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| (R) SMP80MC TRISILTM FOR TELECOM EQUIPMENT PROTECTION FEATURES Bidirectional crowbar protection Voltage: range from 120V to 270V Low VBO / VR ratio Micro capacitance equal to 12pF @ 50V Low leakage current : IR = 2A max Holding current: IH = 150 mA min Repetitive peak pulse current : IPP = 80 A (10/1000s) MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes and power crossing: SMB (JEDEC DO-214AA) Table 1: Order Codes Part Number SMP80MC-120 SMP80MC-140 SMP80MC-160 SMP80MC-200 SMP80MC-230 SMP80MC-270 Marking TP12 TP14 TP16 TP20 TP23 TP27 Terminals (phone, fax, modem...) and central office equipment DESCRIPTION The SMP80MC is a series of micro capacitance transient surge arrestors designed for the protection of high debit rate communication equipment on CPE side. Its micro capacitance avoids any distortion of the signal and is compatible with digital transmission like ADSL2 and ADSL2+. BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet main standards such as UL1950, IEC950 / CSA C22.2 and UL1459. They have UL94 V0 approved resin. SMB package is JEDEC registered (DO-214AA). Trisils comply with the following standards GR1089 Core, ITU-T-K20/K21, VDE0433, VDE0878, IEC61000-4-5 and FCC part 68. Figure 1: Schematic Diagram TM: TRISIL is a trademark of STMicroelectronics. June 2005 REV. 3 1/9 SMP80MC Table 2: In compliances with the following standards STANDARD GR-1089 Core First level GR-1089 Core Second level GR-1089 Core Intra-building ITU-T-K20/K21 ITU-T-K20 (IEC61000-4-2) VDE0433 VDE0878 IEC61000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B Peak Surge Voltage (V) 2500 1000 5000 1500 6000 1500 8000 15000 4000 2000 4000 2000 4000 4000 1500 800 1000 Waveform Voltage 2/10 s 10/1000 s 2/10 s 2/10 s 10/700 s 1/60 ns 10/700 s 1.2/50 s 10/700 s 1.2/50 s 10/160 s 10/560 s 9/720 s Required peak current (A) 500 100 500 100 150 37.5 Current waveform 2/10 s 10/1000 s 2/10 s 2/10 s 5/310 s Minimum serial resistor to meet standard () 5 2.5 10 0 10 0 0 0 0 0 0 0 0 0 2.5 0 0 ESD contact discharge ESD air discharge 100 50 100 50 100 100 200 100 25 5/310 s 1/20 s 5/310 s 8/20 s 10/160 s 10/560 s 5/320 s Table 3: Absolute Ratings (Tamb = 25C) Symbol IPP Parameter Repetitive peak pulse current (see figure 2) 10/1000 s 8/20 s 10/560 s 5/310 s 10/160 s 1/20 s 2/10 s 8/20 s t = 0.2 s t=1s t=2s t = 15 mn t = 16.6 ms t = 20 ms Value 80 200 100 120 150 200 250 5 14 8 6.5 2 7.5 7.8 -55 to 150 150 260 Unit A IFS ITSM Fail-safe mode : maximum current (note 1) Non repetitive surge peak on-state current (sinusoidal) kA A A2s C C I2t Tstg Tj TL I2t value for fusing Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s. Note 1: in fail safe mode, the device acts as a short circuit 2/9 SMP80MC Table 4: Thermal Resistances Symbol Rth(j-a) Rth(j-l) Junction to leads Parameter Junction to ambient (with recommended footprint) Value 100 20 Unit C/W C/W Table 5: Electrical Characteristics (Tamb = 25C) Symbol VRM VBR VBO IRM IPP IBO IH VR IR C Parameter Stand-off voltage Breakdown voltage Breakover voltage Leakage current Peak pulse current Breakover current Holding current Continuous reverse voltage Leakage current at VR Capacitance IRM @ VRM Types A SMP80MC-120 SMP80MC-140 SMP80MC-160 SMP80MC-200 SMP80MC-230 SMP80MC-270 Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: IR @ VR max. note1 Dynamic VBO max. note 2 Static VBO @ IBO max. max. IH min. C typ. C typ. max. V 108 126 2 144 180 207 243 note 3 V 155 180 205 255 295 345 800 mA note 4 note 5 note 6 mA