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BGC420 Self-Biased BFP420 l l l l l SIEGET(R)25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current (2V - 4.5V) 8 7 6 5 1 2 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BGC420 Marking 42s Ordering Code (8-mm taped) Q62702-G0092 Pin Configuration Package (circuit Diagram) SCT598 see below Equivalent Circuit Vcc Pin Connections, SCT598 Vr,5 4,Vcc 3, Vb 2, GND 1,RFin Vc Active Bias Circuit Vr RFout RFout,6 GND,7 Vc, 8 Vb Q1 Note: Top View RFin GND Description The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin (Vc) for switching the device off is provided. The collector current can be adjusted by connecting a resistor (Rx) between Vcc and Vr. High Frequency Products 1 Edition A13, 05/99 BGC420 Maximum Ratings Parameter Device current Device voltage Total power dissipation, Ts Control voltage Input Current for pin 1 Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction-soldering point 1) Symbol Unit 15 4.5 68 Vcc+0.5 380 150 -65...+150 -65...+150 270 mA V mW V A C C C K/W 110C 1) ICC Vcc Ptot Vc Ir Tj TA Tstg Rth JS 1)TS is measured on the Ground lead at the soldering point to the pcb. Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1 with Rx=82W), Tc=25C, Vcc=3V, ICC7mA unless noted Symbol Parameter Gp NF P-1dB IP3 RLin RLout ton toff Ileak IVcOn IVcOff Vcmin Vcmax 2) 3) Unit 2 Min 17.5 14.5 Typ 19 16 1.3 1.5 1 1 15 15 7 9 4 7 3.7 2.5 <10 35 -60 Vcc - 0.3V 0V+0.3V Max Power Gain (S21 ) Noise Figure (in 50W System) f=900MHz f=1.8GHz f=900MHz f=1.8GHz dB dB dBm dBm dB dB s s A A nA V V 1.5 1.7 Output Power at 1dB Gain Compression f=900MHz (in 50W System) Third Order Intercept Point (Output,GOpt) Input Return Loss Output Return Loss On Switching Time 3) 3) f=1.8GHz f=900MHz f=1.8GHz f=900MHz f=1.8GHz f=900MHz f=1.8GHz Off Switching Time Leakage Current In Sleep Mode Controll Pin (Vc) Current in Active Mode Controll Pin (Vc) Current in Sleep Mode Minimum Voltage at Vc for Sleep Mode Maximum Voltage at Vc for Active Mode 2) 2) A positive sign denotes a current flowing form the Pin into the external circuit. This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout. High Frequency Products 2 Edition A13, 05/99 BGC420 Power Gain versus Frequency Vcc=3V, Icc=5mA 50 45 Power Gain versus Device Current Vcc=3V 30 dB 25 dB 40 35 f=1 GHz 20 Gms Gma Gms 2 25 S21 20 30 Gma Gms IS21I 2 15 2 GHz 3 GHz 15 10 5 0 0.1 Gma 10 4 GHz 5 GHz 5 6 GHz 0 1 10 0 2 4 6 8 10 12 14 16 GHz f Icc mA S212 versus Frequency and Temperature Vcc=3V, Icc=7mA 28 26 dB 24 22 20 = -40C = +27C S21 2 18 16 14 12 10 0.2 = +85C 0.6 1 1.4 1.8 2.2 2.6 3 GHz f High Frequency Products 3 Edition A13, 05/99 BGC420 Device Current versus Device Voltage Device Current versus Rx and Temperature Vcc=3V 14 16 mA mA 14 12 10 R x= 3 3 12 10 R x= 56 Icc 8 6 4 2 0 Icc 8 = -40C R x=82 6 = +27C R x= 1 2 0 4 2 = +85C R x= 68 0 1 2 3 4 V Vcc 0 50 250 450 W 650 Rx Device Current versus Voltage at Vc Vcc=3V; Rx=82W 