Q 1.00 _ R 3.00 + 0.20 S 37.0 T 42.0 U 3.40+0.15/-0.10 V 10 W 8 G F Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range Q P TO-3P(H)IS ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification R:55 110, O:80 160 ) TEST CONDITION VCB=120V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=5V, IC=1A IC=5A, IB=0.5A VCE=5V, IC=5A VCE=5V, IC=1A VCB=10V, IE=0, f=1MHz MIN. 120 55 TYP. 12 170 MAX. 10 10 160 2.5 1.5 V V MHz pF UNIT A A V ICBO IEBO SYMBOL V(BR)CEO hFE (Note) VCE(sat) VBE fT Cob 1996. 2. 9 Revision No : 1 S T 1/2 KTD998 I C - VCE 12 COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE 10 8 6 4 2 0 0 2 4 6 8 400 300 COMMON EMITTER Tc=25 C 200 h FE - IC 1k 500 300 Tc=100 C Tc=25 C Tc=-25 C COMMON EMITTER VCE =5V 100 50 I B =20mA 0 100 50 30 10 12 14 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 1 0.5 0.3 COMMON EMITTER I C /I B =10 SAFE OPERATING AREA 30 I C MAX(PULSED) * COLLECTOR CURRENT I C (A) 10 3 I C MAX(CONTINUOUS) DC 5 O 00 Tc PER mS =2 A 5 TI C ON * t=1mS * 10mS * 100mS * 0.1 0.05 0.03 Tc=1 00 C Tc=25 C Tc=-25 C 1 VCEO MAX. * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WIHT INCREASE IN TEMPERATURE. 0.01 0.01 0.3 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) 0.1 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) Pc - Ta COLLECTOR POWER DISSIPATION P C (W) 100 80 60 40 20 0 2 1 1 2 3 4 Ta=Tc INFINITE HEAT SINK 300x300x2mm Al HEAT SINK 200x200x2mm Al HEAT SINK 100x100x2mm Al HEAT SINK 5 3 4 5 NO HEAT SINK 0 40 80 120 160 200 240 AMBIENT TEMPERATURE Ta ( C) 1996. 2. 9 Revision No : 1 2/2 |
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