pF pF A V 120 140 V 155 180 205 255 295 345 5 160 200 230 270 150 12 25 IR measured at VR guarantee VBR min VR see functional test circuit 1 see test circuit 2 see functional holding current test circuit 3 VR = 50V bias, VRMS=1V, F=1MHz VR = 2V bias, VRMS=1V, F=1MHz 3/9 SMP80MC Figure 2: Pulse waveform Figure 3: Non repetitive surge peak on-state current versus overload duration Repetitive peak pulse current tr = rise time (s) tp = pulse duration time (s) 40 35 30 25 F=50Hz Tj initial = 25C % I PP 100 ITSM(A) 50 20 15 10 0 tr tp t 5 t(s) 0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 4: On-state voltage versus on-state current (typical values) IT(A) 100 Tj=25C Figure 5: Relative variation of holding current versus junction temperature IH[Tj] / IH[Tj=25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 VT(V) 10 0 1 2 3 4 5 6 7 8 0.2 0.0 -40 -30 -20 -10 0 10 20 30 Tj(C) 40 50 60 70 80 90 100 110 120 130 Figure 6: Relative variation of breakover voltage versus junction temperature VBO[Tj] / VBO[Tj=25C] 1.08 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Figure 7: Relative variation of leakage current versus junction temperature (typical values) IR[Tj] / IR[Tj=25C] 1.E+03 VR=243V 1.E+02 1.E+01 Tj(C) 1.E+00 25 50 Tj(C) 75 100 125 4/9 SMP80MC Figure 8: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35m, recommended pad layout) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 9: Relative variation of junction capacitance versus reverse voltage applied (typical values) C [VR] / C [VR=2V] 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 F =1MHz VOSC = 1VRMS Tj = 25C tp(s) 0.1 0.0 1 10 VR(V) 100 1000 Figure 10: Test circuit 1 for dynamic IBO and VBO parameters 100 V / s, di /dt < 10 A / s, Ipp = 80 A 2 45 66 470 83 0.36 nF 46 H U 10 F KeyTek 'System 2' generator with PN246I module 1 kV / s, di /dt < 10 A / s, Ipp = 10 A 26 H 250 12 47 46 H U 60 F KeyTek 'System 2' generator with PN246I module 5/9 SMP80MC Figure 11: Test circuit 2 for IBO and VBO parameters K ton = 20ms R1 = 140 R2 = 240 220V 50Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE Pulse test duration (tp = 20ms): for Bidirectional devices = Switch K is closed for Unidirectional devices = Switch K is open VOUT selection: Device with VBO < 200V VOUT = 250 VRMS, R1 = 140 Device with VBO 200V VOUT = 480 VRMS, R2 = 240 Figure 12: Test circuit 3 for dynamic IH parameter R Surge generator VBAT = - 48 V D.U.T This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current IPP = 10A, 10/1000s. 3/ The D.U.T. will come back off-state within 50ms maximum. 6/9 SMP80MC Figure 13: Ordering Information Scheme SMP Trisil Surface Mount Repetitive Peak Pulse Current 80 = 80A Capacitance MC = Micro Capacitance Voltage 270 = 270V Figure 14: SMB Package Mechanical Data 80 MC - xxx DIMENSIONS E1 REF. D Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 A1 A2 b E c E A1 E1 C L A2 D b L Figure 15: Foot Print Dimensions (in millimeters) 2.3 1.52 2.75 1.52 7/9 SMP80MC Table 6: Ordering Information Part Number SMP80MC-120 SMP80MC-140 SMP80MC-160 SMP80MC-200 SMP80MC-230 SMP80MC-270 Marking TP12 TP14 TP16 TP20 TP23 TP27 SMB 0.11 g 2500 Tape & reel Package Weight Base qty Delivery mode Table 7: Revision History Date September-2001 11-May-2005 20-Jun-2005 Revision 1 2 3 First issue. New types introduction. Qualification of new types Description of Changes 8/9 SMP80MC Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of compagnies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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