8 7 mA 6 5 4 3 2 1 0 1 2 3 Icc V VVc High Frequency Products 4 Edition A13, 05/99 BGC420 Typical Application Vcc,4 C4,150pF C5,100nF 3V, DC D1 Rx R2 (500R) Vr,5 C3, 100pF D2 Q2 L1,100nH RFout,6 R1 (47k) R4 (2k7) Q1 R3 10k Vc,8 Vb,3 C2, 1nF RFin,1 GND,7,2 off on Figure 1. Typical Application and Internal Circuit Remarks: 1) 2) 3) 4) To provide low frequency stability C2 should be 10 times C3. Be aware that also coupling capacitors determine the switching times. The collector current at Q1 can be estimated by Ic=0.6V / Rx[W]. Place C2 as close to the device as possible. High Frequency Products 5 Edition A13, 05/99 BGC420 Layout Proposal LQ C7 9F BG 420 C C6 L1 C3 C2 C4 C5 Rx 9 %*& Figure 2. Layout Proposal Part List for Vcc=3V, ICC7mA Component Value L1 C2 C3 C4 C5 C6 C7 Rx Substrate BGC420 This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor matching circuits have to be applied. A good starting point for various applications are the Application Notes provided for the BFP420. 100nH 1nF 100pF 150pF 100nF 220pF 220pF 82W h=0.5mm Comment RFC Compensation Capacitor for Low Frequency Stabilization RFC Blocking Capacitor Blocking Capacitor Coupling Capacitor Coupling Capacitor Current Adjust Fr4,er=4.5 High Frequency Products 6 Edition A13, 05/99 BGC420 SPICE Model The following SPICE Listing describes the circuit shown in figure 3. It is valid for low frequencies. For frequencies above 100MHz the parasitic circuit elements noted in figure 4 and table 1 should be added. Vcc V1 X3 Rx 2 R2 Vr C3 X4 3 X2 L1 RFout R1 R4 Q1 R3 C6 Rout Vc,4 V2 Vb C2 C7 RFin GND vin Rin Figure. 3: Circuit used in the SPICE File * Preliminary SPICE Model for BGC420 (valid for frequencies below 100MHz) * SIEMENS HIGH FREQUENCY PRODUCTS * Small Scale MMIC Design Group .PARAM R=82 ** Analysis setup ** *.TRAN 2ns 15u 0 2n .TEMP +27 .DC LIN V1 0V 4V 0.1V *.DC LIN V2 0V 3V 0.1V .STEP PARAM R LIST 56 82 120 680 * Voltage V1 Vcc V2 Vc *Vpul Vc supply 0 0 0 DC 3.0V DC 0.0V PULSE(0 3V 100ns 0 0 9us 1000m) High Frequency Products 7 Edition A13, 05/99 BGC420 * Internal Resistors R1 3 Vc 47k R2 Vr 2 500 R3 Vb 0 10k R4 Vb rfin 2.7k * External Resistors Rx Vcc Vr {R} Rout vout 0 50 Rin vin 0 50 TC=-0.0006,0.0000025 TC=-0.0006,0.0 TC=-0.0006,0.0000025 TC=-0.0006,0.0 TC=+0.000050,0.0 * External Capacitors C2 C3 C7 C6 Vb 0 Vr 0 rfin vin rfout vout 1nF 100pF 220pF 220pF * Inductors (external) L1 Vr rfout 100nH * Transistors Q1 rfout rfin 0 X2 2 3 Vb 0 X3 Vcc 5 5 0 X4 5330 .PROBE .MODEL BFP420 NPN( + IS = 2.0045e-16 + VAF = 28.383 + NE = 2.0518 + VAR = 19.705 + NC = 1.1724 + RBM = 8.5757 + CJE = 1.8063e-15 + TF = 6.7661e-12 + ITF = 0.001 + VJC = 0.81969 + TR = 2.3249e-09 + MJS = 0 + XTI = 3 * PNP: BFP420 8PL18 2PL18 2PL18 BF = 72.534 IKF = 0.48731 BR = 7.8287 IKR = 0.69141 RB = 3.4849 RE = 0.31111 VJE = 0.8051 XTF = 0.42199 PTF = 0 MJC = 0.30232 CJS= 0 XTB = 0 FC = 0.73234) NF = 1.2432 ISE = 1.9049e-14 NR = 1.3325 ISC = 1.9237e-17 IRB = 0.00072983 RC = 0.10105 MJE = 0.46576 VTF = 0.23794 CJC = 2.3453e-13 XCJC = 0.3 VJS = 0.75 EG = 1.11 PL18 E B C Bulk 3 2 3 3 993 1 94 94 94 94 TL18 8 VSL18 8 LSL18 8 0.204 94 94 94 94 TL18 2 VSL18 2 LSL18 2 0.816 .SUBCKT 8PL18 Q1 993 2 Q2 94 2 Q3 94 2 RCEX 993 1 .ENDS .SUBCKT 2PL18 Q1 993 2 Q2 94 2 Q3 94 2 RCEX 993 1 .ENDS 3 2 3 3 993 1 High Frequency Products 8 Edition A13, 05/99 BGC420 ***** .MODEL +IS +NE +BR +VAF +IKR +RBM +XTB +CJE +TF +ITF +MJC +CJS +PTF ***** .MODEL +IS +NE +BR +VAF +IKR +RBM +XTB +CJE +TF +ITF +MJC +CJS +PTF ***** .MODEL +IS +NE +BR +VAF +IKR +RBM +XTB +CJE +TF +ITF +MJC +CJS +PTF ***** .END TL18 = 2.914E-17 = 1.553E+00 = 2.869E+01 = 6.000E+01 = 2.474E-05 = 4.000E+01 =-6.000E-01 = 1.200E-14 = 7.600E-10 = 1.400E-02 = 3.760E-01 = 0.000E+00 = 0.000E+00 VSL18 1.630E-19 1.500E+00 1.000E+09 1.000E+02 1.000E+00 0.000E+00 0.000E+00 0.000E+00 2.000E-09 1.000E+06 3.770E-01 0.000E+00 0.000E+00 LSL18 4.261E-17 1.500E+00 1.000E+09 6.000E+01 1.000E+00 0.000E+00 0.000E+00 0.000E+00 1.000E-09 1.000E+06 3.000E-01 0.000E+00 0.000E+00 PNP NF ISE NC IKF RB RE EG VJE XTF CJC XCJC VJS FC PNP NF ISE NC IKF RB RE EG VJE XTF CJC XCJC VJS FC PNP NF ISE NC IKF RB RE EG VJE XTF CJC XCJC VJS FC = = = = = = = = = = = = = 1.000E+00 6.923E-16 1.500E+00 1.676E-04 6.000E+01 2.597E+00 1.156E+00 4.900E-01 2.872E-01 4.700E-13 1.000E+00 7.500E-01 5.000E-01 BF NR ISC VAR IRB RC XTI MJE VTF VJC TR MJS = = = = = = = = = = = = 4.005E+02 1.000E+00 8.190E-15 2.214E+00 0.000E+00 4.000E+00 3.000E+00 1.360E-01 1.000E+03 7.610E-01 0.000E+00 0.000E+00 = = = = = = = = = = = = = = = = = = = = = = = = = = 1.000E+00 0.000E+00 2.000E+00 1.794E-04 0.000E+00 0.000E+00 1.122E+00 6.800E-01 0.000E+00 1.950E-13 0.000E+00 7.500E-01 5.000E-01 BF NR ISC VAR IRB RC XTI MJE VTF VJC TR MJS = = = = = = = = = = = = 1.000E+09 1.000E+00 0.000E+00 1.700E+00 0.000E+00 0.000E+00 3.000E+00 3.400E-01 1.000E+03 5.500E-01 0.000E+00 0.000E+00 = = = = = = = = = = = = = = = = = = = = = = = = = = 1.000E+00 0.000E+00 2.000E+00 9.648E-05 0.000E+00 0.000E+00 1.158E+00 6.800E-01 0.000E+00 0.000E+00 0.000E+00 7.500E-01 5.000E-01 BF NR ISC VAR IRB RC XTI MJE VTF VJC TR MJS = = = = = = = = = = = = 1.000E+09 1.000E+00 0.000E+00 1.700E+00 0.000E+00 0.000E+00 3.000E+00 3.400E-01 1.000E+03 4.600E-01 0.000E+00 0.000E+00 High Frequency Products 9 Edition A13, 05/99 BGC420 Vcc V1 X3 Rx 2 R2 Vr C3 X4 3 X2 L1 RFout R1 Lp1 Lp7 R4 Lp2 Q1 R3 Lp6 Cp1 Cp3 Lp3 Cp2 Lp5 Lp4 Vc V2 Vb RFin GND C2 Figure 4. Parasitic circuit elements for frequencies above 100MHz Element Lp1 Lp2 Lp3 Lp4 Lp5 Lp6 Lp7 Cp1 Cp2 Cp3 Value 0.58nH 0.56nH 0.23nH 0.05nH 0.53nH 0.47nH 1nH 134fF 136fF 6.9fF Table 1. Parasitic circuit elements for frequencies above 100MHz High Frequency Products 10 Edition A13, 05/99 BGC420 Package Published by Infineon Technologies AG i Gr., Bereichs Kommunikation St.-Martin-Strasse 76, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. . High Frequency Products 11 Edition A13, 05/99 |
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